| Interface dynamics and crystal phase switching in GaAs nanowires D Jacobsson, F Panciera, J Tersoff, MC Reuter, S Lehmann, S Hofmann, ... Nature 531 (7594), 317-322, 2016 | 412 | 2016 |
| Atomic step flow on a nanofacet JC Harmand, G Patriarche, F Glas, F Panciera, I Florea, JL Maurice, ... Physical review letters 121 (16), 166101, 2018 | 183 | 2018 |
| Phase selection in self-catalyzed GaAs nanowires F Panciera, Z Baraissov, G Patriarche, VG Dubrovskii, F Glas, L Travers, ... Nano letters 20 (3), 1669-1675, 2020 | 137 | 2020 |
| Synthesis of nanostructures in nanowires using sequential catalyst reactions F Panciera, YC Chou, MC Reuter, D Zakharov, EA Stach, S Hofmann, ... Nature materials 14 (8), 820-825, 2015 | 101 | 2015 |
| Controlling nanowire growth through electric field-induced deformation of the catalyst droplet F Panciera, MM Norton, SB Alam, S Hofmann, K Mølhave, FM Ross Nature communications 7 (1), 12271, 2016 | 67 | 2016 |
| Band-gap landscape engineering in large-scale 2D semiconductor van der Waals heterostructures V Zatko, SMM Dubois, F Godel, C Carrétéro, A Sander, S Collin, ... ACS nano 15 (4), 7279-7289, 2021 | 49 | 2021 |
| Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor F Panciera, K Hoummada, M Gregoire, M Juhel, N Bicais, D Mangelinck Applied Physics Letters 99 (5), 2011 | 45 | 2011 |
| Atom probe tomography for advanced metallization D Mangelinck, F Panciera, K Hoummada, M El Kousseifi, C Perrin, ... Microelectronic engineering 120, 19-33, 2014 | 33 | 2014 |
| Selective wet etching of silicon germanium in composite vertical nanowires Z Baraissov, A Pacco, S Koneti, G Bisht, F Panciera, F Holsteyns, ... ACS applied materials & interfaces 11 (40), 36839-36846, 2019 | 31 | 2019 |
| Progress in the understanding of Ni silicide formation for advanced MOS structures D Mangelinck, K Hoummada, F Panciera, M El Kousseifi, I Blum, ... physica status solidi (a) 211 (1), 152-165, 2014 | 31 | 2014 |
| Direct epitaxial growth of θ-Ni2Si by reaction of a thin Ni (10 at.% Pt) film with Si (1 0 0) substrate F Panciera, D Mangelinck, K Hoummada, M Texier, M Bertoglio, ... Scripta Materialia 78, 9-12, 2014 | 30 | 2014 |
| End-of-range defects in germanium and their role in boron deactivation F Panciera, PF Fazzini, M Collet, J Boucher, E Bedel, F Cristiano Applied Physics Letters 97 (1), 2010 | 30 | 2010 |
| Creating new VLS silicon nanowire contact geometries by controlling catalyst migration SB Alam, F Panciera, O Hansen, K Mølhave, FM Ross Nano letters 15 (10), 6535-6541, 2015 | 29 | 2015 |
| Atom probe tomography of SRAM transistors: Specimen preparation methods and analysis F Panciera, K Hoummada, M Gregoire, M Juhel, F Lorut, N Bicais, ... Microelectronic engineering 107, 167-172, 2013 | 29 | 2013 |
| Surface crystallization of liquid Au–Si and its impact on catalysis F Panciera, J Tersoff, AD Gamalski, MC Reuter, D Zakharov, EA Stach, ... Advanced Materials 31 (5), 1806544, 2019 | 23 | 2019 |
| Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy YC Chou, F Panciera, MC Reuter, EA Stach, FM Ross Chemical Communications 52 (33), 5686-5689, 2016 | 21 | 2016 |
| Ni (Pt)-silicide contacts on CMOS devices: Impact of substrate nature and Pt concentration on the phase formation F Panciera, K Hoummada, C Perrin, M El Kousseifi, R Pantel, M Descoins, ... Microelectronic engineering 120, 34-40, 2014 | 21 | 2014 |
| Pt redistribution in N-MOS transistors during Ni salicide process F Panciera, K Hoummada, M Gregoire, M Juhel, D Mangelinck Microelectronic engineering 107, 173-177, 2013 | 20 | 2013 |
| Statistics of nucleation and growth of single monolayers in nanowires: Towards a deterministic regime F Glas, F Panciera, JC Harmand physica status solidi (RRL)–Rapid Research Letters 16 (5), 2100647, 2022 | 19 | 2022 |
| Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold F Panciera, S Baudot, K Hoummada, M Gregoire, M Juhel, D Mangelinck Applied Physics Letters 100 (20), 2012 | 19 | 2012 |
Ross, F. M.MIT確認したメール アドレス: mit.edu