| Metal oxide resistive switching memory: Materials, properties and switching mechanisms D Kumar, R Aluguri, U Chand, TY Tseng Ceramics International 43, S547-S556, 2017 | 170 | 2017 |
| Electrolyte-gated organic field-effect transistors for sensing applications F Buth, D Kumar, M Stutzmann, JA Garrido Applied Physics Letters 98 (15), 2011 | 130 | 2011 |
| flexible solution‐processable black‐phosphorus‐based optoelectronic memristive synapses for neuromorphic computing and artificial visual perception applications D Kumar, H Li, UK Das, AM Syed, N El‐Atab Advanced Materials 35 (28), 2300446, 2023 | 81 | 2023 |
| Enhancement of resistive switching properties in nitride based CBRAM device by inserting an Al2O3 thin layer D Kumar, R Aluguri, U Chand, TY Tseng Applied Physics Letters 110 (20), 2017 | 77 | 2017 |
| High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending Condition D Kumar, U Chand, WS Lew, TY Tseng IEEE Transactions on Electron Devices 67 (2), 493 - 498, 2020 | 67 | 2020 |
| Oxygen Vacancy Transition in HfOx‐Based Flexible, Robust, and Synaptic Bi‐Layer Memristor for Neuromorphic and Wearable Applications A Saleem, D Kumar, A Singh, S Rajasekaran, TY Tseng Advanced Materials Technologies 7 (7), 2101208, 2022 | 49 | 2022 |
| Enhanced linearity in CBRAM synapse by post oxide deposition annealing for neuromorphic computing applications CL Hsu, A Saleem, A Singh, D Kumar, TY Tseng IEEE Transactions on Electron Devices 68 (11), 5578-5584, 2021 | 40 | 2021 |
| Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture U Chand, CY Huang, D Kumar, TY Tseng Applied Physics Letters 107 (20), 2015 | 37 | 2015 |
| Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion D Kumar, R Aluguri, U Chand, TY Tseng Nanotechnology 29 (12), 125202, 2018 | 35 | 2018 |
| One Bipolar Selector-One Resistor for Flexible Crossbar Memory Applications D Kumar, R Aluguri, U Chand, TY Tseng IEEE TRANSACTIONS ON ELECTRON DEVICES 66 (3), 1296-1300, 2019 | 34 | 2019 |
| One bipolar transistor selector - One resistive random access memory device for cross bar memory array R Aluguri, D Kumar, TY Tseng AIP Advances, 2017 | 33 | 2017 |
| Highly Efficient Invisible TaOx/ZTO Bilayer Memristor for Neuromorphic Computing and Image Sensing D Kumar, S Shrivastava, A Saleem, A Singh, H Lee, YH Wang, TY Tseng ACS Applied Electronic Materials 4 (5), 2180-2190, 2022 | 31 | 2022 |
| Highly Transparent ITO/HfO2/ITO Device for Visible-Light Sensing KP SAIRAM, D KUMAR, DS ANG IEEE Access 8, 91648-91652, 2020 | 31 | 2020 |
| ZrN-based flexible resistive switching memory D Kumar, U Chand, LW Siang, TY Tseng IEEE Electron Device Letters 41 (5), 705-708, 2020 | 29 | 2020 |
| Visible light detection and memory capabilities in MgO/HfO₂ bilayer-based transparent structure for photograph sensing D Kumar, PS Kalaga, DS Ang IEEE Transactions on Electron Devices 67 (10), 4274-4280, 2020 | 27 | 2020 |
| Artificial visual perception neural system using a solution-processable MoS2-based in-memory light sensor D Kumar, L Joharji, H Li, A Rezk, A Nayfeh, N El-Atab Light Science & Applications (Nature) 12 (1), 109, 2023 | 26 | 2023 |
| Structural, optical and dielectric properties of ZnTiO3 ceramics PK Jain, D Kumar, A Kumar, D Kaur Optoelectronics and Advanced Materials-Rapid Communications 4 (March 2010 …, 2010 | 24 | 2010 |
| Zn2SnO4 Thin Film Based Nonvolatile Positive Optoelectronic Memory for Neuromorphic Computing S Shrivastava, YT Lin, B Pattanayak, S Pratik, CC Hsu, D Kumar, AS Lin, ... ACS Applied Electronic Materials 4 (4), 1784-1793, 2022 | 22 | 2022 |
| Resistive switching, endurance and retention properties of ZnO/HfO2 bilayer heterostructure memory device N Jain, SK Sharma, R Kumawat, PK Jain, D Kumar, R Vyas Micro and Nanostructures 169, 207366, 2022 | 20 | 2022 |
| Characteristics of flexible and transparent Eu2O3 resistive switching memory at high bending condition R Aluguri, R Sailesh, D Kumar, TY Tseng Nanotechnology 30 (4), 045202, 2018 | 20 | 2018 |
Dr. Umesh ChandIME_A-Star, Singaporeכתובת אימייל מאומתת בדומיין ime.a-star.edu.sg