Performance enhancement of piezoelectric energy harvesters using multilayer and multistep beam configurations R Sriramdas, S Chiplunkar, RM Cuduvally, R Pratap IEEE Sensors Journal 15 (6), 3338-3348, 2015 | 72 | 2015 |
Toward accurate composition analysis of GaN and AlGaN using atom probe tomography R Morris, R Cuduvally, D Melkonyan, C Fleischmann, M Zhao, L Arnoldi, ... Journal of Vacuum Science & Technology B 36 (3), 2018 | 32 | 2018 |
Atom probe of GaN/AlGaN heterostructures: The role of electric field, sample crystallography and laser excitation on quantification RJH Morris, R Cuduvally, D Melkonyan, M Zhao, P van der Heide, ... Ultramicroscopy 206, 112813, 2019 | 18 | 2019 |
Potential sources of compositional inaccuracy in the atom probe tomography of InxGa1-xAs R Cuduvally, RJH Morris, P Ferrari, J Bogdanowicz, C Fleischmann, ... Ultramicroscopy 210, 112918, 2020 | 14 | 2020 |
Field dependent study on the impact of co-evaporated multihits and ion pile-up for the apparent stoichiometric quantification of GaN and AlN RJH Morris, R Cuduvally, JR Lin, M Zhao, W Vandervorst, M Thuvander, ... Ultramicroscopy 241, 113592, 2022 | 11 | 2022 |
Tunneling-triggered bipolar action in junctionless tunnel field-effect transistor S Gundapaneni, A Goswami, O Badami, R Cuduvally, A Konar, M Bajaj, ... Applied Physics Express 7 (12), 124302, 2014 | 8 | 2014 |
The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography B Guerguis, R Cuduvally, RJH Morris, G Arcuri, B Langelier, N Bassim Ultramicroscopy 266, 114034, 2024 | 4 | 2024 |
Post-field ionization of Si clusters in atom probe tomography: A joint theoretical and experimental study R Cuduvally, RJH Morris, G Oosterbos, P Ferrari, C Fleischmann, ... Journal of Applied Physics 132 (7), 2022 | 4 | 2022 |
A Correlative Study of Silicon Carbide Power Devices Using Atom Probe Tomography and Transmission Electron Microscopy R Cuduvally, S Russell, B Guerguis, CM Andrei, T Casagrande, GA Arcuri, ... International Symposium for Testing and Failure Analysis 84741, 500-508, 2023 | 3 | 2023 |
Two-parameter quasi-ballistic transport model for nanoscale transistors JU Lee, R Cuduvally, P Dhakras, P Nguyen, HL Hughes Scientific Reports 9 (1), 525, 2019 | 3 | 2019 |
Evaporation dynamics of boron dopants in silicon JO de Beeck, C Freysoldt, R Cuduvally, J Scheerder, RJH Morris, ... Microscopy and Microanalysis 27 (S1), 418-420, 2021 | 1 | 2021 |
Opportunities and Challenges in APT Metrology for Semiconductor Applications C Fleischmann, R Cuduvally, R Morris, D Melkonyan, JO de Beeck, ... Microscopy and Microanalysis 25 (S2), 312-313, 2019 | 1 | 2019 |
Multi-Length-Scale Dopants Analysis of an Image Sensor via FIB-SIMS and APT B Guerguis, R Cuduvally, A Ost, M Ghorbani, S Rashid, W Machado, ... arXiv preprint arXiv:2501.08980, 2025 | | 2025 |
In Situ Focused Ion Beam Redeposition Surface Coatings for Site-Specific, Near-Surface Characterization by Atom Probe Tomography B Guerguis, R Cuduvally, G Arcuri, B Pourbahari, JR McDermid, ... Microscopy and Microanalysis, ozae126, 2025 | | 2025 |
Improvement of Boron Dopant Quantification Accuracy in Atom Probe Tomography via High Electric Field Analysis B Guerguis, R Cuduvally, RJH Morris, G Arcuri, B Langelier, N Bassim Microscopy and Microanalysis 30 (Supplement_1), ozae044. 036, 2024 | | 2024 |
Post-Ionization of Silicon Clusters in Atom Probe Microscopy: A Joint Theoretical and Experimental Investigation. R Cuduvally, G Oosterbos, R Morris, C Fleischmann, P Ferrari, ... | | 2019 |
Two-Parameter Quasi-Ballistic Transport Model for Nanoscale Transistors R Cuduvally, P Dhakras, P Nguyen, HL Hughes, JU Lee arXiv preprint arXiv:1803.07920, 2018 | | 2018 |
Quantitative compositional analysis of compound semiconductors by atom probe tomography R Cuduvally, R Morris, J Bogdanowicz, D Melkonyan, L Arnoldi, ... | | 2018 |
3D imaging of atom probe tip shapes with atomic force microscopy C Fleischmann, K Paredis, D Melkonyan, J Op de Beeck, J Bogdanowicz, ... | | 2018 |
A critical view on the accuracy of dopant profiling in atom probe tomography: The case of boron in silicon D Melkonyan, C Fleischmann, J Bogdanowicz, R Morris, R Cuduvally, ... | | 2018 |