フォロー
Abhijit Biswas
Abhijit Biswas
Professor & Former Head, Dept. Radio Physics and Electronics, University of Calcutta
確認したメール アドレス: caluniv.ac.in - ホームページ
タイトル
引用先
引用先
Exceptional Point and Toward Mode Selective Optical Isolation
A Laha, S Dey, HK Ganghi, A Biswas, S Ghosh
ACS Photonics, 10.1021/acsphotonics.9b01646, 2020
612020
Characterization of Y2O3 gate dielectric on n-GaAs substrates
PS Das, GK Dalapati, DZ Chi, A Biswas, CK Maiti
Applied Surface Science 256, 2245-2251, 2010
532010
Study of InGaAs-channel MOSFETs for analog/mixed-signal system-on-chip applications
S Tewari, A Biswas, A Mallik
IEEE Electron Device Letters 33 (3), 372-374, 2012
482012
Modeling of threshold voltage and subthreshold slope of nanoscale DG MOSFETs
S Bhattacherjee, A Biswas
Semiconductor science and technology 23 (1), 015010, 2007
432007
A concise review on the recent developments in the internet of things (IoT)-based smart aquaculture practices
A Yadav, MT Noori, A Biswas, B Min
Reviews in fisheries science & aquaculture 31 (1), 103-118, 2023
382023
Non-adiabatic Modal Dynamics around Exceptional Points in an All-Lossy Dual-Mode Optical Waveguide: Towards Chirality Driven Asymmetric Mode-Conversion
A Laha, A Biswas, SN Ghosh
Physical Review Applied 10 (5), 054008, 2018
382018
Impact of Different Barrier Layers and Indium Content of the Channel on the Analog Performance of InGaAs MOSFETs
S Tewari, A Biswas, A Mallik
IEEE Trans. Electron Devices 60 (5), 1584-1589, 2013
372013
Monolithic high performance InGaN/GaN white LEDs with a tunnel junction cascaded yellow and blue light-emitting structures
M Saha, A Biswas, H Karan
Optical Materials, 2018
292018
Performance improvement of flash memory using AlN as charge-trapping Layer
P Chakraborty, SS Mahato, TK Maiti, MK Bera, C Mahata, SK Samanta, ...
Microelectronic Engineering 86 (3), 299-302, 2009
292009
Third-order exceptional point and successive switching among three states in an optical microcavity
A Laha, D Beniwal, S Dey, A Biswas, S Ghosh
Physical Review A 101 (6), 063829, 2020
282020
Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects
B Mukhopadhyay, A Biswas, PK Basu, G Eneman, P Verheyen, E Simoen, ...
Semiconductor Science and Technology 23 (9), 095017, 2008
282008
Next nearest neighbor resonance coupling and exceptional singularities in degenerate optical microcavities
A Laha, A Biswas, SN Ghosh
Journal of the Optical Society of America B 34 (10), 2050-2058, 2017
272017
Impact of aspect ratio of nanoscale hybrid p-Ge/n-Si complementary FinFETs on the logic performance
K Banerjee, S Tewari, A Biswas
Microsystem Technologies, doi.org/10.1007/s00542-017-3633-0, 2017
24*2017
Impact of a Spacer Layer on the Analog Performance of Asymmetric InP/InGaAs n-MOSFETs
S Tewari, A Biswas, A Mallik
IEEE Trans. Electron Devices 63 (6), 2313 – 2320, 2016
232016
Investigation on High-Performance CMOS With p-Ge and n-InGaAs MOSFETs for Logic Applications
S Tewari, A Biswas, A Mallik
IEEE Trans. on Nanotechnology 14 (2), 275-281, 2015
222015
Equivalent circuit models of quantum cascade lasers for SPICE simulation of steady state and dynamic responses
A Biswas, PK Basu
Journal of Optics A: Pure and Applied Optics 9 (1), 26, 2006
212006
2-D Compact Model for Drain Current of Fully Depleted Nanoscale GeOI MOSFETs for Improved Analog Circuit Design
C Mondal, A Biswas
IEEE Trans. Electron Devices 60 (8), 2525-2531, 2013
202013
Minimally asymmetric state conversion around exceptional singularities in a specialty optical microcavity
A Laha, A: Biswas, SN Ghosh
J. of Optics 21, 025201, 2019
192019
Improved performance of InGaN/GaN MQW LEDs with trapezoidal wells and gradually thinned barrier layers towards anode
H Karan, A Biswas, M Saha
Optics Communications 400 (1 October), 89-95, 2017
192017
Temperature dependent model for threshold voltage and subthreshold slope of strained-Si channel MOSFETs with a polysilicon gate
A Biswas, S Bhattacherjee
Microelectronics Reliability 54, 1527-1533, 2014
152014
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