| Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot X Zhang, RZ Hu, HO Li, FM Jing, Y Zhou, RL Ma, M Ni, G Luo, G Cao, ... Physical Review Letters 124 (25), 257701, 2020 | 52 | 2020 |
| Controlling synthetic spin-orbit coupling in a silicon quantum dot with magnetic field X Zhang, Y Zhou, RZ Hu, RL Ma, M Ni, K Wang, G Luo, G Cao, GL Wang, ... Physical Review Applied 15 (4), 044042, 2021 | 27 | 2021 |
| Flopping-mode spin qubit in a Si-MOS quantum dot RZ Hu, RL Ma, M Ni, Y Zhou, N Chu, WZ Liao, ZZ Kong, G Cao, GL Wang, ... Applied Physics Letters 122 (13), 2023 | 13 | 2023 |
| Improving mobility of silicon metal-oxide–semiconductor devices for quantum dots by high vacuum activation annealing K Wang, HO Li, G Luo, X Zhang, FM Jing, RZ Hu, Y Zhou, H Liu, GL Wang, ... Europhysics Letters 130 (2), 27001, 2020 | 12 | 2020 |
| An operation guide of si-mos quantum dots for spin qubits RZ Hu, RL Ma, M Ni, X Zhang, Y Zhou, K Wang, G Luo, G Cao, ZZ Kong, ... Nanomaterials 11 (10), 2486, 2021 | 7 | 2021 |
| Efficient initialization of fluxonium qubits based on auxiliary energy levels T Wang, F Wu, F Wang, X Ma, G Zhang, J Chen, H Deng, R Gao, R Hu, ... Physical Review Letters 132 (23), 230601, 2024 | 6 | 2024 |
| Threshold-independent method for single-shot readout of spin qubits in semiconductor quantum dots RZ Hu, SK Zhu, X Zhang, Y Zhou, M Ni, RL Ma, G Luo, ZZ Kong, GL Wang, ... Chinese Physics B 33 (1), 010304, 2023 | 1 | 2023 |
