| Metal oxide resistive switching memory: Materials, properties and switching mechanisms D Kumar, R Aluguri, U Chand, TY Tseng Ceramics International 43, S547-S556, 2017 | 169 | 2017 |
| Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer D Kumar, R Aluguri, U Chand, TY Tseng Applied Physics Letters 110 (20), 2017 | 77 | 2017 |
| Optical and electrical properties of undoped and doped Ge nanocrystals S Das, R Aluguri, S Manna, R Singha, A Dhar, L Pavesi, SK Ray Nanoscale research letters 7, 1-11, 2012 | 49 | 2012 |
| Dielectric and transport properties of carbon nanotube-CdS nanostructures embedded in polyvinyl alcohol matrix SP Mondal, R Aluguri, SK Ray Journal of Applied Physics 105 (11), 2009 | 45 | 2009 |
| Fast, Highly Flexible, and Transparent TaOx-Based Environmentally Robust Memristors for Wearable and Aerospace Applications S Rajasekaran, FM Simanjuntak, D Panda, S Chandrasekaran, R Aluguri, ... ACS Applied Electronic Materials 2 (10), 3131-3140, 2020 | 43 | 2020 |
| Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion D Kumar, R Aluguri, U Chand, TY Tseng Nanotechnology 29 (12), 125202, 2018 | 35 | 2018 |
| One bipolar selector-one resistor for flexible crossbar memory applications D Kumar, R Aluguri, U Chand, TY Tseng IEEE Transactions on Electron Devices 66 (3), 1296-1301, 2019 | 34 | 2019 |
| The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random … S Chandrasekaran, FM Simanjuntak, R Aluguri, TY Tseng Thin Solid Films 660, 777-781, 2018 | 33 | 2018 |
| One bipolar transistor selector-One resistive random access memory device for cross bar memory array R Aluguri, D Kumar, FM Simanjuntak, TY Tseng AIP Advances 7 (9), 2017 | 33 | 2017 |
| Multilayer Ge nanocrystals embedded within Al2O3 matrix for high performance floating gate memory devices R Bar, R Aluguri, S Manna, A Ghosh, PV Satyam, SK Ray Applied Physics Letters 107 (9), 2015 | 31 | 2015 |
| Optical photoresponse of CuS–n-Si radial heterojunction with Si nanocone arrays fabricated by chemical etching AK Katiyar, AK Sinha, S Manna, R Aluguri, SK Ray Physical Chemistry Chemical Physics 15 (48), 20887-20893, 2013 | 30 | 2013 |
| Temperature dependent photoluminescence and electroluminescence characteristics of core-shell Ge–GeO2 nanowires S Manna, A Katiyar, R Aluguri, SK Ray Journal of Physics D: Applied Physics 48 (21), 215103, 2015 | 21 | 2015 |
| Characteristics of flexible and transparent Eu2O3 resistive switching memory at high bending condition R Aluguri, R Sailesh, D Kumar, TY Tseng Nanotechnology 30 (4), 045202, 2018 | 20 | 2018 |
| Enhancement of photoluminescence intensity of erbium doped silica containing Ge nanocrystals: distance dependent interactions S Manna, R Aluguri, R Bar, S Das, N Prtljaga, L Pavesi, SK Ray Nanotechnology 26 (4), 045202, 2015 | 15 | 2015 |
| Size dependent charge storage characteristics of MBE grown Ge nanocrystals on surface oxidized Si R Aluguri, S Das, RK Singha, SK Ray Current Applied Physics 13 (1), 12-17, 2013 | 15 | 2013 |
| Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device D Kumar, R Aluguri, U Chand, TY Tseng Japanese Journal of Applied Physics 57 (4S), 04FE16, 2018 | 11 | 2018 |
| Effect of growth temperature and post-growth annealing on luminescence properties of molecular beam epitaxy grown single layer Ge quantum dots S Das, S Manna, RK Singha, R Aluguri, SK Ray Journal of Applied Physics 113 (6), 2013 | 11 | 2013 |
| MBE-grown Si and Si1− xGex quantum dots embedded within epitaxial Gd2O3 on Si (111) substrate for floating gate memory device S Manna, R Aluguri, A Katiyar, S Das, A Laha, HJ Osten, SK Ray Nanotechnology 24 (50), 505709, 2013 | 9 | 2013 |
| Emission characteristics of self-assembled strained Ge1− xSnx islands for sources in the optical communication region R Bar, AK Katiyar, R Aluguri, SK Ray Nanotechnology 28 (29), 295201, 2017 | 8 | 2017 |
| Direct band gap optical emission from compressively strained Ge films grown on relaxed Si0. 5Ge0. 5 substrate R Aluguri, S Manna, SK Ray Applied Physics Letters 103 (16), 2013 | 8 | 2013 |
Samit K RayDepartment of Physics, IIT Kharagpurכתובת אימייל מאומתת בדומיין phy.iitkgp.ac.in