| A fluorescence resonance energy transfer-derived structure of a quantum dot-protein bioconjugate nanoassembly IL Medintz, JH Konnert, AR Clapp, I Stanish, ME Twigg, H Mattoussi, ... Proceedings of the National Academy of Sciences 101 (26), 9612-9617, 2004 | 380 | 2004 |
| Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN DD Koleske, AE Wickenden, RL Henry, ME Twigg Journal of crystal growth 242 (1-2), 55-69, 2002 | 365 | 2002 |
| GaN decomposition in H2 and N2 at MOVPE temperatures and pressures DD Koleske, AE Wickenden, RL Henry, JC Culbertson, ME Twigg Journal of crystal growth 223 (4), 466-483, 2001 | 282 | 2001 |
| Thiol-terminated di-, tri-, and tetraethylene oxide functionalized gold nanoparticles: a water-soluble, charge-neutral cluster EE Foos, AW Snow, ME Twigg, MG Ancona Chemistry of Materials 14 (5), 2401-2408, 2002 | 178 | 2002 |
| Resistivity control in unintentionally doped GaN films grown by MOCVD AE Wickenden, DD Koleske, RL Henry, ME Twigg, M Fatemi Journal of crystal growth 260 (1-2), 54-62, 2004 | 146 | 2004 |
| Compliant substrates: a comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides KD Hobart, FJ Kub, M Fatemi, ME Twigg, PE Thompson, TS Kuan, ... Journal of Electronic Materials 29, 897-900, 2000 | 118 | 2000 |
| Enhanced GaN decomposition in near atmospheric pressures DD Koleske, AE Wickenden, RL Henry, ME Twigg, JC Culbertson, ... Applied physics letters 73 (14), 2018-2020, 1998 | 102 | 1998 |
| Review of LiFePO4 phase transition mechanisms and new observations from x-ray absorption spectroscopy CT Love, A Korovina, CJ Patridge, KE Swider-Lyons, ME Twigg, ... Journal of The Electrochemical Society 160 (5), A3153, 2013 | 82 | 2013 |
| Technique for perfecting the active regions of wide bandgap semiconductor nitride devices M Peckerar, R Henry, D Koleske, A Wickenden, CR Eddy Jr, R Holm, ... US Patent 7,198,970, 2007 | 76 | 2007 |
| Lattice walks by long jumps JD Wrigley, ME Twigg, G Ehrlich The Journal of chemical physics 93 (4), 2885-2902, 1990 | 76 | 1990 |
| Structure of stacking faults formed during the forward bias of diodes ME Twigg, RE Stahlbush, M Fatemi, SD Arthur, JB Fedison, JB Tucker, ... Applied physics letters 82 (15), 2410-2412, 2003 | 75 | 2003 |
| Surface segregation and structure of Sb-doped Si (100) films grown at low temperature by molecular beam epitaxy KD Hobart, DJ Godbey, ME Twigg, M Fatemi, PE Thompson, DS Simons Surface Science 334 (1-3), 29-38, 1995 | 72 | 1995 |
| The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys AE Wickenden, DD Koleske, RL Henry, RJ Gorman, ME Twigg, M Fatemi, ... Journal of Electronic Materials 29, 21-26, 2000 | 71 | 2000 |
| Growth of high quality, epitaxial InSb nanowires HD Park, SM Prokes, ME Twigg, Y Ding, ZL Wang Journal of crystal growth 304 (2), 399-401, 2007 | 69 | 2007 |
| Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging YN Picard, JD Caldwell, ME Twigg, CR Eddy, MA Mastro, RL Henry, ... Applied Physics Letters 91 (9), 2007 | 67 | 2007 |
| Defect mechanisms in degradation of 1.3-μm wavelength channeled-substrate buried heterostructure lasers SNG Chu, S Nakahara, ME Twigg, LA Koszi, EJ Flynn, AK Chin, ... Journal of applied physics 63 (3), 611-623, 1988 | 67 | 1988 |
| Low‐temperature cleaning processes for Si molecular beam epitaxy PE Thompson, ME Twigg, DJ Godbey, KD Hobart, DS Simons Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 66 | 1993 |
| Resolving the Burgers vector for individual GaN dislocations by electron channeling contrast imaging YN Picard, ME Twigg, JD Caldwell, CR Eddy Jr, MA Mastro, RT Holm Scripta Materialia 61 (8), 773-776, 2009 | 63 | 2009 |
| Increasing efficiency of photoelectronic conversion by encapsulation of photosynthetic reaction center proteins in arrayed carbon nanotube electrode N Lebedev, SA Trammell, S Tsoi, A Spano, JH Kim, J Xu, ME Twigg, ... Langmuir 24 (16), 8871-8876, 2008 | 63 | 2008 |
| MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates MA Mastro, CR Eddy Jr, DK Gaskill, ND Bassim, J Casey, A Rosenberg, ... Journal of crystal growth 287 (2), 610-614, 2006 | 63 | 2006 |
