| Room temperature nanocrystalline silicon single-electron transistors YT Tan, T Kamiya, ZAK Durrani, H Ahmed Journal of Applied Physics 94 (1), 633-637, 2003 | 133 | 2003 |
| Single-electron devices and circuits in silicon ZAK Durrani World Scientific, 2009 | 104 | 2009 |
| Charge injection and trapping in silicon nanocrystals MA Rafiq, Y Tsuchiya, H Mizuta, S Oda, S Uno, ZAK Durrani, WI Milne Applied Physics Letters 87 (18), 2005 | 95 | 2005 |
| Hopping conduction in size-controlled Si nanocrystals MA Rafiq, Y Tsuchiya, H Mizuta, S Oda, S Uno, ZAK Durrani, WI Milne Journal of applied physics 100 (1), 2006 | 66 | 2006 |
| Growth, structure, and transport properties of thin (>10 nm) -type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor T Kamiya, K Nakahata, YT Tan, ZAK Durrani, I Shimizu Journal of Applied Physics 89 (11), 6265-6271, 2001 | 65 | 2001 |
| A memory cell with single-electron and metal-oxide-semiconductor transistor integration ZAK Durrani, AC Irvine, H Ahmed, K Nakazato Applied Physics Letters 74 (9), 1293-1295, 1999 | 64 | 1999 |
| Scalable silicon nanowire photodetectors P Servati, A Colli, S Hofmann, YQ Fu, P Beecher, ZAK Durrani, AC Ferrari, ... Physica E: Low-dimensional Systems and Nanostructures 38 (1-2), 64-66, 2007 | 60 | 2007 |
| Coulomb blockade memory using integrated Single-Electron Transistor/Metal-Oxide-Semiconductor transistor gain cells ZAK Durrani, AC Lnine, H Ahmed IEEE Transactions on Electron Devices 47 (12), 2334-2339, 2000 | 57 | 2000 |
| Single-electron effects in heavily doped polycrystalline silicon nanowires AC Irvine, ZAK Durrani, H Ahmed, S Biesemans Applied physics letters 73 (8), 1113-1115, 1998 | 51 | 1998 |
| Pattern-generation and pattern-transfer for single-digit nano devices IW Rangelow, A Ahmad, T Ivanov, M Kaestner, Y Krivoshapkina, ... Journal of Vacuum Science & Technology B 34 (6), 2016 | 49 | 2016 |
| Seebeck coefficient in silicon nanowire arrays E Krali, ZAK Durrani Applied Physics Letters 102 (14), 2013 | 48 | 2013 |
| Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography Z Durrani, M Jones, F Abualnaja, C Wang, M Kaestner, S Lenk, C Lenk, ... Journal of Applied Physics 124 (14), 2018 | 41 | 2018 |
| Room temperature single electron charging in single silicon nanochains MA Rafiq, ZAK Durrani, H Mizuta, A Colli, P Servati, AC Ferrari, WI Milne, ... Journal of Applied Physics 103 (5), 2008 | 41 | 2008 |
| Coulomb blockade, single-electron transistors and circuits in silicon ZAK Durrani Physica E: Low-dimensional Systems and Nanostructures 17, 572-578, 2003 | 40 | 2003 |
| Single-electron effects in side-gated point contacts fabricated in low-temperature deposited nanocrystalline silicon films YT Tan, T Kamiya, ZAK Durrani, H Ahmed Applied Physics Letters 78 (8), 1083-1085, 2001 | 40 | 2001 |
| Electrical and structural properties of solid phase crystallized polycrystalline silicon and their correlation to single-electron effects YT Tan, ZAK Durrani, H Ahmed Journal of Applied Physics 89 (2), 1262-1270, 2001 | 40 | 2001 |
| Coherent states in a coupled quantum dot nanocrystalline silicon transistor MAH Khalafalla, ZAK Durrani, H Mizuta Applied physics letters 85 (12), 2262-2264, 2004 | 39 | 2004 |
| Reduction of grain-boundary potential barrier height in polycrystalline silicon with hot -vapor annealing probed using point-contact devices T Kamiya, ZAK Durrani, H Ahmed, T Sameshima, Y Furuta, H Mizuta, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003 | 39 | 2003 |
| Fast turnaround fabrication of silicon point-contact quantum-dot transistors using combined thermal scanning probe lithography and laser writing C Rawlings, YK Ryu, M Rüegg, N Lassaline, C Schwemmer, U Duerig, ... Nanotechnology 29 (50), 505302, 2018 | 35 | 2018 |
| Switching of single-electron oscillations in dual-gated nanocrystalline silicon point-contact transistors MAH Khalafalla, H Mizuta, ZAK Durrani IEEE transactions on nanotechnology 2 (4), 271-276, 2003 | 35 | 2003 |
