| Reconstructions of the GaN (000 1) surface AR Smith, RM Feenstra, DW Greve, J Neugebauer, JE Northrup Physical review letters 79 (20), 3934, 1997 | 447 | 1997 |
| Structure of GaN (0001): The laterally contracted Ga bilayer model JE Northrup, J Neugebauer, RM Feenstra, AR Smith Physical Review B 61 (15), 9932, 2000 | 438 | 2000 |
| Determination of wurtzite GaN lattice polarity based on surface reconstruction AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ... Applied physics letters 72 (17), 2114-2116, 1998 | 413 | 1998 |
| Formation of atomically flat silver films on GaAs with a" silver mean" quasi periodicity AR Smith, KJ Chao, Q Niu, CK Shih Science 273 (5272), 226-228, 1996 | 342 | 1996 |
| Reconstructions of GaN (0001) and (0001) surfaces: Ga-rich metallic structures AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ... JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B MICROELECTRONICS AND NANOMETER …, 1998 | 325 | 1998 |
| Preparation of atomically flat surfaces on silicon carbide using hydrogen etching V Ramachandran, MF Brady, AR Smith, RM Feenstra, DW Greve Journal of Electronic Materials 27 (4), 308-312, 1998 | 282 | 1998 |
| GaN (0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ... Surface science 423 (1), 70-84, 1999 | 173 | 1999 |
| Surface and bulk electronic structure of investigated by scanning tunneling microscopy/spectroscopy and optical absorption spectroscopy HA Al-Brithen, AR Smith, D Gall Physical Review B—Condensed Matter and Materials Physics 70 (4), 045303, 2004 | 155 | 2004 |
| Molecular beam epitaxy control of the structural, optical, and electronic properties of ScN (001) AR Smith, HAH Al-Brithen, DC Ingram, D Gall Journal of Applied Physics 90 (4), 1809-1816, 2001 | 142 | 2001 |
| Metal/semiconductor phase transition in chromium nitride (001) grown by rf-plasma-assisted molecular-beam epitaxy C Constantin, MB Haider, D Ingram, AR Smith Applied Physics Letters 85 (26), 6371-6373, 2004 | 136 | 2004 |
| Crystalline phase and orientation control of manganese nitride grown on MgO (001) by molecular beam epitaxy H Yang, H Al-Brithen, E Trifan, DC Ingram, AR Smith Journal of applied physics 91 (3), 1053-1059, 2002 | 131 | 2002 |
| alloy growth by molecular beam epitaxy: Evidence for a metastable layered hexagonal phase C Constantin, H Al-Brithen, MB Haider, D Ingram, AR Smith Physical Review B—Condensed Matter and Materials Physics 70 (19), 193309, 2004 | 104 | 2004 |
| Structural and magnetic properties of η-phase manganese nitride films grown by molecular-beam epitaxy H Yang, H Al-Brithen, AR Smith, JA Borchers, RL Cappelletti, MD Vaudin Applied Physics Letters 78 (24), 3860-3862, 2001 | 102 | 2001 |
| Atomic-Scale Spin-Polarized Scanning Tunneling Microscopy Applied to H Yang, AR Smith, M Prikhodko, WRL Lambrecht Physical review letters 89 (22), 226101, 2002 | 100 | 2002 |
| Molecular beam epitaxial growth of atomically smooth scandium nitride films H Al-Brithen, AR Smith Applied Physics Letters 77 (16), 2485-2487, 2000 | 100 | 2000 |
| Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction AR Smith, V Ramachandran, RM Feenstra, DW Greve, MS Shin, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (3 …, 1998 | 83 | 1998 |
| Reconstruction Control of Magnetic Properties during Epitaxial Growth <?format ?>of Ferromagnetic on Wurtzite GaN(0001) E Lu, DC Ingram, AR Smith, JW Knepper, FY Yang Physical review letters 97 (14), 146101, 2006 | 80 | 2006 |
| Surface reconstruction during molecular beam epitaxial growth of GaN (0001) AR Smith, V Ramachandran, RM Feenstra, DW Greve, A Ptak, T Myers, ... Materials Research Society Internet Journal of Nitride Semiconductor …, 1998 | 77 | 1998 |
| A new high‐resolution two‐dimensional micropositioning device for scanning probe microscopy applications AR Smith, S Gwo, CK Shih Review of scientific instruments 65 (10), 3216-3219, 1994 | 72 | 1994 |
| Direct determination of exact charge states of surface point defects using scanning tunneling microscopy: As vacancies on GaAs (110) KJ Chao, AR Smith, CK Shih Physical Review B 53 (11), 6935, 1996 | 70 | 1996 |
