Dielectric breakdown mechanisms in gate oxides S Lombardo, JH Stathis, BP Linder, KL Pey, F Palumbo, CH Tung
Journal of applied physics 98 (12), 2005
560 2005 A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k , and Layered Dielectrics F Palumbo, C Wen, S Lombardo, S Pazos, F Aguirre, M Eizenberg, F Hui, ...
Advanced Functional Materials 30 (18), 1900657, 2020
226 2020 Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ...
ACS nano 15 (11), 17214-17231, 2021
197 2021 Percolation path and dielectric-breakdown-induced-epitaxy evolution during ultrathin gate dielectric breakdown transient CH Tung, KL Pey, LJ Tang, MK Radhakrishnan, WH Lin, F Palumbo, ...
Applied Physics Letters 83 (11), 2223-2225, 2003
114 2003 On the thermal models for resistive random access memory circuit simulation JB Roldán, G González-Cordero, R Picos, E Miranda, F Palumbo, ...
Nanomaterials 11 (5), 1261, 2021
68 2021 Dielectric breakdown in chemical vapor deposited hexagonal boron nitride L Jiang, Y Shi, F Hui, K Tang, Q Wu, C Pan, X Jing, H Uppal, F Palumbo, ...
ACS Applied Materials & Interfaces 9 (45), 39758-39770, 2017
58 2017 Continuous High-Altitude Measurements of Cosmic Ray Neutrons and SEU/MCU at Various Locations: Correlation and Analyses Based-On MUSCA SEP G Hubert, R Velazco, C Federico, A Cheminet, C Silva-Cardenas, ...
IEEE Transactions on Nuclear Science 60 (4), 2418-2426, 2013
49 2013 150 nm× 200 nm cross‐point hexagonal boron nitride‐based memristors B Yuan, X Liang, L Zhong, Y Shi, F Palumbo, S Chen, F Hui, X Jing, ...
Advanced Electronic Materials 6 (12), 1900115, 2020
44 2020 A novel approach to characterization of progressive breakdown in high-k/metal gate stacks R Pagano, S Lombardo, F Palumbo, P Kirsch, SA Krishnan, C Young, ...
Microelectronics Reliability 48 (11-12), 1759-1764, 2008
42 2008 Physical mechanism of progressive breakdown in gate oxides F Palumbo, S Lombardo, M Eizenberg
Journal of Applied Physics 115 (22), 2014
40 2014 Temperature of conductive nanofilaments in hexagonal boron nitride based memristors showing threshold resistive switching M Lanza, F Palumbo, Y Shi, F Aguirre, S Boyeras, B Yuan, E Yalon, ...
Advanced Electronic Materials 8 (8), 2100580, 2022
33 2022 Application of the quasi-static memdiode model in cross-point arrays for large dataset pattern recognition FL Aguirre, SM Pazos, F Palumbo, J Suñé, E Miranda
IEEE Access 8, 202174-202193, 2020
29 2020 Radiation hardness of silicon photomultipliers under 60Co γ-ray irradiation R Pagano, S Lombardo, F Palumbo, D Sanfilippo, G Valvo, G Fallica, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2014
28 2014 Hf-based high-k dielectrics for p-Ge MOS gate stacks S Fadida, F Palumbo, L Nyns, D Lin, S Van Elshocht, M Caymax, ...
Journal of Vacuum Science & Technology B 32 (3), 2014
26 2014 Degradation characteristics of metal/Al2O3/n-InGaAs capacitors F Palumbo, M Eizenberg
Journal of Applied Physics 115 (1), 2014
25 2014 Analytic expression for the Fowler–Nordheim V–I characteristic including the series resistance effect E Miranda, F Palumbo
Solid-state electronics 61 (1), 93-95, 2011
22 2011 Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller S Pazos, W Zheng, T Zanotti, F Aguirre, T Becker, Y Shen, K Zhu, Y Yuan, ...
Nanoscale 15 (5), 2171-2180, 2023
21 2023 Formation and Characterization of Filamentary Current Paths in F Palumbo, E Miranda, G Ghibaudo, V Jousseaume
IEEE electron device letters 33 (7), 1057-1059, 2012
21 2012 Bimodal dielectric breakdown in electronic devices using chemical vapor deposited hexagonal boron nitride as dielectric F Palumbo, X Liang, B Yuan, Y Shi, F Hui, MA Villena, M Lanza
Advanced Electronic Materials 4 (3), 1700506, 2018
19 2018 Structure and conductance of the breakdown spot during the early stages of progressive breakdown G Condorelli, SA Lombardo, F Palumbo, KL Pey, CH Tung, LJ Tang
IEEE Transactions on Device and Materials Reliability 6 (4), 534-541, 2006
19 2006 
Salvatore LombardoCNR-IMMכתובת אימייל מאומתת בדומיין imm.cnr.it