| Large-angle, multifunctional metagratings based on freeform multimode geometries D Sell, J Yang, S Doshay, R Yang, JA Fan Nano letters 17 (6), 3752-3757, 2017 | 609 | 2017 |
| Photonic Potentiation and Electric Habituation in Ultrathin Memristive Synapses Based on Monolayer MoS2 HK He, R Yang, W Zhou, HM Huang, J Xiong, L Gan, TY Zhai, X Guo Small 14 (15), 1800079, 2018 | 287 | 2018 |
| Synaptic suppression triplet‐STDP learning rule realized in second‐order memristors R Yang, HM Huang, QH Hong, XB Yin, ZH Tan, T Shi, YX Zhou, XS Miao, ... Advanced functional materials 28 (5), 1704455, 2018 | 255 | 2018 |
| Synaptic metaplasticity realized in oxide memristive devices. ZH Tan, R Yang, K Terabe, XB Yin, XD Zhang, X Guo Advanced Materials (Deerfield Beach, Fla.) 28 (2), 377-384, 2015 | 247 | 2015 |
| On-demand nanodevice with electrical and neuromorphic multifunction realized by local ion migration R Yang, K Terabe, G Liu, T Tsuruoka, T Hasegawa, JK Gimzewski, ... ACS nano 6 (11), 9515-9521, 2012 | 234 | 2012 |
| Memristive synapses and neurons for bioinspired computing R Yang, HM Huang, X Guo Advanced Electronic Materials 5 (9), 1900287, 2019 | 221 | 2019 |
| Electrically tunable single- and few-layer MoS2 nanoelectromechanical systems with broad dynamic range J Lee, Z Wang, K He, R Yang, J Shan, PXL Feng Science advances 4 (3), eaao6653, 2018 | 190 | 2018 |
| Memristive crossbar arrays for storage and computing applications H Li, S Wang, X Zhang, W Wang, R Yang, Z Sun, W Feng, P Lin, Z Wang, ... Advanced Intelligent Systems 3 (9), 2100017, 2021 | 176 | 2021 |
| Synaptic plasticity and memory functions achieved in a WO3− x-based nanoionics device by using the principle of atomic switch operation R Yang, K Terabe, Y Yao, T Tsuruoka, T Hasegawa, JK Gimzewski, ... Nanotechnology 24 (38), 384003, 2013 | 169 | 2013 |
| Black phosphorus nanoelectromechanical resonators vibrating at very high frequencies Z Wang, H Jia, X Zheng, R Yang, Z Wang, GJ Ye, XH Chen, J Shan, ... Nanoscale 7 (3), 877-884, 2015 | 167 | 2015 |
| Multilayer MoS2 transistors enabled by a facile dry-transfer technique and thermal annealing R Yang, X Zheng, Z Wang, CJ Miller, PXL Feng Journal of Vacuum Science & Technology B 32 (6), 2014 | 164 | 2014 |
| Memristive Synapses with Photoelectric Plasticity Realized in ZnO1–x/AlOy Heterojunction DC Hu, R Yang, L Jiang, X Guo ACS applied materials & interfaces 10 (7), 6463-6470, 2018 | 155 | 2018 |
| Quasi‐Hodgkin–Huxley Neurons with Leaky Integrate‐and‐Fire Functions Physically Realized with Memristive Devices HM Huang, R Yang, ZH Tan, HK He, W Zhou, J Xiong, X Guo Advanced Materials 31 (3), 1803849, 2019 | 140 | 2019 |
| Tuning Optical Signatures of Single- and Few-Layer MoS2 by Blown-Bubble Bulge Straining up to Fracture R Yang, J Lee, S Ghosh, H Tang, RM Sankaran, CA Zorman, PXL Feng Nano letters 17 (8), 4568-4575, 2017 | 124 | 2017 |
| Achieving highly uniform two-dimensional PbI2 flakes for photodetectors via space confined physical vapor deposition Y Wang, L Gan, J Chen, R Yang, T Zhai Science bulletin 62 (24), 1654-1662, 2017 | 123 | 2017 |
| Ternary content-addressable memory with MoS2 transistors for massively parallel data search R Yang, H Li, KKH Smithe, TR Kim, K Okabe, E Pop, JA Fan, HSP Wong Nature Electronics 2 (3), 108-114, 2019 | 116 | 2019 |
| Nanomechanical resonators: toward atomic scale B Xu, P Zhang, J Zhu, Z Liu, A Eichler, XQ Zheng, J Lee, A Dash, S More, ... Acs Nano 16 (10), 15545-15585, 2022 | 108 | 2022 |
| Resolving and tuning mechanical anisotropy in black phosphorus via nanomechanical multimode resonance spectromicroscopy Z Wang, H Jia, XQ Zheng, R Yang, GJ Ye, XH Chen, PXL Feng Nano Letters 16 (9), 5394-5400, 2016 | 101 | 2016 |
| All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature X Cao, X Li, X Gao, X Liu, C Yang, R Yang, P Jin Journal of Physics D: Applied Physics 44 (25), 255104, 2011 | 98 | 2011 |
| Bienenstock, Cooper, and Munro Learning Rules Realized in Second‐order memristors with tunable forgetting rate J Xiong, R Yang, J Shaibo, HM Huang, HK He, W Zhou, X Guo Advanced Functional Materials 29 (9), 1807316, 2019 | 88 | 2019 |
He-Ming HuangHuawei Technology確認したメール アドレス: huawei.com