עקוב אחר
Enrique Miranda
Enrique Miranda
Universitat Autonoma de Barcelona
כתובת אימייל מאומתת בדומיין uab.cat
כותרת
צוטט על ידי
צוטט על ידי
שנה
Recommended methods to study resistive switching devices‏
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...‏
Advanced Electronic Materials 5 (1), 1800143, 2019‏
6582019
Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride‏
C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ...‏
Advanced functional materials 27 (10), 1604811, 2017‏
3432017
Impact of Temperature on the Resistive Switching Behavior of Embedded -Based RRAM Devices‏
C Walczyk, D Walczyk, T Schroeder, T Bertaud, M Sowinska, M Lukosius, ...‏
IEEE transactions on electron devices 58 (9), 3124-3131, 2011‏
2972011
Model for the Resistive Switching Effect in MIM Structures Based on the Transmission Properties of Narrow Constrictions‏
EA Miranda, C Walczyk, C Wenger, T Schroeder‏
IEEE Electron Device Letters 31 (6), 609-611, 2010‏
2182010
Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries‏
M Lanza, G Bersuker, M Porti, E Miranda, M Nafría, X Aymerich‏
Applied Physics Letters 101 (19), 2012‏
2102012
Silicon Oxide (SiOx): A Promising Material for Resistance Switching?‏
A Mehonic, AL Shluger, D Gao, I Valov, E Miranda, D Ielmini, A Bricalli, ...‏
Advanced materials 30 (43), 1801187, 2018‏
2082018
Standards for the characterization of endurance in resistive switching devices‏
M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ...‏
ACS nano 15 (11), 17214-17231, 2021‏
1972021
Quantum-size effects in hafnium-oxide resistive switching‏
S Long, X Lian, C Cagli, X Cartoixa, R Rurali, E Miranda, D Jiménez, ...‏
Applied Physics Letters 102 (18), 2013‏
1862013
Analytic model for the surface potential and drain current in negative capacitance field-effect transistors‏
D Jimenez, E Miranda, A Godoy‏
IEEE Transactions on Electron Devices 57 (10), 2405-2409, 2010‏
1682010
Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM‏
S Long, L Perniola, C Cagli, J Buckley, X Lian, E Miranda, F Pan, M Liu, ...‏
Scientific reports 3 (1), 2929, 2013‏
1662013
Electron transport through broken down ultra-thin SiO2 layers in MOS devices‏
E Miranda, J Sune‏
Microelectronics Reliability 44 (1), 1-23, 2004‏
1502004
A model for the set statistics of RRAM inspired in the percolation model of oxide breakdown‏
S Long, X Lian, C Cagli, L Perniola, E Miranda, M Liu, J Suñé‏
IEEE electron device letters 34 (8), 999-1001, 2013‏
1392013
Cycle-to-Cycle Intrinsic RESET Statistics in -Based Unipolar RRAM Devices‏
S Long, X Lian, T Ye, C Cagli, L Perniola, E Miranda, M Liu, J Sune‏
IEEE electron device letters 34 (5), 623-625, 2013‏
1312013
Analytic modeling of leakage current through multiple breakdown paths in SiO/sub 2/films‏
E Miranda, J Suñé‏
2001 IEEE International Reliability Physics Symposium Proceedings. 39th …, 2001‏
1252001
Soft breakdown conduction in ultrathin (3-5 nm) gate dielectrics‏
E Miranda, J Suñé, R Rodríguez, M Nafria, X Aymerich, L Fonseca, ...‏
IEEE Transactions on Electron Devices 47 (1), 82-89, 2000‏
1212000
Hardware implementation of memristor-based artificial neural networks‏
F Aguirre, A Sebastian, M Le Gallo, W Song, T Wang, JJ Yang, W Lu, ...‏
Nature communications 15 (1), 1974, 2024‏
1192024
Variability in resistive memories‏
JB Roldán, E Miranda, D Maldonado, AN Mikhaylov, NV Agudov, ...‏
Advanced Intelligent Systems 5 (6), 2200338, 2023‏
1062023
Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms?‏
J Suñé, G Mura, E Miranda‏
IEEE Electron Device Letters 21 (4), 167-169, 2000‏
972000
Post soft breakdown conduction in SiO/sub 2/gate oxides‏
J Sune, E Miranda‏
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000‏
952000
A function-fit model for the soft breakdown failure mode‏
E Miranda, J Sune, R Rodriguez, M Nafria, X Aymerich‏
IEEE Electron Device Letters 20 (6), 265-267, 1999‏
901999
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מאמרים 1–20