| Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET N Loubet, T Hook, P Montanini, CW Yeung, S Kanakasabapathy, ... 2017 symposium on VLSI technology, T230-T231, 2017 | 996 | 2017 |
| Channel geometry impact and narrow sheet effect of stacked nanosheet CW Yeung, J Zhang, R Chao, O Kwon, R Vega, G Tsutsui, X Miao, ... 2018 IEEE international electron devices meeting (IEDM), 28.6. 1-28.6. 4, 2018 | 94 | 2018 |
| Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector SH Liang, TT Zhang, P Barate, J Frougier, M Vidal, P Renucci, B Xu, ... Physical Review B 90 (8), 085310, 2014 | 86 | 2014 |
| Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure J Frougier, MG Sung, R Xie, C Park, S Bentley US Patent 9,947,804, 2018 | 85 | 2018 |
| A novel dry selective etch of SiGe for the enablement of high performance logic stacked gate-all-around nanosheet devices N Loubet, S Kal, C Alix, S Pancharatnam, H Zhou, C Durfee, M Belyansky, ... 2019 IEEE International Electron Devices Meeting (IEDM), 11.4. 1-11.4. 4, 2019 | 83 | 2019 |
| Full bottom dielectric isolation to enable stacked nanosheet transistor for low power and high performance applications J Zhang, J Frougier, A Greene, X Miao, L Yu, R Vega, P Montanini, ... 2019 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2019 | 82 | 2019 |
| Control of light polarization using optically spin-injected vertical external cavity surface emitting lasers J Frougier, G Baili, M Alouini, I Sagnes, H Jaffrès, A Garnache, C Deranlot, ... Applied Physics Letters 103 (25), 2013 | 73 | 2013 |
| Ag/HfO2based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs N Shukla, B Grisafe, RK Ghosh, N Jao, A Aziz, J Frougier, M Jerry, ... 2016 IEEE International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2016 | 72 | 2016 |
| Inner spacer formation in a nanosheet field-effect transistor J Frougier, R Xie US Patent 10,651,291, 2020 | 67 | 2020 |
| Stacked nanosheet field-effect transistor with air gap spacers J Frougier, R Xie, H Zang, K Cheng, T Yamashita, CC Yeh US Patent 10,269,983, 2019 | 67 | 2019 |
| Complementary FETs with wrap around contacts and method of forming same J Frougier, R Xie, PH Suvarna, H Niimi, SJ Bentley, A Razavieh US Patent 10,192,867, 2019 | 62 | 2019 |
| Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36% enhanced ON current SD J. Frougier, N. Shukla, D. Deng, M. Jerry, A. Aziz, L. Liu, G. Lavallee ... VLSI Technology, 2016 IEEE Symposium on, 1-2, 2016 | 60* | 2016 |
| Inner spacer formation for nanosheet field-effect transistors with tall suspensions G Bouche, J Frougier, R Xie US Patent 10,014,390, 2018 | 48 | 2018 |
| Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting device J Frougier, A Razavieh, R Xie, S Bentley US Patent 9,991,352, 2018 | 47 | 2018 |
| Work function metal patterning for NP space between active nanostructures D Chanemougame, SR Soss, SJ Bentley, J Frougier, R Xie US Patent 10,510,620, 2019 | 41 | 2019 |
| Spin injection at remanence into III-V spin light-emitting diodes using (Co/Pt) ferromagnetic injectors J Zarpellon, H Jaffrès, J Frougier, C Deranlot, JM George, DH Mosca, ... Physical Review B—Condensed Matter and Materials Physics 86 (20), 205314, 2012 | 41 | 2012 |
| Hybrid gate-all-around (GAA) field effect transistor (FET) structure and method of forming R Xie, EJ Nowak, BC Paul, SR Soss, J Frougier, D Chanemougame, ... US Patent 10,332,803, 2019 | 38 | 2019 |
| Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector BS Tao, P Barate, J Frougier, P Renucci, B Xu, A Djeffal, H Jaffrès, ... Applied Physics Letters 108 (15), 2016 | 36 | 2016 |
| Insulated epitaxial structures in nanosheet complementary field effect transistors J Frougier, R Xie, S Bentley, PH Suvarna US Patent 10,256,158, 2019 | 35 | 2019 |
| Accurate measurement of the residual birefringence in VECSEL: Towards understanding of the polarization behavior under spin-polarized pumping J Frougier, G Baili, I Sagnes, D Dolfi, JM George, M Alouini Optics express 23 (8), 9573-9588, 2015 | 33 | 2015 |
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