| On the origin of the 265 nm absorption band in AlN bulk crystals R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ... Applied Physics Letters 100 (19), 2012 | 189 | 2012 |
| Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ... Journal of The Electrochemical Society 158 (5), H530, 2011 | 166 | 2011 |
| Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport Y Kumagai, Y Kubota, T Nagashima, T Kinoshita, R Dalmau, R Schlesser, ... Applied Physics Express 5 (5), 055504, 2012 | 159 | 2012 |
| Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy T Kinoshita, K Hironaka, T Obata, T Nagashima, R Dalmau, R Schlesser, ... Applied Physics Express 5 (12), 122101, 2012 | 155 | 2012 |
| Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy T Kinoshita, T Obata, T Nagashima, H Yanagi, B Moody, S Mita, S Inoue, ... Applied Physics Express 6 (9), 092103, 2013 | 151 | 2013 |
| Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures J Xie, S Mita, Z Bryan, W Guo, L Hussey, B Moody, R Schlesser, R Kirste, ... Applied Physics Letters 102 (17), 171102, 2013 | 132 | 2013 |
| Vacancy compensation and related donor-acceptor pair recombination in bulk AlN BE Gaddy, Z Bryan, I Bryan, R Kirste, J Xie, R Dalmau, B Moody, ... Applied Physics Letters 103 (16), 161901, 2013 | 110 | 2013 |
| 226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection D Liu, SJ Cho, J Park, J Gong, JH Seo, R Dalmau, D Zhao, K Kim, M Kim, ... Applied Physics Letters 113 (1), 011111, 2018 | 99 | 2018 |
| Optically pumped UV lasers grown on bulk AlN substrates T Wunderer, CL Chua, JE Northrup, Z Yang, NM Johnson, M Kneissl, ... physica status solidi (c) 9 (3‐4), 822-825, 2012 | 91 | 2012 |
| The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN BE Gaddy, Z Bryan, I Bryan, J Xie, R Dalmau, B Moody, Y Kumagai, ... Applied Physics Letters 104 (20), 202106, 2014 | 88 | 2014 |
| 229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection D Liu, SJ Cho, J Park, JH Seo, R Dalmau, D Zhao, K Kim, J Gong, M Kim, ... Applied Physics Letters 112 (8), 081101, 2018 | 85 | 2018 |
| Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures PT Barletta, E Acar Berkman, BF Moody, NA El-Masry, AM Emara, ... Applied physics letters 90 (15), 151109, 2007 | 85 | 2007 |
| Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells ME Aumer, SF LeBoeuf, BF Moody, SM Bedair Applied Physics Letters 79 (23), 3803-3805, 2001 | 68 | 2001 |
| Characterization of dislocation arrays in AlN single crystals grown by PVT R Dalmau, B Moody, J Xie, R Collazo, Z Sitar physica status solidi (a) 208 (7), 1545-1547, 2011 | 53 | 2011 |
| High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates P Reddy, M Hayden Breckenridge, Q Guo, A Klump, D Khachariya, ... Applied Physics Letters 116 (8), 2020 | 46 | 2020 |
| Characterization of threading dislocations in PVT-grown AlN substrates via X-ray topography and ray tracing simulation T Zhou, B Raghothamachar, F Wu, R Dalmau, B Moody, S Craft, ... Journal of electronic materials 43, 838-842, 2014 | 40 | 2014 |
| Low defect density bulk AlN substrates for high performance electronics and optoelectronics B Raghothamachar, R Dalmau, B Moody, HS Craft, R Schlesser, JQ Xie, ... Materials Science Forum 717, 1287-1290, 2012 | 37 | 2012 |
| Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures ME Aumer, SF LeBoeuf, BF Moody, SM Bedair, K Nam, JY Lin, HX Jiang Applied physics letters 80 (17), 3099-3101, 2002 | 36 | 2002 |
| Design of AlGaN-based quantum structures for low threshold UVC lasers Q Guo, R Kirste, S Mita, J Tweedie, P Reddy, B Moody, Y Guan, ... Journal of Applied Physics 126 (22), 223101, 2019 | 33 | 2019 |
| Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment K Kim, JH Ryu, J Kim, SJ Cho, D Liu, J Park, IK Lee, B Moody, W Zhou, ... ACS Applied Materials & Interfaces 9 (20), 17576-17585, 2017 | 33 | 2017 |
Zlatko SitarKobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina Stateכתובת אימייל מאומתת בדומיין ncsu.edu
