מאמרים עם הרשאות לגישה ציבורית - Baxter Moodyלמידע נוסף
לא זמינים באתר כלשהו: 2
בדוק
Progress and Challenges of AlGaN Schottky Diodes Grown on AlN Substrates‏
R Dalmau, HS Craft, R Schlesser, S Mita, J Smart, C Hitchcock, G Pandey, ...‏
ECS Transactions 80 (7), 217, 2017‏
הרשאות: US Department of Energy‏
בדוק
Anderson transition in compositionally graded p-AlGaN‏
S Rathkanthiwar, P Reddy, CE Quiñones, J Loveless, M Kamiyama, ...‏
Journal of Applied Physics 134 (19), 2023‏
הרשאות: US National Science Foundation, US Department of Energy, US Department of …‏
זמינים באתר כלשהו: 19
בדוק
226 nm AlGaN/AlN UV LEDs using p-type Si for hole injection and UV reflection‏
D Liu, SJ Cho, J Park, J Gong, JH Seo, R Dalmau, D Zhao, K Kim, M Kim, ...‏
Applied Physics Letters 113 (1), 011111, 2018‏
הרשאות: US Department of Defense‏
בדוק
229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection‏
D Liu, SJ Cho, J Park, JH Seo, R Dalmau, D Zhao, K Kim, J Gong, M Kim, ...‏
Applied Physics Letters 112 (8), 081101, 2018‏
הרשאות: US Department of Defense‏
בדוק
High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates‏
P Reddy, M Hayden Breckenridge, Q Guo, A Klump, D Khachariya, ...‏
Applied Physics Letters 116 (8), 2020‏
הרשאות: US National Science Foundation, US Department of Energy, US Department of …‏
בדוק
Design of AlGaN-based quantum structures for low threshold UVC lasers‏
Q Guo, R Kirste, S Mita, J Tweedie, P Reddy, B Moody, Y Guan, ...‏
Journal of Applied Physics 126 (22), 223101, 2019‏
הרשאות: US National Science Foundation, US Department of Defense‏
בדוק
Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment‏
K Kim, JH Ryu, J Kim, SJ Cho, D Liu, J Park, IK Lee, B Moody, W Zhou, ...‏
ACS Applied Materials & Interfaces 9 (20), 17576-17585, 2017‏
הרשאות: US Department of Defense‏
בדוק
P-type silicon as hole supplier for nitride-based UVC LEDs‏
SJ Cho, D Liu, JH Seo, R Dalmau, K Kim, J Park, J Gong, D Zhao, F Wang, ...‏
New Journal of Physics 21 (2), 023011, 2019‏
הרשאות: US Department of Defense‏
בדוק
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing‏
D Khachariya, S Stein, W Mecouch, MH Breckenridge, S Rathkanthiwar, ...‏
Applied Physics Express 15 (10), 101004, 2022‏
הרשאות: US National Science Foundation, US Department of Energy‏
בדוק
Influences of screw dislocations on electroluminescence of AlGaN/AlN-based UVC LEDs‏
D Liu, SJ Cho, H Zhang, CR Carlos, ARK Kalapala, J Park, J Kim, ...‏
AIP Advances 9 (8), 085128, 2019‏
הרשאות: US Department of Defense‏
בדוק
High p-conductivity in AlGaN enabled by polarization field engineering‏
S Rathkanthiwar, P Reddy, B Moody, C Quiñones-García, P Bagheri, ...‏
Applied Physics Letters 122 (15), 152105, 2023‏
הרשאות: US National Science Foundation, US Department of Defense‏
בדוק
Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates‏
P Reddy, W Mecouch, M Hayden Breckenridge, D Khachariya, P Bagheri, ...‏
physica status solidi (RRL)–Rapid Research Letters 16 (6), 2100619, 2022‏
הרשאות: US Department of Defense, US National Aeronautics and Space Administration‏
בדוק
Residual stress analysis of aluminum nitride piezoelectric micromachined ultrasonic transducers using Raman spectroscopy‏
JS Lundh, K Coleman, Y Song, BA Griffin, G Esteves, EA Douglas, ...‏
Journal of Applied Physics 130 (4), 044501, 2021‏
הרשאות: US National Science Foundation, US Department of Energy, US Department of …‏
בדוק
Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates‏
ARK Kalapala, D Liu, SJ Cho, J Park, D Zhao, JD Albrecht, B Moody, Z Ma, ...‏
Opto-Electronic Advances 3 (4), 190025-1-190025-6, 2020‏
הרשאות: US Department of Defense‏
בדוק
On the conduction mechanism in compositionally graded AlGaN‏
S Rathkanthiwar, P Bagheri, D Khachariya, JH Kim, Y Kajikawa, P Reddy, ...‏
Applied Physics Letters 121 (7), 072106, 2022‏
הרשאות: US National Science Foundation, US Department of Defense‏
בדוק
X-Ray Metrology of AlN Single Crystal Substrates‏
R Dalmau, J Britt, B Moody, R Schlesser‏
ECS Transactions 92 (7), 113, 2019‏
הרשאות: US Department of Defense‏
בדוק
Weak localization and dimensional crossover in compositionally graded AlxGa1−xN‏
A Al-Tawhid, AA Shafe, P Bagheri, Y Guan, P Reddy, S Mita, B Moody, ...‏
Applied Physics Letters 118 (8), 082101, 2021‏
הרשאות: US National Science Foundation, US Department of Defense‏
בדוק
High conductivity and low activation energy in p-type AlGaN‏
S Rathkanthiwar, P Bagheri, D Khachariya, S Mita, C Quiñones-García, ...‏
Applied Physics Letters 122 (9), 092103, 2023‏
הרשאות: US National Science Foundation, US Department of Defense‏
בדוק
Weak localization in compositionally graded AlxGa1-xN‏
A Shafe, A Al-Tawhid, P Bagheri, P Reddy, S Mita, B Moody, R Collazo, ...‏
Bulletin of the American Physical Society, 2021‏
הרשאות: US National Science Foundation, US Department of Energy‏
בדוק
Performance and reliability of state-of-the-art commercial UVC light emitting diodes‏
J Loveless, R Kirste, B Moody, P Reddy, S Rathkanthiwar, J Almeter, ...‏
Solid-State Electronics 209, 108775, 2023‏
הרשאות: US National Science Foundation, US Department of Defense‏
המידע על הפרסום ועל הגורמים המממנים נקבע באופן אוטומטי על ידי תוכנת מחשב