מאמרים עם הרשאות לגישה ציבורית - Michael Moseleyלמידע נוסף
זמינים באתר כלשהו: 29
Vertical GaN power diodes with a bilayer edge termination
JR Dickerson, AA Allerman, BN Bryant, AJ Fischer, MP King, MW Moseley, ...
IEEE Transactions on Electron Devices 63 (1), 419-425, 2015
הרשאות: US Department of Energy
Interband tunneling for hole injection in III-nitride ultraviolet emitters
Y Zhang, S Krishnamoorthy, JM Johnson, F Akyol, A Allerman, ...
Applied Physics Letters 106 (14), 2015
הרשאות: US Department of Energy
High voltage and high current density vertical GaN power diodes
AM Armstrong, AA Allerman, AJ Fischer, MP King, MS Van Heukelom, ...
Electronics Letters 52 (13), 1170-1171, 2016
הרשאות: US Department of Energy
Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency
Y Zhang, Z Jamal-Eddine, F Akyol, S Bajaj, JM Johnson, G Calderon, ...
Applied Physics Letters 112 (7), 2018
הרשאות: US National Science Foundation, US Department of Energy, US Department of …
Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions
Y Zhang, S Krishnamoorthy, F Akyol, AA Allerman, MW Moseley, ...
Applied Physics Letters 109 (12), 2016
הרשאות: US National Science Foundation, US Department of Energy
Tunnel-injected sub-260 nm ultraviolet light emitting diodes
Y Zhang, S Krishnamoorthy, F Akyol, S Bajaj, AA Allerman, MW Moseley, ...
Applied Physics Letters 110 (20), 2017
הרשאות: US National Science Foundation, US Department of Energy
Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs
Y Zhang, S Krishnamoorthy, F Akyol, JM Johnson, AA Allerman, ...
Applied Physics Letters 111 (5), 2017
הרשאות: US National Science Foundation, US Department of Energy
Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes
MW Moseley, AA Allerman, MH Crawford, JJ Wierer, ML Smith, ...
Journal of Applied Physics 117 (9), 2015
הרשאות: US Department of Energy
Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes
Y Zhang, S Krishnamoorthy, F Akyol, AA Allerman, MW Moseley, ...
Applied Physics Letters 109 (19), 2016
הרשאות: US National Science Foundation, US Department of Energy
Enhanced light extraction in tunnel junction-enabled top emitting UV LEDs
Y Zhang, AA Allerman, S Krishnamoorthy, F Akyol, MW Moseley, ...
Applied Physics Express 9 (5), 052102, 2016
הרשאות: US National Science Foundation, US Department of Energy
Phase degradation in BxGa1− xN films grown at low temperature by metalorganic vapor phase epitaxy
BP Gunning, MW Moseley, DD Koleske, AA Allerman, SR Lee
Journal of Crystal Growth 464, 190-196, 2017
הרשאות: US Department of Energy
Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0. 7Ga0. 3N
AM Armstrong, MW Moseley, AA Allerman, MH Crawford, JJ Wierer
Journal of Applied Physics 117 (18), 2015
הרשאות: US Department of Energy
Al0.3Ga0.7N PN diode with breakdown voltage >1600 V
AA Allerman, AM Armstrong, AJ Fischer, JR Dickerson, MH Crawford, ...
Electronics Letters 52 (15), 1319-1321, 2016
הרשאות: US Department of Energy
Performance and breakdown characteristics of irradiated vertical power GaN pin diodes
MP King, AM Armstrong, JR Dickerson, G Vizkelethy, RM Fleming, ...
IEEE Transactions on Nuclear Science 62 (6), 2912-2918, 2015
הרשאות: US Department of Energy
Optical strong coupling between near-infrared metamaterials and intersubband transitions in III-nitride heterostructures
A Benz, S Campione, MW Moseley, JJ Wierer Jr, AA Allerman, JR Wendt, ...
ACS Photonics 1 (10), 906-911, 2014
הרשאות: US Department of Energy
A review of the synthesis of reduced defect density InxGa1− xN for all indium compositions
EA Clinton, E Vadiee, CAM Fabien, MW Moseley, BP Gunning, ...
Solid-State Electronics 136, 3-11, 2017
הרשאות: US National Science Foundation, US Department of Energy
Defect‐enabled electrical current leakage in ultraviolet light‐emitting diodes
MW Moseley, AA Allerman, MH Crawford, JJ Wierer Jr, ML Smith, ...
physica status solidi (a) 212 (4), 723-726, 2015
הרשאות: US Department of Energy
Ultra-Wide Bandgap AlGaN Materials for Electronics and Opto-Electronics
A Armstrong, AA Allerman, AJ Fischer, MP King, M Van Heukelom, ...
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2016
הרשאות: US Department of Energy
Ultra-Wide Bandgap Power Electronics: Needs and Opportunities in a Post-SiC Post-GaN World
A Armstrong, AA Allerman, JR Dickerson
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2016
הרשאות: US Department of Energy
Vertical GaN PIN Diodes with 5 kV Avalanche Breakdown.
JJ Wierer, AA Allerman, JR Dickerson, MW Moseley, AJ Fischer, B Bryant, ...
Sandia National Lab.(SNL-NM), Albuquerque, NM (United States), 2015
הרשאות: US Department of Energy
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