| Transferred van der Waals metal electrodes for sub-1-nm MoS2 vertical transistors L Liu, L Kong, Q Li, C He, L Ren, Q Tao, X Yang, J Lin, B Zhao, Z Li, ... Nature Electronics 4 (5), 342-347, 2021 | 217 | 2021 |
| Addressing the impact of rear surface passivation mechanisms on ultra-thin Cu (In, Ga) Se2 solar cell performances using SCAPS 1-D model R Kotipalli, O Poncelet, G Li, Y Zeng, LA Francis, B Vermang, D Flandre Solar Energy 157, 603-613, 2017 | 66 | 2017 |
| Defect Self‐Compensation for High‐Mobility Bilayer InGaZnO/In2O3 Thin‐Film Transistor J He, G Li, Y Lv, C Wang, C Liu, J Li, D Flandre, H Chen, T Guo, L Liao Advanced Electronic Materials 5 (6), 1900125, 2019 | 60 | 2019 |
| Substantially improving device performance of all‐inorganic perovskite‐based phototransistors via indium tin oxide nanowire incorporation Y Hou, L Wang, X Zou, D Wan, C Liu, G Li, X Liu, Y Liu, C Jiang, JC Ho, ... Small 16 (5), 1905609, 2020 | 48 | 2020 |
| Gate-tunable the interface properties of GaAs–WSe2 (1D–2D) vdWs heterojunction for high-responsivity, self-powered photodetector X Chen, B Jiang, D Wang, G Li, H Wang, H Wang, F Wang, P Wang, ... Applied Physics Letters 118 (4), 2021 | 44 | 2021 |
| Understanding hydrogen and nitrogen doping on active defects in amorphous In-Ga-Zn-O thin film transistors G Li, A Abliz, L Xu, N André, X Liu, Y Zeng, D Flandre, L Liao Applied Physics Letters 112 (25), 2018 | 38 | 2018 |
| Design of Highly Stable Tungsten-Doped IZO Thin-Film Transistors with Enhanced Performance LL Da Wan, Xingqiang Liu, Ablat Abliz, Chuansheng Liu, Yanbing Yang , Wei Wu ... IEEE Transactions on Electron Devices 65 (3), 1018-1022, 2018 | 37 | 2018 |
| Rational design of hydrogen and nitrogen co-doped ZnO for high performance thin-film transistors A Abliz, X Xue, X Liu, G Li, L Tang Applied Physics Letters 118 (12), 2021 | 32 | 2021 |
| Impact of hydrogen dopant incorporation on InGaZnO, ZnO and In 2 O 3 thin film transistors H Wang, J He, Y Xu, N André, Y Zeng, D Flandre, L Liao, G Li Physical Chemistry Chemical Physics 22 (3), 1591-1597, 2020 | 24 | 2020 |
| Ultra‐Steep‐Slope High‐Gain MoS2 Transistors with Atomic Threshold‐Switching Gate J Lin, X Chen, X Duan, Z Yu, W Niu, M Zhang, C Liu, G Li, Y Liu, X Liu, ... Advanced Science 9 (8), 2104439, 2022 | 21 | 2022 |
| Schottky-Contacted WSe2 Hot-Electron Photodetectors with Fast Response and High Sensitivity M Zhang, X Liu, X Duan, S Zhang, C Liu, D Wan, G Li, Z Xia, Z Fan, L Liao Acs Photonics 9 (1), 132-137, 2021 | 19 | 2021 |
| Ultimate Limit in Optoelectronic Performances of Monolayer WSe2 Sloping-Channel Transistors Z Xie, G Li, S Xia, C Liu, S Zhang, Z Zeng, X Liu, D Flandre, Z Fan, L Liao, ... Nano letters 23 (14), 6664-6672, 2023 | 17 | 2023 |
| Enhanced stability and mobility of solution-processed oxide thin-film transistors with bilayer terbium-incorporated indium oxide channel P He, C Ding, X Zou, G Li, W Hu, C Ma, D Flandre, B Iñíguez, L Liao, ... Applied Physics Letters 121 (19), 2022 | 17 | 2022 |
| Effect of humidity on properties of aqueous-processed Tb-doped indium oxide thin-film transistors P He, R Hong, G Li, X Zou, W Hu, L Lan, B Iñíguez, L Liao, X Liu IEEE Electron Device Letters 43 (11), 1894-1897, 2022 | 17 | 2022 |
| High Voltage Gain WSe2 Complementary Compact Inverter With Buried Gate for Local Doping D Wan, B Jiang, H Huang, C Chen, A Abliz, C Ye, X Liu, X Zou, G Li, ... IEEE Electron Device Letters 41 (6), 944-947, 2020 | 16 | 2020 |
| Silicon-on-insulator photodiode on micro-hotplate platform with improved responsivity and high-temperature application G Li, N André, O Poncelet, P Gérard, SZ Ali, F Udrea, LA Francis, Y Zeng, ... IEEE Sensors Journal 16 (9), 3017-3024, 2016 | 16 | 2016 |
| High-current MoS2 transistors with non-planar gate configuration J Lin, B Wang, Z Yang, G Li, X Zou, Y Chai, X Liu, L Liao Science Bulletin 66 (8), 777-782, 2021 | 15 | 2021 |
| Analysis and simulation for current–voltage models of thin-film gated SOI lateral PIN photodetectors G Li, Y Zeng, W Hu, Y Xia Optik 125 (1), 540-544, 2014 | 15 | 2014 |
| Enhanced ultraviolet photoresponse in a graphene-gated ultra-thin Si-based photodiode G Li, N André, B Huet, T Delhaye, N Reckinger, LA Francis, L Liao, ... Journal of Physics D: Applied Physics 52 (24), 245101, 2019 | 14 | 2019 |
| Low-Frequency Noise in High-Mobility a-InGaZnO/InSnO Nanowire Composite Thin-Film Transistors LL Da Wan, Ablat Abliz, Meng Su, Chuangsheng Liu, Changzhong Jiang, Guoli Li ... IEEE Electron Device Letters 38 (11), 1540-1542, 2017 | 14 | 2017 |
Denis FlandreICTEAM, EPL, Université catholique de Louvain (UCL)כתובת אימייל מאומתת בדומיין uclouvain.be
