עקוב אחר
Omor Shoron
Omor Shoron
Software Reaserch Engineer (Compact Device Modeling), Intel Corporation
כתובת אימייל מאומתת בדומיין intel.com - דף הבית
כותרת
צוטט על ידי
צוטט על ידי
שנה
Density-dependent electron transport and precise modeling of GaN high electron mobility transistors‏
S Bajaj, OF Shoron, PS Park, S Krishnamoorthy, F Akyol, TH Hung, ...‏
Applied Physics Letters 107 (15), 2015‏
962015
Modulation of over 1014 cm− 2 electrons in SrTiO3/GdTiO3 heterostructures‏
M Boucherit, O Shoron, CA Jackson, TA Cain, MLC Buffon, C Polchinski, ...‏
Applied Physics Letters 104 (18), 2014‏
602014
Two-dimensional Dirac fermions in thin films of ‏
L Galletti, T Schumann, OF Shoron, M Goyal, DA Kealhofer, H Kim, ...‏
Physical Review B 97 (11), 115132, 2018‏
522018
BaTiO3/SrTiO3 heterostructures for ferroelectric field effect transistors‏
OF Shoron, S Raghavan, CR Freeze, S Stemmer‏
Applied Physics Letters 110 (23), 2017‏
442017
Extreme charge density SrTiO3/GdTiO3 heterostructure field effect transistors‏
M Boucherit, OF Shoron, TA Cain, CA Jackson, S Stemmer, S Rajan‏
Applied Physics Letters 102 (24), 2013‏
442013
Probing the Metal-Insulator Transition in by Electrostatic Doping‏
S Raghavan, JY Zhang, OF Shoron, S Stemmer‏
Physical Review Letters 117 (3), 037602, 2016‏
422016
Topological materials for functional optoelectronic devices‏
H Chorsi, B Cheng, B Zhao, J Toudert, V Asadchy, OF Shoron, S Fan, ...‏
Advanced Functional Materials 32 (19), 2110655, 2022‏
362022
Electric field effect near the metal-insulator transition of a two-dimensional electron system in SrTiO3‏
K Ahadi, OF Shoron, PB Marshall, E Mikheev, S Stemmer‏
Applied Physics Letters 110 (6), 2017‏
302017
In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03 A/mm, IOFF=1.13 µA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V‏
S Arulkumaran, GI Ng, CM Manojkumar, K Ranjan, KL Teo, OF Shoron, ...‏
2014 IEEE International Electron Devices Meeting, 25.6. 1-25.6. 4, 2014‏
242014
Electron velocity of 6× 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors‏
S Arulkumaran, GI Ng, M Kumar, K Ranjan, KL Teo, OF Shoron, S Rajan, ...‏
Applied Physics Letters 106 (5), 2015‏
222015
Field-effect transistors with the three-dimensional Dirac semimetal cadmium arsenide‏
OF Shoron, T Schumann, M Goyal, DA Kealhofer, S Stemmer‏
Applied Physics Letters 115 (6), 2019‏
192019
Prospects of terahertz transistors with the topological semimetal cadmium arsenide‏
OF Shoron, M Goyal, B Guo, DA Kealhofer, T Schumann, S Stemmer‏
Advanced Electronic Materials 6 (10), 2000676, 2020‏
182020
Nanoscale etching of perovskite oxides for field effect transistor applications‏
J Cheng, H Yang, C Wang, N Combs, C Freeze, O Shoron, W Wu, ...‏
Journal of Vacuum Science & Technology B 38 (1), 2020‏
182020
High-Current Perovskite Oxide BaTiO3/BaSnO3 Heterostructure Field Effect Transistors‏
J Cheng, C Wang, C Freeze, O Shoron, N Combs, H Yang, NK Kalarickal, ...‏
IEEE Electron Device Letters 41 (4), 621-624, 2020‏
162020
Electronic transport of titanate heterostructures and their potential as channels on (001) Si‏
L Kornblum, EN Jin, O Shoron, M Boucherit, S Rajan, CH Ahn, FJ Walker‏
Journal of Applied Physics 118 (10), 2015‏
152015
Detecting topological phase transitions in cadmium arsenide films via the transverse magnetoresistance‏
OF Shoron, DA Kealhofer, M Goyal, T Schumann, AA Burkov, S Stemmer‏
Applied Physics Letters 119 (17), 2021‏
82021
A simple physically based model of temperature effect on drain current for nanoscale TFET‏
OF Shoron, SA Siddiqui, A Zubair, QDM Khosru‏
2010 IEEE International Conference of Electron Devices and Solid-State …, 2010‏
52010
Impact of bandgap and effective mass on the transport characteristics of tunneling FET‏
A Zubair, SA Siddiqui, OF Shoron, QDM Khosru‏
2010 IEEE Nanotechnology Materials and Devices Conference, 47-51, 2010‏
42010
Modulation of over 1014cm−2electrons at the SrTiO3/GdTiO3 heterojunction‏
O Shoron, M Boucherit, CA Jackson, TA Cain, MLC Buffon, C Polchinski, ...‏
72nd Device Research Conference, 13-14, 2014‏
32014
Topological semimetals for electronic devices‏
A Rashidi, OF Shoron, M Goyal, DA Kealhofer, S Stemmer‏
2021 IEEE International Electron Devices Meeting (IEDM), 38.4. 1-38.4. 4, 2021‏
22021
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מאמרים 1–20