מאמרים עם הרשאות לגישה ציבורית - Dolf Timmermanלמידע נוסף
לא זמין באתר כלשהו: 1
Reply to'Absence of redshift in the direct bandgap of silicon nanocrystals with reduced size'
W de Boer, D Timmerman, I Yassievich, A Capretti, T Gregorkiewicz
Nature Nanotechnology 12 (10), 932-933, 2017
הרשאות: US Department of Energy, National Natural Science Foundation of China …
זמינים באתר כלשהו: 10
Repairing nanoparticle surface defects
E Marino, TE Kodger, RW Crisp, D Timmerman, KE MacArthur, M Heggen, ...
Angewandte Chemie 129 (44), 13983-13987, 2017
הרשאות: Netherlands Organisation for Scientific Research
Utilization of native oxygen in Eu (RE)-doped GaN for enabling device compatibility in optoelectronic applications
B Mitchell, D Timmerman, J Poplawsky, W Zhu, D Lee, R Wakamatsu, ...
Scientific reports 6 (1), 18808, 2016
הרשאות: US National Science Foundation, US Department of Energy
Hot-carrier-mediated impact excitation of Er3+ ions in SiO2 sensitized by Si Nanocrystals
A Lesage, D Timmerman, DM Lebrun, Y Fujiwara, T Gregorkiewicz
Applied Physics Letters 113 (3), 2018
הרשאות: Netherlands Organisation for Scientific Research
Electronic coupling of highly ordered perovskite nanocrystals in supercrystals
Y Tang, D Poonia, M Van Der Laan, D Timmerman, S Kinge, ...
ACS Applied Energy Materials 5 (5), 5415-5422, 2022
הרשאות: Netherlands Organisation for Scientific Research
Room temperature synthesis and characterization of novel lead-free double perovskite nanocrystals with a stable and broadband emission
Y Tang, L Gomez, M Van Der Laan, D Timmerman, V Sebastian, ...
Journal of Materials Chemistry C 9 (1), 158-163, 2021
הרשאות: Netherlands Organisation for Scientific Research
Direct visualization and determination of the multiple exciton generation rate
D Timmerman, E Matsubara, L Gomez, M Ashida, T Gregorkiewicz, ...
ACS omega 5 (34), 21506-21512, 2020
הרשאות: Netherlands Organisation for Scientific Research
Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology
B Mitchell, D Timmerman, W Zhu, JY Lin, HX Jiang, J Poplawsky, R Ishii, ...
Journal of Applied Physics 127 (1), 2020
הרשאות: US Department of Energy, US Department of Defense
Modeling defect mediated color-tunability in LEDs with Eu-doped GaN-based active layers
HJ Austin, B Mitchell, D Timmerman, J Tatebayashi, S Ichikawa, ...
Journal of Applied Physics 131 (4), 2022
הרשאות: US National Science Foundation
Strong crystal field splitting and polarization dependence observed in the emission from Eu3+ ions doped into GaN
S Copelman, H Austin, D Timmerman, JD Poplawsky, M Waite, ...
Light-Emitting Devices, Materials, and Applications XXIV 11302, 228-241, 2020
הרשאות: US National Science Foundation, US Department of Energy
An efficiently excited Eu3+ luminescent site formed in Eu, O-codoped GaN
T Iwaya, S Ichikawa, V Dierolf, B Mitchell, H Austin, D Timmerman, ...
AIP Advances 14 (2), 2024
הרשאות: US National Science Foundation
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