| MXene nanoribbons as electrocatalysts for the hydrogen evolution reaction with fast kinetics X Yang, N Gao, S Zhou, J Zhao Physical Chemistry Chemical Physics 20 (29), 19390-19397, 2018 | 104 | 2018 |
| Cooperative electron–phonon coupling and buckled structure in germanene on Au (111) J Zhuang, N Gao, Z Li, X Xu, J Wang, J Zhao, SX Dou, Y Du ACS nano 11 (4), 3553-3559, 2017 | 94 | 2017 |
| Structures and Magnetic Properties of MoS2 Grain Boundaries with Antisite Defects N Gao, Y Guo, S Zhou, Y Bai, J Zhao The Journal of Physical Chemistry C 121 (22), 12261-12269, 2017 | 85 | 2017 |
| Structure and stability of bilayer borophene: The roles of hexagonal holes and interlayer bonding N Gao, X Wu, X Jiang, Y Bai, J Zhao FlatChem 7, 48-54, 2018 | 84 | 2018 |
| Direct synthesis and in situ characterization of monolayer parallelogrammic rhenium diselenide on gold foil S Jiang, M Hong, W Wei, L Zhao, N Zhang, Z Zhang, P Yang, N Gao, ... Communications Chemistry 1 (1), 17, 2018 | 77 | 2018 |
| Initial growth mechanism of blue phosphorene on Au (111) surface N Han, N Gao, J Zhao The Journal of Physical Chemistry C 121 (33), 17893-17899, 2017 | 58 | 2017 |
| Boron clusters with 46, 48, and 50 atoms: competition among the core–shell, bilayer and quasi-planar structures L Sai, X Wu, N Gao, J Zhao, RB King Nanoscale 9 (37), 13905-13909, 2017 | 54 | 2017 |
| Selecting electrode materials for monolayer ReS 2 with an Ohmic contact N Gao, S Zhou, N Liu, Y Bai, J Zhao Journal of Materials Chemistry C 6 (25), 6764-6770, 2018 | 39 | 2018 |
| Identifying the non-identical outermost selenium atoms and invariable band gaps across the grain boundary of anisotropic rhenium diselenide M Hong, X Zhou, N Gao, S Jiang, C Xie, L Zhao, Y Gao, Z Zhang, P Yang, ... ACS nano 12 (10), 10095-10103, 2018 | 35 | 2018 |
| Realization of strained stanene by interface engineering Y Liu, N Gao, J Zhuang, C Liu, J Wang, W Hao, SX Dou, J Zhao, Y Du The Journal of Physical Chemistry Letters 10 (7), 1558-1565, 2019 | 33 | 2019 |
| Tuning Schottky barriers for monolayer GaSe FETs by exploiting a weak Fermi level pinning effect N Liu, S Zhou, N Gao, J Zhao Physical Chemistry Chemical Physics 20 (33), 21732-21738, 2018 | 24 | 2018 |
| Interaction between post-graphene group-iv honeycomb monolayers and metal substrates: Implication for synthesis and structure control N Gao, H Liu, S Zhou, Y Bai, J Zhao The Journal of Physical Chemistry C 121 (9), 5123-5129, 2017 | 24 | 2017 |
| Monolayered semiconducting GeAsSe and SnSbTe with ultrahigh hole mobility Y Guo, N Gao, Y Bai, J Zhao, XC Zeng Frontiers of Physics 13, 1-9, 2018 | 13 | 2018 |
Yi DuBeihang University, BUAA-UOW Joint Centre, Surface Physics and Quantum Matters Groupכתובת אימייל מאומתת בדומיין buaa.edu.cn