מאמרים עם הרשאות לגישה ציבורית - Srimanta Baishyaלמידע נוסף
לא זמינים באתר כלשהו: 22
A tunneling current density model for ultra thin HfO2 high-k dielectric material based MOS devices
NP Maity, R Maity, RK Thapa, S Baishya
Superlattices and Microstructures 95, 24-32, 2016
הרשאות: Department of Science & Technology, India
Dependence of RF/analog and linearity figure of merits on temperature in ferroelectric FinFET: a simulation study
R Saha, R Goswami, B Bhowmick, S Baishya
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 67 …, 2020
הרשאות: Department of Science & Technology, India
A Tunneling Current Model with a Realistic Barrier for Ultra-Thin High-k Dielectric ZrO2 Material Based MOS Devices
NP Maity, R Maity, S Baishya
Silicon 10, 1645-1652, 2018
הרשאות: Department of Science & Technology, India
Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET
R Saha, DK Panda, R Goswami, B Bhowmick, S Baishya
International Journal of RF and Microwave Computer‐Aided Engineering 31 (4 …, 2021
הרשאות: Department of Science & Technology, India
Image force effect on tunneling current for ultra thin high-K dielectric material Al2O3 based metal oxide semiconductor devices
NP Maity, R Maity, RK Thapa, S Baishya
Journal of Nanoelectronics and Optoelectronics 10 (5), 645-648, 2015
הרשאות: Department of Science & Technology, India
Performance analysis of vertical super-thin body (VSTB) FET and its characteristics in presence of noise
K Roy Barman, S Baishya
Applied Physics A 125, 1-14, 2019
הרשאות: Council of Scientific and Industrial Research, India
DC and RF/analog parameters in Ge‐source split drain‐ZHP‐TFET: drain and pocket engineering technique
R Saha, DK Panda, R Goswami, B Bhowmick, S Baishya
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2022
הרשאות: Department of Science & Technology, India
An insight to the performance of vertical super-thin body (VSTB) FET in presence of interface traps and corresponding noise and RF characteristics
K Roy Barman, S Baishya
Applied Physics A 125, 1-12, 2019
הרשאות: Council of Scientific and Industrial Research, India
Effect of image force on tunneling current for ultra thin oxide layer based metal oxide semiconductor devices
NP Maity, R Maity, RK Thapa, S Baishya
Nanoscience and Nanotechnology Letters 7 (4), 331-333, 2015
הרשאות: Department of Science & Technology, India
Impact of lateral straggle on linearity performance in gate-modulated (GM) TFET
R Saha, B Bhowmick, S Baishya
Applied Physics A 126, 1-5, 2020
הרשאות: Council of Scientific and Industrial Research, India, Department of Science …
Analysis of Interface Charge Densities for High-k Dielectric Materials based Metal Oxide Semiconductor Devices
NP Maity, RR Thakur, R Maity, RK Thapa, S Baishya
International Journal of Nanoscience 15 (05n06), 1660011, 2016
הרשאות: Department of Science & Technology, India
Influence of image force effect on tunneling current density for high-k material ZrO2 ultra thin films based MOS devices
NP Maity, R Maity, S Baishya
Journal of Nanoelectronics and Optoelectronics 12 (1), 67-71, 2017
הרשאות: Department of Science & Technology, India
Effect of drain engineering on DC and RF characteristics in Ge-source SD-ZHP-TFET
R Saha, DK Panda, R Goswami, B Bhowmick, S Baishya
2021 Devices for Integrated Circuit (DevIC), 517-520, 2021
הרשאות: Department of Science & Technology, India
Study of temperature effect on analog/RF and linearity performance of dual material gate (DMG) vertical super-thin body (VSTB) FET
KR Barman, S Baishya
Silicon 13, 1993-2002, 2021
הרשאות: Council of Scientific and Industrial Research, India
Comparison of different high-k dielectric materials in MOS device from CV Characteristics
NP Maity, RK Thapa, S Baishya
Advanced Materials Research 816, 60-64, 2013
הרשאות: Department of Science & Technology, India
An architectural parametric analysis for vertical super-thin body (VSTB) MOSFET with double material gate (DMG)
KR Barman, S Baishya
TENCON 2019-2019 IEEE Region 10 Conference (TENCON), 62-66, 2019
הרשאות: Council of Scientific and Industrial Research, India
Impact of work function on analog/RF and linearity parameters in step-FinFET
R Saha, B Bhowmick, S Baishya
Indian Journal of Physics 95, 2387-2392, 2021
הרשאות: Department of Science & Technology, India
RF/Analog and Linearity Performance Evaluation of a Step-FinFET under Variation in Temperature
R Saha, B Bhowmick, S Baishya
Electrical and Electronic Devices, Circuits and Materials, 25-42, 2021
הרשאות: Department of Science & Technology, India
Robustness to ambipolarity and improvement to HF FOMs of dual-stacked-gate dielectrics underlap heterojunction TFETs
R Das, B Bhowmick, S Baishya
Indian Journal of Physics 95, 1345-1350, 2021
הרשאות: Council of Scientific and Industrial Research, India
Hot carrier effect in Ferro-FinFET for variation in temperature, work function, and FE layer thickness
R Saha, B Bhowmick, S Baishya
Integrated Ferroelectrics 221 (1), 168-179, 2021
הרשאות: Department of Science & Technology, India
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