Thermal Stability of (1−x)BiScO3−xPbTiO3 Piezoelectric Ceramics for High‐Temperature Sensor Applications S Chen, X Dong, C Mao, F Cao Journal of the American Ceramic Society 89 (10), 3270-3272, 2006 | 95 | 2006 |
Effects of Niobium Doping on the Microstructure and Electrical Properties of 0.36BiScO3–0.64PbTiO3 Ceramics S Chen, X Dong, H Yang, R Liang, C Mao Journal of the American Ceramic Society 90 (2), 477-482, 2007 | 56 | 2007 |
A graphene field-effect capacitor sensor in electrolyte S Chen, ZB Zhang, L Ma, P Ahlberg, X Gao, Z Qiu, D Wu, W Ren, ... Applied Physics Letters 101 (15), 2012 | 41 | 2012 |
Formation and control of mechanism for the preparation of ultra-fine barium strontium titanate powders by the citrate precursor method C Mao, X Dong, T Zeng, G Wang, S Chen Materials research bulletin 42 (9), 1602-1610, 2007 | 38 | 2007 |
Current instability for silicon nanowire field-effect sensors operating in electrolyte with platinum gate electrodes S Chen, L Nyholm, N Jokilaakso, AE Karlström, J Linnros, U Smith, ... Electrochemical and solid-state letters 14 (7), J34, 2011 | 31 | 2011 |
Contacting versus insulated gate electrode for Si nanoribbon field-effect sensors operating in electrolyte S Chen, SL Zhang Analytical chemistry 83 (24), 9546-9551, 2011 | 26 | 2011 |
Light soaking induced doping increase and sodium redistribution in Cu (In, Ga) Se2-based thin film solar cells S Chen, T Jarmar, S Södergren, U Malm, E Wallin, O Lundberg, S Jander, ... Thin Solid Films 582, 35-38, 2015 | 25 | 2015 |
Device noise reduction for silicon nanowire field-effect-transistor based sensors by using a Schottky junction gate X Chen, S Chen, Q Hu, SL Zhang, P Solomon, Z Zhang ACS sensors 4 (2), 427-433, 2019 | 24 | 2019 |
Multiplexed analysis of molecular and elemental ions using nanowire transistor sensors X Chen, Q Hu, S Chen, NL Netzer, Z Wang, SL Zhang, Z Zhang Sensors and Actuators B: Chemical 270, 89-96, 2018 | 21 | 2018 |
Ion sensing with single charge resolution using sub–10-nm electrical double layer–gated silicon nanowire transistors Q Hu, S Chen, P Solomon, Z Zhang Science Advances 7 (49), eabj6711, 2021 | 17 | 2021 |
An ion-gated bipolar amplifier for ion sensing with enhanced signal and improved noise performance D Zhang, X Gao, S Chen, H Norström, U Smith, P Solomon, SL Zhang, ... Applied Physics Letters 105 (8), 2014 | 17 | 2014 |
Improved CIGS modules by KF post deposition treatment and reduced cell-to-module losses O Lundberg, E Wallin, V Gusak, S Södergren, S Chen, S Lotfi, F Chalvet, ... 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), 1293-1296, 2016 | 16 | 2016 |
All-electrical antibiotic susceptibility testing within 30 min using silicon nano transistors X Xu, S Chen, Y Yu, P Virtanen, J Wu, Q Hu, S Koskiniemi, Z Zhang Sensors and Actuators B: Chemical 357, 131458, 2022 | 11 | 2022 |
A two-terminal silicon nanoribbon field-effect pH sensor S Chen, N Jokilaakso, P Björk, AE Karlström, SL Zhang Applied Physics Letters 97 (26), 2010 | 11 | 2010 |
Gate coupling and carrier distribution in silicon nanowire/nanoribbon transistors operated in electrolyte S Chen, SL Zhang Journal of Vacuum Science & Technology A 29 (1), 2011 | 10 | 2011 |
Low-noise Schottky junction trigate silicon nanowire field-effect transistor for charge sensing X Chen, S Chen, SL Zhang, P Solomon, Z Zhang IEEE Transactions on Electron Devices 66 (9), 3994-4000, 2019 | 9 | 2019 |
Current gain and low-frequency noise of symmetric lateral bipolar junction transistors on SOI Q Hu, X Chen, H Norstrom, S Zeng, Y Liu, F Gustavsson, SL Zhang, ... 2018 48th European Solid-State Device Research Conference (ESSDERC), 258-261, 2018 | 9 | 2018 |
Improving selectivity of ion-sensitive membrane by polyethylene glycol doping Q Hu, S Chen, Z Wang, Z Zhang Sensors and Actuators B: Chemical 328, 128955, 2021 | 7 | 2021 |
Controlled size reduction and its underlying mechanism to form solid-state nanopores via electron beam induced carbon deposition S Zeng, C Wen, S Li, X Chen, S Chen, SL Zhang, Z Zhang Nanotechnology 30 (45), 455303, 2019 | 7 | 2019 |
Current gain enhancement for silicon-on-insulator lateral bipolar junction transistors operating at liquid-helium temperature S Chen, C Luo, Y Zhang, J Xu, Q Hu, Z Zhang, G Guo IEEE Electron Device Letters 41 (6), 800-803, 2020 | 6 | 2020 |