| Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin films JA Logan, SJ Patel, SD Harrington, CM Polley, BD Schultz, ... Nature communications 7 (1), 11993, 2016 | 79 | 2016 |
| Spin injection and detection up to room temperature in Heusler alloy/-GaAs spin valves TA Peterson, SJ Patel, CC Geppert, KD Christie, A Rath, D Pennachio, ... Physical Review B 94 (23), 235309, 2016 | 69 | 2016 |
| Combined physical and chemical etch to reduce magnetic tunnel junction (MTJ) sidewall damage D Shen, YJ Wang, RY Tong, V Sundar, S Patel US Patent 10,522,749, 2019 | 59 | 2019 |
| Achieving Sub-ns switching of STT-MRAM for future embedded LLC applications through improvement of nucleation and propagation switching mechanisms G Jan, L Thomas, S Le, YJ Lee, H Liu, J Zhu, J Iwata-Harms, S Patel, ... 2016 Ieee Symposium on Vlsi Technology, 1-2, 2016 | 37 | 2016 |
| Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory JM Iwata-Harms, G Jan, S Serrano-Guisan, L Thomas, H Liu, J Zhu, ... Scientific reports 9 (1), 19407, 2019 | 35 | 2019 |
| Demonstration of ultra-low voltage and ultra low power STT-MRAM designed for compatibility with 0x node embedded LLC applications G Jan, L Thomas, S Le, YJ Lee, H Liu, J Zhu, J Iwata-Harms, S Patel, ... 2018 IEEE Symposium on VLSI Technology, 65-66, 2018 | 35 | 2018 |
| Machine learning for continuous quantum error correction on superconducting qubits I Convy, H Liao, S Zhang, S Patel, WP Livingston, HN Nguyen, I Siddiqi, ... New Journal of Physics 24 (6), 063019, 2022 | 29 | 2022 |
| Surface and electronic structure of epitaxial PtLuSb (001) thin films SJ Patel, JK Kawasaki, J Logan, BD Schultz, J Adell, B Thiagarajan, ... Applied Physics Letters 104 (20), 2014 | 28 | 2014 |
| Crystal structure induced preferential surface alloying of Sb on wurtzite/zinc blende GaAs nanowires M Hjort, P Kratzer, S Lehmann, SJ Patel, KA Dick, CJ Palmstrøm, R Timm, ... Nano Letters 17 (6), 3634-3640, 2017 | 22 | 2017 |
| Anisotropic spin relaxation in -GaAs from strong inhomogeneous hyperfine fields produced by the dynamical polarization of nuclei NJ Harmon, TA Peterson, CC Geppert, SJ Patel, CJ Palmstrøm, ... Physical Review B 92 (14), 140201, 2015 | 22 | 2015 |
| STT-MRAM devices with low damping and moment optimized for LLC applications at Ox nodes L Thomas, G Jan, S Serrano-Guisan, H Liu, J Zhu, YJ Lee, S Le, ... 2018 IEEE International Electron Devices Meeting (IEDM), 27.3. 1-27.3. 4, 2018 | 21 | 2018 |
| Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance C Liu, Y Boyko, CC Geppert, KD Christie, G Stecklein, SJ Patel, ... Applied Physics Letters 105 (21), 2014 | 21 | 2014 |
| Surface reconstructions and transport of epitaxial PtLuSb (001) thin films grown by MBE SJ Patel, JA Logan, SD Harrington, BD Schultz, CJ Palmstrøm Journal of Crystal Growth 436, 145-149, 2016 | 18 | 2016 |
| Dynamic detection of electron spin accumulation in ferromagnet–semiconductor devices by ferromagnetic resonance C Liu, SJ Patel, TA Peterson, CC Geppert, KD Christie, G Stecklein, ... Nature communications 7 (1), 10296, 2016 | 18 | 2016 |
| Dual magnetic tunnel junction (DMTJ) stack design V Sundar, YJ Wang, L Thomas, G Jan, S Patel, RY Tong US Patent 10,797,225, 2020 | 15 | 2020 |
| Reduced interface spin polarization by antiferromagnetically coupled Mn segregated to the /GaAs (001) interface A Rath, C Sivakumar, C Sun, SJ Patel, JS Jeong, J Feng, G Stecklein, ... Physical Review B 97 (4), 045304, 2018 | 15 | 2018 |
| Probing magnetic properties of STT-MRAM devices down to sub-20 nm using spin-torque FMR L Thomas, G Jan, S Le, S Serrano-Guisan, YJ Lee, H Liu, J Zhu, ... 2017 IEEE International Electron Devices Meeting (IEDM), 38.4. 1-38.4. 4, 2017 | 15 | 2017 |
| Provably efficient variational generative modeling of quantum many-body systems via quantum-probabilistic information geometry FM Sbahi, AJ Martinez, S Patel, D Saberi, JH Yoo, G Roeder, G Verdon arXiv preprint arXiv:2206.04663, 2022 | 13 | 2022 |
| Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions S Patel, G Jan, RY Tong, V Sundar, D Shen, YJ Wang, PK Wang, H Liu US Patent 10,522,745, 2019 | 13 | 2019 |
| Silicon oxynitride based encapsulation layer for magnetic tunnel junctions V Sundar, YJ Wang, D Shen, S Patel, RY Tong US Patent 10,516,100, 2019 | 10 | 2019 |
