| Water‐Lubricated Intercalation in V2O5·nH2O for High‐Capacity and High‐Rate Aqueous Rechargeable Zinc Batteries M Yan, P He, Y Chen, S Wang, Q Wei, K Zhao, X Xu, Q An, Y Shuang, ... Advanced materials 30 (1), 1703725, 2018 | 1356 | 2018 |
| Reversible displacive transformation in MnTe polymorphic semiconductor S Mori, S Hatayama, Y Shuang, D Ando, Y Sutou Nature Communications 11 (1), 85, 2020 | 57 | 2020 |
| MoS2/MnO2 heterostructured nanodevices for electrochemical energy storage X Liao, Y Zhao, J Wang, W Yang, L Xu, X Tian, Y Shuang, KA Owusu, ... Nano Research 11, 2083-2092, 2018 | 57 | 2018 |
| Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices M Krbal, V Prokop, AA Kononov, JR Pereira, J Mistrik, AV Kolobov, ... ACS Applied Nano Materials 4 (9), 8834-8844, 2021 | 41 | 2021 |
| Cr-Triggered Local Structural Change in Cr2Ge2Te6 Phase Change Material S Hatayama, Y Shuang, P Fons, Y Saito, AV Kolobov, K Kobayashi, ... ACS applied materials & interfaces 11 (46), 43320-43329, 2019 | 34 | 2019 |
| Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change Y Shuang, Y Sutou, S Hatayama, S Shindo, YH Song, D Ando, J Koike Applied Physics Letters 112 (18), 2018 | 30 | 2018 |
| Phase control of sputter-grown large-area MoTe2 films by preferential sublimation of Te: amorphous, 1T′ and 2H phases S Hatayama, Y Saito, K Makino, N Uchida, Y Shuang, S Mori, Y Sutou, ... Journal of Materials Chemistry C 10 (29), 10627-10635, 2022 | 19 | 2022 |
| Bidirectional selector utilizing hybrid diodes for PCRAM applications Y Shuang, S Hatayama, J An, J Hong, D Ando, Y Song, Y Sutou Scientific Reports 9 (1), 20209, 2019 | 19 | 2019 |
| Dimensional transformation of chemical bonding during crystallization in a layered chalcogenide material Y Saito, S Hatayama, Y Shuang, P Fons, AV Kolobov, Y Sutou Scientific reports 11 (1), 4782, 2021 | 17 | 2021 |
| NbTe4 Phase‐Change Material: Breaking the Phase‐Change Temperature Balance in 2D Van der Waals Transition‐Metal Binary Chalcogenide Y Shuang, Q Chen, M Kim, Y Wang, Y Saito, S Hatayama, P Fons, D Ando, ... Advanced Materials 35 (39), 2303646, 2023 | 13 | 2023 |
| Systematic materials design for phase-change memory with small density changes for high-endurance non-volatile memory applications Y Saito, S Hatayama, Y Shuang, S Shindo, P Fons, AV Kolobov, ... Applied Physics Express 12 (5), 051008, 2019 | 12 | 2019 |
| Understanding the low resistivity of the amorphous phase of phase-change material: Experimental evidence for the key role of Cr clusters S Hatayama, K Kobayashi, Y Saito, P Fons, Y Shuang, S Mori, ... Physical Review Materials 5 (8), 085601, 2021 | 10 | 2021 |
| The importance of contacts in Cu2GeTe3 phase change memory devices S Shindo, Y Shuang, S Hatayama, Y Saito, P Fons, AV Kolobov, ... Journal of Applied Physics 128 (16), 2020 | 10 | 2020 |
| Electrical conduction mechanism of β‐MnTe thin film with wurtzite‐type structure using radiofrequency magnetron sputtering M Kim, S Mori, Y Shuang, S Hatayama, D Ando, Y Sutou physica status solidi (RRL)–Rapid Research Letters 16 (9), 2100641, 2022 | 9 | 2022 |
| Nitrogen doping-induced local structure change in a Cr 2 Ge 2 Te 6 inverse resistance phase-change material Y Shuang, S Hatayama, H Tanimura, D Ando, T Ichitsubo, Y Sutou Materials Advances 1 (7), 2426-2432, 2020 | 9 | 2020 |
| Evolution of the local structure surrounding nitrogen atoms upon the amorphous to crystalline phase transition in nitrogen-doped Cr2Ge2Te6 phase-change material Y Shuang, S Hatayama, Y Saito, P Fons, AV Kolobov, D Ando, Y Sutou Applied Surface Science 556, 149760, 2021 | 7 | 2021 |
| Sci Rep H Saito, S Hatayama, Y Shuang, P Fons, AV Kolobov, Y Sutou Tohoku Imperial Univ., l 6, 54, 1927 | 6 | 1927 |
| Temperature‐Dependent Electronic Transport in Non‐Bulk‐Resistance‐Variation Nitrogen‐Doped Cr2Ge2Te6 Phase‐Change Material Y Shuang, S Hatayama, D Ando, Y Sutou physica status solidi (RRL)–Rapid Research Letters 15 (3), 2000415, 2021 | 5 | 2021 |
| Direct observation of phase-change volume in contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material Y Shuang, D Ando, Y Song, Y Sutou Applied Physics Letters 124 (6), 2024 | 4 | 2024 |
| Origins of midgap states in Te-based Ovonic threshold switch materials S Hatayama, Y Saito, P Fons, Y Shuang, M Kim, Y Sutou Acta Materialia 258, 119209, 2023 | 4 | 2023 |
