| Experimental and theoretical approach to spin splitting in modulation-doped As/InP quantum wells for B→0 G Engels, J Lange, T Schäpers, H Lüth Physical Review B 55 (4), R1958, 1997 | 689 | 1997 |
| Effect of the heterointerface on the spin splitting in modulation doped quantum wells for T Schäpers, G Engels, J Lange, T Klocke, M Hollfelder, H Lüth Journal of applied physics 83 (8), 4324-4333, 1998 | 376 | 1998 |
| Hall effect measurements on InAs nanowires C Blömers, T Grap, MI Lepsa, J Moers, S Trellenkamp, D Grützmacher, ... Applied physics letters 101 (15), 2012 | 131 | 2012 |
| Spin-orbit coupling and phase coherence in InAs nanowires S Estévez Hernández, M Akabori, K Sladek, C Volk, S Alagha, ... Physical Review B—Condensed Matter and Materials Physics 82 (23), 235303, 2010 | 124 | 2010 |
| Realization of a vertical topological p–n junction in epitaxial Sb2Te3/Bi2Te3 heterostructures M Eschbach, E Młyńczak, J Kellner, J Kampmeier, M Lanius, E Neumann, ... Nature communications 6 (1), 8816, 2015 | 122 | 2015 |
| Superconductor/semiconductor junctions T Schäpers Springer Science & Business Media, 2001 | 116 | 2001 |
| Selective area growth and stencil lithography for in situ fabricated quantum devices P Schüffelgen, D Rosenbach, C Li, TW Schmitt, M Schleenvoigt, AR Jalil, ... Nature nanotechnology 14 (9), 825-831, 2019 | 114 | 2019 |
| Signatures of interaction-induced helical gaps in nanowire quantum point contacts S Heedt, N Traverso Ziani, F Crépin, W Prost, S Trellenkamp, J Schubert, ... Nature Physics 13 (6), 563-567, 2017 | 103 | 2017 |
| Molecular beam epitaxy growth of GaAs/InAs core–shell nanowires and fabrication of InAs nanotubes T Rieger, M Luysberg, T Schäpers, D Grützmacher, MI Lepsa Nano letters 12 (11), 5559-5564, 2012 | 98 | 2012 |
| Effect of Rashba spin-orbit coupling on magnetotransport in quantum wire structures T Schäpers, J Knobbe, VA Guzenko Physical Review B—Condensed Matter and Materials Physics 69 (23), 235323, 2004 | 98 | 2004 |
| Flux quantization effects in InN nanowires T Richter, C Blömers, H Lüth, R Calarco, M Indlekofer, M Marso, ... Nano letters 8 (9), 2834-2838, 2008 | 94 | 2008 |
| Electronic phase coherence in InAs nanowires C Blömers, MI Lepsa, M Luysberg, D Grutzmacher, H Luth, T Schapers Nano letters 11 (9), 3550-3556, 2011 | 92 | 2011 |
| Interference ferromagnet/semiconductor/ferromagnet spin field-effect transistor T Schäpers, J Nitta, HB Heersche, H Takayanagi Physical Review B 64 (12), 125314, 2001 | 84 | 2001 |
| Effect of Si-doping on InAs nanowire transport and morphology S Wirths, K Weis, A Winden, K Sladek, C Volk, S Alagha, TE Weirich, ... Journal of applied physics 110 (5), 2011 | 82 | 2011 |
| Suppression of weak antilocalization in narrow quantum wires T Schäpers, VA Guzenko, MG Pala, U Zülicke, M Governale, J Knobbe, ... Physical Review B—Condensed Matter and Materials Physics 74 (8), 081301, 2006 | 80 | 2006 |
| Growth, characterization, and transport properties of ternary (Bi1− xSbx) 2Te3 topological insulator layers C Weyrich, M Drögeler, J Kampmeier, M Eschbach, G Mussler, ... Journal of Physics: Condensed Matter 28 (49), 495501, 2016 | 78 | 2016 |
| Self-catalyzed VLS grown InAs nanowires with twinning superlattices T Grap, T Rieger, C Blömers, T Schäpers, D Grützmacher, MI Lepsa Nanotechnology 24 (33), 335601, 2013 | 77 | 2013 |
| Weak antilocalization in a polarization-doped AlxGa1− xN∕ GaN heterostructure with single subband occupation N Thillosen, T Schäpers, N Kaluza, H Hardtdegen, VA Guzenko Applied physics letters 88 (2), 2006 | 73 | 2006 |
| Magnetosubbands of semiconductor quantum wires with Rashba spin-orbit coupling J Knobbe, T Schäpers Physical Review B—Condensed Matter and Materials Physics 71 (3), 035311, 2005 | 70 | 2005 |
| Ballistic transport and exchange interaction in InAs nanowire quantum point contacts S Heedt, W Prost, J Schubert, D Grutzmacher, T Schäpers Nano letters 16 (5), 3116-3123, 2016 | 67 | 2016 |
Detlev GruetzmacherDirector at the Peter Grünberg Institute, Forschungszentrum Jülich確認したメール アドレス: fz-juelich.de
