עקוב אחר
Sayeef Salahuddin
Sayeef Salahuddin
TSMC Distinguished Professor of EECS, University of California, Berkeley
כתובת אימייל מאומתת בדומיין berkeley.edu
כותרת
צוטט על ידי
צוטט על ידי
שנה
Progress, challenges, and opportunities in two-dimensional materials beyond graphene
SZ Butler, SM Hollen, L Cao, Y Cui, JA Gupta, HR Gutiérrez, TF Heinz, ...
ACS nano 7 (4), 2898-2926, 2013
52742013
Use of negative capacitance to provide voltage amplification for low power nanoscale devices
S Salahuddin, S Datta
Nano letters 8 (2), 405-410, 2008
23532008
How Good Can Monolayer MoS2 Transistors Be?
Y Yoon, K Ganapathi, S Salahuddin
Nano letters 11 (9), 3768-3773, 2011
18702011
Memory leads the way to better computing
HSP Wong, S Salahuddin
Nature nanotechnology 10 (3), 191-194, 2015
9752015
Proposal for an all-spin logic device with built-in memory
B Behin-Aein, D Datta, S Salahuddin, S Datta
Nature nanotechnology 5 (4), 266-270, 2010
9722010
Negative capacitance in a ferroelectric capacitor
AI Khan, K Chatterjee, B Wang, S Drapcho, L You, C Serrao, SR Bakaul, ...
Nature materials 14 (2), 182-186, 2015
8452015
Deterministic switching of ferromagnetism at room temperature using an electric field
JT Heron, JL Bosse, Q He, Y Gao, M Trassin, L Ye, JD Clarkson, C Wang, ...
Nature 516 (7531), 370-373, 2014
8022014
Room-temperature antiferromagnetic memory resistor
X Marti, I Fina, C Frontera, J Liu, P Wadley, Q He, RJ Paull, JD Clarkson, ...
Nature materials 13 (4), 367-374, 2014
7512014
Enhanced ferroelectricity in ultrathin films grown directly on silicon
SS Cheema, D Kwon, N Shanker, R Dos Reis, SL Hsu, J Xiao, H Zhang, ...
Nature 580 (7804), 478-482, 2020
7392020
The era of hyper-scaling in electronics
S Salahuddin, K Ni, S Datta
Nature electronics 1 (8), 442-450, 2018
6422018
Electric-field-induced magnetization reversal in a ferromagnet-multiferroic heterostructure
JT Heron, M Trassin, K Ashraf, M Gajek, Q He, SY Yang, DE Nikonov, ...
Physical review letters 107 (21), 217202, 2011
5322011
Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
H Ko, K Takei, R Kapadia, S Chuang, H Fang, PW Leu, K Ganapathi, ...
Nature 468 (7321), 286-289, 2010
4842010
Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
A Islam Khan, D Bhowmik, P Yu, S Joo Kim, X Pan, R Ramesh, ...
Applied Physics Letters 99 (11), 2011
4022011
Ferroelectric negative capacitance MOSFET: Capacitance tuning & antiferroelectric operation
AI Khan, CW Yeung, C Hu, S Salahuddin
2011 International Electron Devices Meeting, 11.3. 1-11.3. 4, 2011
3872011
Spatially resolved steady-state negative capacitance
AK Yadav, KX Nguyen, Z Hong, P García-Fernández, P Aguado-Puente, ...
Nature 565 (7740), 468-471, 2019
3632019
Sub-60mV-swing negative-capacitance FinFET without hysteresis
KS Li, PG Chen, TY Lai, CH Lin, CC Cheng, CC Chen, YJ Wei, YF Hou, ...
2015 IEEE International Electron Devices Meeting (IEDM), 22.6. 1-22.6. 4, 2015
3622015
Switching of perpendicularly polarized nanomagnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy
L You, OJ Lee, D Bhowmik, D Labanowski, J Hong, J Bokor, ...
Proceedings of the National Academy of Sciences 112 (33), 10310-10315, 2015
3552015
Sustained Sub-60 mV/decade Switching via the Negative Capacitance Effect in MoS2 Transistors
FA McGuire, YC Lin, K Price, GB Rayner, S Khandelwal, S Salahuddin, ...
Nano letters 17 (8), 4801-4806, 2017
2972017
Direct Observation of Negative Capacitance in Polycrystalline Ferroelectric HfO2
M Hoffmann, M Pešić, K Chatterjee, AI Khan, S Salahuddin, S Slesazeck, ...
Advanced Functional Materials 26 (47), 8643-8649, 2016
2972016
Spin Hall effect clocking of nanomagnetic logic without a magnetic field
D Bhowmik, L You, S Salahuddin
Nature nanotechnology 9 (1), 59-63, 2014
2852014
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מאמרים 1–20