מאמרים עם הרשאות לגישה ציבורית - Guanyu Zhouלמידע נוסף
זמינים באתר כלשהו: 16
Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials
J Shim, SH Bae, W Kong, D Lee, K Qiao, D Nezich, YJ Park, R Zhao, ...
Science 362 (6415), 665-670, 2018
הרשאות: US National Science Foundation, US Department of Defense
High‐mobility helical tellurium field‐effect transistors enabled by transfer‐free, low‐temperature direct growth
G Zhou, R Addou, Q Wang, S Honari, CR Cormier, L Cheng, R Yue, ...
Advanced Materials 30 (36), 1803109, 2018
הרשאות: US National Science Foundation
Origin of charge transfer and enhanced electron–phonon coupling in single unit-cell FeSe films on SrTiO3
H Zhang, D Zhang, X Lu, C Liu, G Zhou, X Ma, L Wang, P Jiang, QK Xue, ...
Nature Communications 8 (1), 214, 2017
הרשאות: National Natural Science Foundation of China
Ultrafast Dynamics Evidence of High Temperature Superconductivity in Single Unit Cell FeSe on
YC Tian, WH Zhang, FS Li, YL Wu, Q Wu, F Sun, GY Zhou, L Wang, X Ma, ...
Physical Review Letters 116 (10), 107001, 2016
הרשאות: Chinese Academy of Sciences, National Natural Science Foundation of China
Interface-enhanced electron-phonon coupling and high-temperature superconductivity in potassium-coated ultrathin FeSe films on
C Tang, C Liu, G Zhou, F Li, H Ding, Z Li, D Zhang, Z Li, C Song, S Ji, ...
Physical Review B 93 (2), 020507, 2016
הרשאות: National Natural Science Foundation of China
Atomically resolved FeSe/SrTiO3 (001) interface structure by scanning transmission electron microscopy
F Li, Q Zhang, C Tang, C Liu, J Shi, CN Nie, G Zhou, Z Li, W Zhang, ...
2D Materials 3 (2), 024002, 2016
הרשאות: US Department of Energy, Chinese Academy of Sciences, National Natural …
Interface induced high temperature superconductivity in single unit-cell FeSe on SrTiO3 (110)
G Zhou, D Zhang, C Liu, C Tang, X Wang, Z Li, C Song, S Ji, K He, ...
Applied Physics Letters 108 (20), 2016
הרשאות: National Natural Science Foundation of China
Superconductivity dichotomy in K-coated single and double unit cell FeSe films on
C Tang, D Zhang, Y Zang, C Liu, G Zhou, Z Li, C Zheng, X Hu, C Song, ...
Physical Review B 92 (18), 180507, 2015
הרשאות: National Natural Science Foundation of China
Interface enhanced superconductivity in monolayer FeSe films on MgO (001): charge transfer with atomic substitution
G Zhou, Q Zhang, F Zheng, D Zhang, C Liu, X Wang, CL Song, K He, ...
Science Bulletin 63 (12), 747-752, 2018
הרשאות: Chinese Academy of Sciences, National Natural Science Foundation of China
WSe (2− x) Tex alloys grown by molecular beam epitaxy
AT Barton, R Yue, LA Walsh, G Zhou, C Cormier, CM Smyth, R Addou, ...
2D Materials 6 (4), 045027, 2019
הרשאות: US National Science Foundation
A perspective on the doping of transition metal dichalcogenides for ultra-scaled transistors: Challenges and opportunities
R Younas, G Zhou, CL Hinkle
Applied Physics Letters 122 (16), 2023
הרשאות: US National Science Foundation, US Department of Defense
Achieving near-perfect light absorption in atomically thin transition metal dichalcogenides through band nesting
S Lee, D Seo, SH Park, N Izquierdo, EH Lee, R Younas, G Zhou, M Palei, ...
Nature communications 14 (1), 3889, 2023
הרשאות: US National Science Foundation
Discovery of an insulating parent phase in single-layer films
Y Hu, Y Xu, YM Zhang, Q Wang, S He, D Liu, A Liang, J Huang, C Li, ...
Physical Review B 102 (11), 115144, 2020
הרשאות: Chinese Academy of Sciences, National Natural Science Foundation of China
Controlling the Pd Metal Contact Polarity to Trigonal Tellurium by Atomic Hydrogen‐Removal of the Native Tellurium Oxide
CM Smyth, G Zhou, AT Barton, RM Wallace, CL Hinkle
Advanced Materials Interfaces 8 (7), 2002050, 2021
הרשאות: US National Science Foundation
Asymmetrically optimized structure in a high-Tc single unit-cell FeSe superconductor
Y Fukaya, G Zhou, F Zheng, P Zhang, L Wang, QK Xue, S Shamoto
Journal of Physics: Condensed Matter 31 (5), 055701, 2018
הרשאות: National Natural Science Foundation of China
Materials and device strategies for nanoelectronic 3D heterogeneous integration
G Zhou, T Sun, R Younas, CL Hinkle
2021 International Conference on Simulation of Semiconductor Processes and …, 2021
הרשאות: US National Science Foundation
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