Carrier dynamics and electro-optical characterization of high-performance GaN/InGaN core-shell nanowire light-emitting diodes M Nami, IE Stricklin, KM DaVico, S Mishkat-Ul-Masabih, ...
Scientific reports 8 (1), 501, 2018
90 2018 High-speed nonpolar InGaN/GaN LEDs for visible-light communication A Rashidi, M Monavarian, A Aragon, S Okur, M Nami, ...
IEEE Photonics Technology Letters 29 (4), 381-384, 2017
82 2017 Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes A Rashidi, M Nami, M Monavarian, A Aragon, K DaVico, F Ayoub, ...
Journal of Applied Physics 122 (3), 2017
70 2017 Electrically injected nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors S Mishkat-Ul-Masabih, A Aragon, M Monavarian, T Luk, D Feezell
Applied Physics Express 12 (3), 036504, 2019
67 2019 Electrically injected GHz-class GaN/InGaN core–shell nanowire-based μLEDs: carrier dynamics and nanoscale homogeneity M Nami, A Rashidi, M Monavarian, S Mishkat-Ul-Masabih, ...
Acs Photonics 6 (7), 1618-1625, 2019
60 2019 Nanoporous distributed Bragg reflectors on free-standing nonpolar m-plane GaN S Mishkat-Ul-Masabih, TS Luk, A Rishinaramangalam, M Monavarian, ...
Applied Physics Letters 112 (4), 2018
44 2018 Techniques to reduce thermal resistance in flip‐chip GaN‐based VCSELs S Mishkat‐Ul‐Masabih, J Leonard, D Cohen, S Nakamura, D Feezell
physica status solidi (a) 214 (8), 1600819, 2017
34 2017 Smooth and selective photo-electrochemical etching of heavily doped GaN: Si using a mode-locked 355 nm microchip laser SG Lee, S Mishkat-Ul-Masabih, JT Leonard, DF Feezell, DA Cohen, ...
Applied Physics Express 10 (1), 011001, 2016
31 2016 Controlled growth of ordered III-nitride core–shell nanostructure arrays for visible optoelectronic devices AK Rishinaramangalam, SM Ul Masabih, MN Fairchild, JB Wright, ...
Journal of Electronic Materials 44, 1255-1262, 2015
31 2015 High-speed nonpolar InGaN/GaN superluminescent diode with 2.5 GHz modulation bandwidth A Rashidi, AK Rishinaramangalam, AA Aragon, S Mishkat-Ul-Masabih, ...
IEEE Photonics Technology Letters 32 (7), 383-386, 2020
17 2020 Polarization-pinned emission of a continuous-wave optically pumped nonpolar GaN-based VCSEL using nanoporous distributed Bragg reflectors S Mishkat-Ul-Masabih, T Luk, M Monavarian, D Feezell
Optics Express 27 (7), 9495-9501, 2019
15 2019 Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar S Okur, AK Rishinaramangalam, S Mishkat-Ul-Masabih, M Nami, S Liu, ...
Nanotechnology 29 (23), 235206, 2018
5 2018 Nonpolar GaN-based superluminescent diode with 2.5 GHz modulation bandwidth AK Rishinaramangalam, A Rashidi, SMU Masabih, AA Aragon, ...
2018 IEEE International Semiconductor Laser Conference (ISLC), 1-2, 2018
4 2018 Selective-area growth of III-nitride core-shell nanowalls for light-emitting and laser diodes AK Rishinaramangalam, MN Fairchild, SMU Masabih, DM Shima, ...
2014 Conference on Lasers and Electro-Optics (CLEO)-Laser Science to …, 2014
4 2014 Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors SM Mishkat-Ul-Masabih, AA Aragon, M Monavarian, TS Luk, DF Feezell
Gallium Nitride Materials and Devices XV 11280, 54-68, 2020
2 2020 Optically Pumped Polarization-Pinned GaN-Based Vertical-Cavity Surface-Emitting Lasers using Nanoporous Distributed Bragg Reflectors SM Mishkat-Ul-Masabih, TS Luk, M Monavarian, DF Feezell
2018 IEEE International Semiconductor Laser Conference (ISLC), 1-2, 2018
2 2018 Devices comprising distributed bragg reflectors and methods of making the devices T Busani, D Feezell, M Behzadirad, M Monavarian, S Mishkat-ul-masabih
US Patent App. 17/780,689, 2023
1 2023 Nonpolar GaN-Based VCSELs with Lattice-Matched Nanoporous Distributed Bragg Reflector Mirrors SM Mishkat-Ul-Masabih
The University of New Mexico, 2019
1 2019 Adaptive relay selection scheme using hybrid forwarding protocol SM Mishkat-Ul-Masabih, MS Alam, MR Hasan
ICTC 2011, 46-51, 2011
1 2011 Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etching M Monavarian, D Feezell, A Aragon, S Mishkat-ul-masabih, A Allerman, ...
US Patent 11,715,635, 2023
2023 
Daniel FeezellUniversity of New Mexicoכתובת אימייל מאומתת בדומיין unm.edu