| Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge G Agostinelli, A Delabie, P Vitanov, Z Alexieva, HFW Dekkers, S De Wolf, ... Solar energy materials and solar cells 90 (18-19), 3438-3443, 2006 | 622 | 2006 |
| Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates H Mertens, R Ritzenthaler, A Hikavyy, MS Kim, Z Tao, K Wostyn, SA Chew, ... 2016 IEEE symposium on VLSI technology, 1-2, 2016 | 225 | 2016 |
| Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates H Mertens, R Ritzenthaler, A Chasin, T Schram, E Kunnen, A Hikavyy, ... 2016 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2016 | 167 | 2016 |
| Capacitor-less, long-retention (> 400s) DRAM cell paving the way towards low-power and high-density monolithic 3D DRAM A Belmonte, H Oh, N Rassoul, GL Donadio, J Mitard, H Dekkers, ... 2020 IEEE International Electron Devices Meeting (IEDM), 28.2. 1-28.2. 4, 2020 | 134 | 2020 |
| Molecular hydrogen formation in hydrogenated silicon nitride HFW Dekkers, G Beaucarne, M Hiller, H Charifi, A Slaoui Applied Physics Letters 89 (21), 2006 | 108 | 2006 |
| Vertically stacked gate-all-around Si nanowire CMOS transistors with reduced vertical nanowires separation, new work function metal gate solutions, and DC/AC performance … R Ritzenthaler, H Mertens, V Pena, G Santoro, A Chasin, K Kenis, ... 2018 IEEE International Electron Devices Meeting (IEDM), 21.5. 1-21.5. 4, 2018 | 98 | 2018 |
| Metal gate work function tuning by Al incorporation in TiN LPB Lima, HFW Dekkers, JG Lisoni, JA Diniz, S Van Elshocht, S De Gendt Journal of Applied Physics 115 (7), 2014 | 87 | 2014 |
| Optical properties and local bonding configurations of hydrogenated amorphous silicon nitride thin films JJ Mei, H Chen, WZ Shen, HFW Dekkers Journal of applied physics 100 (7), 2006 | 83 | 2006 |
| Origin of visible luminescence in hydrogenated amorphous silicon nitride HL Hao, LK Wu, WZ Shen, HFW Dekkers Applied Physics Letters 91 (20), 2007 | 82 | 2007 |
| Carrier trap passivation in multicrystalline Si solar cells by hydrogen from SiNx: H layers HFW Dekkers, L Carnel, G Beaucarne Applied physics letters 89 (1), 2006 | 80 | 2006 |
| Silicon surface texturing by reactive ion etching HFW Dekkers, F Duerinckx, J Szlufcik, J Nijs Opto-electronics review 8, 311-316, 2000 | 73 | 2000 |
| Tailoring IGZO-TFT architecture for capacitorless DRAM, demonstrating > 103s retention, >1011 cycles endurance and Lg scalability down to 14nm A Belmonte, H Oh, S Subhechha, N Rassoul, H Hody, H Dekkers, ... 2021 IEEE International Electron Devices Meeting (IEDM), 10.6. 1-10.6. 4, 2021 | 60 | 2021 |
| Implementation of an industry compliant, 5× 50μm, via-middle TSV technology on 300mm wafers A Redolfi, D Velenis, S Thangaraju, P Nolmans, P Jaenen, M Kostermans, ... 2011 IEEE 61st Electronic Components and Technology Conference (ECTC), 1384-1388, 2011 | 60 | 2011 |
| Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS A Veloso, G Hellings, MJ Cho, E Simoen, K Devriendt, V Paraschiv, ... 2015 Symposium on VLSI Technology (VLSI Technology), T138-T139, 2015 | 58 | 2015 |
| The effect of composition on the bond structure and refractive index of silicon nitride deposited by HWCVD and PECVD V Verlaan, AD Verkerk, WM Arnoldbik, CHM van der Werf, R Bakker, ... Thin Solid Films 517 (12), 3499-3502, 2009 | 58 | 2009 |
| Requirements of PECVD SiNx: H layers for bulk passivation of mc-Si HFW Dekkers, S De Wolf, G Agostinelli, F Duerinckx, G Beaucarne Solar energy materials and solar cells 90 (18-19), 3244-3250, 2006 | 58 | 2006 |
| First demonstration of sub-12 nm Lg gate last IGZO-TFTs with oxygen tunnel architecture for front gate devices S Subhechha, N Rassoul, A Belmonte, R Delhougne, K Banerjee, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 54 | 2021 |
| Influence of defect type on hydrogen passivation efficacy in multicrystalline silicon solar cells MI Bertoni, S Hudelson, BK Newman, DP Fenning, HFW Dekkers, ... Progress in Photovoltaics: Research and Applications 19 (2), 187-191, 2011 | 54 | 2011 |
| Hydrogen diffusion in silicon from plasma-enhanced chemical vapor deposited silicon nitride film at high temperature M Sheoran, DS Kim, A Rohatgi, HFW Dekkers, G Beaucarne, M Young, ... Applied Physics Letters 92 (17), 2008 | 54 | 2008 |
| High-efficiency low-cost integral screen-printing multicrystalline silicon solar cells J Szlufcik, F Duerinckx, J Horzel, E Van Kerschaver, H Dekkers, S De Wolf, ... Solar energy materials and solar cells 74 (1-4), 155-163, 2002 | 45 | 2002 |