עקוב אחר
Hyun Goo Ji
Hyun Goo Ji
שותפות לא ידועה
כתובת אימייל מאומתת בדומיין samsung.com
כותרת
צוטט על ידי
צוטט על ידי
שנה
Chemically Tuned p‐ and n‐Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics
HG Ji, P Solís‐Fernández, D Yoshimura, M Maruyama, T Endo, Y Miyata, ...
Advanced Materials 31 (42), 1903613, 2019
1902019
High Mobility WS2 Transistors Realized by Multilayer Graphene Electrodes and Application to High Responsivity Flexible Photodetectors
AS Aji, P Solís‐Fernández, HG Ji, K Fukuda, H Ago
Advanced Functional Materials 27 (47), 1703448, 2017
1432017
Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire
K Suenaga, HG Ji, YC Lin, T Vincent, M Maruyama, AS Aji, Y Shiratsuchi, ...
ACS nano 12 (10), 10032-10044, 2018
922018
Hydrogen-assisted epitaxial growth of monolayer tungsten disulfide and seamless grain stitching
HG Ji, YC Lin, K Nagashio, M Maruyama, P Solís-Fernández, A Sukma Aji, ...
Chemistry of Materials 30 (2), 403-411, 2018
802018
Ready-to-transfer two-dimensional materials using tunable adhesive force tapes
M Nakatani, S Fukamachi, P Solís-Fernández, S Honda, K Kawahara, ...
Nature Electronics 7 (2), 119-130, 2024
572024
Vapor Phase Selective Growth of Two-Dimensional Perovskite/WS2 Heterostructures for Optoelectronic Applications
U Erkılıç, P Solís-Fernández, HG Ji, K Shinokita, YC Lin, M Maruyama, ...
ACS Applied Materials & Interfaces 11 (43), 40503-40511, 2019
552019
Electrical spectroscopy of defect states and their hybridization in monolayer MoS2
Y Zhao, M Tripathi, K Čerņevičs, A Avsar, HG Ji, JF Gonzalez Marin, ...
Nature communications 14 (1), 44, 2023
502023
A large-scale integrated vector–matrix multiplication processor based on monolayer molybdenum disulfide memories
G Migliato Marega, HG Ji, Z Wang, G Pasquale, M Tripathi, A Radenovic, ...
Nature Electronics 6 (12), 991-998, 2023
392023
Superconducting 2D NbS2 Grown Epitaxially by Chemical Vapor Deposition
Z Wang, CY Cheon, M Tripathi, GM Marega, Y Zhao, HG Ji, M Macha, ...
ACS nano 15 (11), 18403–18410, 2021
352021
Substitutional p‐Type Doping in NbS2–MoS2 Lateral Heterostructures Grown by MOCVD
Z Wang, M Tripathi, Z Golsanamlou, P Kumari, G Lovarelli, F Mazziotti, ...
Advanced Materials 35 (14), 2209371, 2023
332023
Stacking Orientation-Dependent Photoluminescence Pathways in Artificially Stacked Bilayer WS2 Nanosheets Grown by Chemical Vapor Deposition: Implications …
HG Ji, P Solís-Fernández, U Erkılıç, H Ago
ACS Applied Nano Materials 4 (4), 3717-3724, 2021
262021
Scanning moiré fringe method: a superior approach to perceive defects, interfaces, and distortion in 2D materials
YC Lin, HG Ji, LJ Chang, YP Chang, Z Liu, GD Lee, PW Chiu, H Ago, ...
ACS nano 14 (5), 6034-6042, 2020
172020
Wafer-scale MoS 2 with water-vapor assisted showerhead MOCVD
M Macha, HG Ji, M Tripathi, Y Zhao, M Thakur, J Zhang, A Kis, ...
Nanoscale Advances 4 (20), 4391-4401, 2022
152022
van der Waals interaction-induced photoluminescence weakening and multilayer growth in epitaxially aligned WS 2
HG Ji, M Maruyama, AS Aji, S Okada, K Matsuda, H Ago
Physical Chemistry Chemical Physics 20 (47), 29790-29797, 2018
142018
One-step vapour phase growth of two-dimensional formamidinium-based perovskite and its hot carrier dynamics
U Erkılıç, HG Ji, E Nishibori, H Ago
Physical Chemistry Chemical Physics 22 (37), 21512-21519, 2020
82020
Chemical Doping: Chemically Tuned p‐ and n‐Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics (Adv. Mater. 42/2019)
HG Ji, P Solís‐Fernández, D Yoshimura, M Maruyama, T Endo, Y Miyata, ...
Advanced Materials 31 (42), 1970301, 2019
62019
How to Achieve Large-Area Ultra-Fast Operation of MoS2 Monolayer Flash Memories?
GM Marega, Z Wang, Y Zhao, HG Ji, A Ottesen, M Tripathi, A Radenovic, ...
IEEE Nanotechnology Magazine 17 (5), 39-43, 2023
22023
Large-Scale Integrated Vector-Matrix Multiplication Processor Based on Monolayer MoS2
GM Marega, HG Ji, Z Wang, M Tripathi, A Radenovic, A Kis
arXiv preprint arXiv:2303.07183, 2023
12023
Publisher Correction: Ready-to-transfer two-dimensional materials using tunable adhesive force tapes
M Nakatani, S Fukamachi, P Solís-Fernández, S Honda, K Kawahara, ...
Nature Electronics 7 (4), 325-325, 2024
2024
Correction to: Ready-to-transfer two-dimensional materials using tunable adhesive force tapes (Nature Electronics,(2024), 7, 2,(119-130), 10.1038/s41928-024-01121-3)
M Nakatani, S Fukamachi, P Solís-Fernández, S Honda, K Kawahara, ...
Nature Electronics 7 (4), 325, 2024
2024
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