| Linear dichroism conversion in quasi‐1D perovskite chalcogenide J Wu, X Cong, S Niu, F Liu, H Zhao, Z Du, J Ravichandran, PH Tan, ... Advanced Materials 31 (33), 1902118, 2019 | 66 | 2019 |
| Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN M Xiao, Z Du, J Xie, E Beam, X Yan, K Cheng, H Wang, Y Cao, Y Zhang Applied Physics Letters 116 (5), 2020 | 56 | 2020 |
| Artificial neuronal devices based on emerging materials: neuronal dynamics and applications H Liu, Y Qin, HY Chen, J Wu, J Ma, Z Du, N Wang, J Zou, S Lin, X Zhang, ... Advanced Materials 35 (37), 2205047, 2023 | 51 | 2023 |
| 10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C Y Qin, M Xiao, M Porter, Y Ma, J Spencer, Z Du, AG Jacobs, K Sasaki, ... IEEE Electron Device Letters 44 (8), 1268-1271, 2023 | 50 | 2023 |
| Multi-Channel Monolithic-Cascode HEMT (MC2-HEMT): A New GaN Power Switch up to 10 kV M Xiao, Y Ma, Z Du, V Pathirana, K Cheng, A Xie, E Beam, Y Cao, ... 2021 IEEE International Electron Devices Meeting (IEDM), 5.5. 1-5.5. 4, 2021 | 48 | 2021 |
| Tri-gate GaN junction HEMT Y Ma, M Xiao, Z Du, X Yan, K Cheng, M Clavel, MK Hudait, I Kravchenko, ... Applied Physics Letters 117 (14), 2020 | 39 | 2020 |
| 5 kV multi-channel AlGaN/GaN power Schottky barrier diodes with junction-fin-anode M Xiao, Y Ma, Z Du, X Yan, R Zhang, K Cheng, K Liu, A Xie, E Beam, ... 2020 IEEE International Electron Devices Meeting (IEDM), 5.4. 1-5.4. 4, 2020 | 35 | 2020 |
| Polymer solar cells: ternary polymer solar cells facilitating improved efficiency and stability (Adv. Mater. 52/2019) J Wu, X Cong, S Niu, F Liu, H Zhao, Z Du, J Ravichandran, PH Tan, ... Adv. Mater. 31, 1-8, 2019 | 31 | 2019 |
| First demonstration of vertical superjunction diode in GaN M Xiao, Y Ma, Z Du, Y Qin, K Liu, K Cheng, F Udrea, A Xie, E Beam, ... 2022 International Electron Devices Meeting (IEDM), 35.6. 1-35.6. 4, 2022 | 26 | 2022 |
| Spin–phonon coupling in ferromagnetic monolayer chromium tribromide J Wu, Y Yao, ML Lin, M Rösner, Z Du, K Watanabe, T Taniguchi, PH Tan, ... Advanced Materials 34 (20), 2108506, 2022 | 26 | 2022 |
| A tantalum disulfide charge-density-wave stochastic artificial neuron for emulating neural statistical properties H Liu, T Wu, X Yan, J Wu, N Wang, Z Du, H Yang, B Chen, Z Zhang, F Liu, ... Nano Letters 21 (8), 3465-3472, 2021 | 19 | 2021 |
| Tri-gate GaN junction HEMTs: physics and performance space Y Ma, M Xiao, Z Du, H Wang, Y Zhang IEEE Transactions on Electron Devices 68 (10), 4854-4861, 2021 | 18 | 2021 |
| Wide‐bandgap nickel oxide with tunable acceptor concentration for multidimensional power devices Y Ma, Y Qin, M Porter, J Spencer, Z Du, M Xiao, B Wang, Y Wang, ... Advanced Electronic Materials 11 (1), 2300662, 2025 | 15 | 2025 |
| 2 kV, 0.7 mΩ•cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness Y Qin, M Porter, M Xiao, Z Du, H Zhang, Y Ma, J Spencer, B Wang, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 15 | 2023 |
| 1 kV self-aligned vertical GaN superjunction diode Y Ma, M Porter, Y Qin, J Spencer, Z Du, M Xiao, Y Wang, I Kravchenko, ... IEEE Electron Device Letters 45 (1), 12-15, 2023 | 14 | 2023 |
| Activating thick buried p-GaN for device applications Y Ma, M Xiao, Z Du, L Wang, E Carlson, L Guido, H Wang, L Wang, Y Luo, ... IEEE Transactions on Electron Devices 69 (8), 4224-4230, 2022 | 10 | 2022 |
| Kilovolt tri-gate GaN junction HEMTs with high thermal stability Y Ma, M Xiao, Y Zhang, Z Du, X Yan, H Wang, K Cheng, M Clavel, ... 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 10 | 2021 |
| NiO Junction Termination Extension for Ga2O3 Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed M Xiao, B Wang, R Zhang, Q Song, J Spencer, Z Du, Y Qin, K Sasaki, ... 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 4 | 2023 |
| Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN Z Yang, Y Ma, M Porter, H Gong, Z Du, H Wang, Y Luo, L Wang, Y Zhang IEEE Transactions on Electron Devices, 2024 | 2 | 2024 |
| Multi-Channel AlGaN/GaN Power Rectifiers: Breakthrough Performance up to 10 kV Y Zhang, M Xiao, Y Ma, Z Du, H Wang, A Xie, E Beam, Y Cao, K Cheng ECS Transactions 104 (4), 51, 2021 | 2 | 2021 |