Femtosecond pump–probe nondestructive examination of materials PM Norris, AP Caffrey, RJ Stevens, JM Klopf, JT McLeskey, AN Smith Review of scientific instruments 74 (1), 400-406, 2003 | 223 | 2003 |
Thin film non-noble transition metal thermophysical properties AP Caffrey, PE Hopkins, JM Klopf, PM Norris Microscale thermophysical engineering 9 (4), 365-377, 2005 | 97 | 2005 |
Nanoscale‐Confined Terahertz Polaritons in a van Der Waals Crystal TVAG de Oliveira, T Nörenberg, G Álvarez‐Pérez, L Wehmeier, ... Advanced Materials 33 (2), 2005777, 2021 | 84 | 2021 |
High power operation of the JLab IR FEL driver accelerator S Benson, K Beard, G Biallas, J Boyce, D Bullard, J Coleman, D Douglas, ... 2007 IEEE Particle Accelerator Conference (PAC), 79-81, 2007 | 49 | 2007 |
Influence of interband transitions on electron-phonon coupling measurements in Ni films PE Hopkins, JM Klopf, PM Norris Applied Optics 46 (11), 2076-2083, 2007 | 46 | 2007 |
Sub-diffractional cavity modes of terahertz hyperbolic phonon polaritons in tin oxide FH Feres, RA Mayer, L Wehmeier, FCB Maia, ER Viana, A Malachias, ... Nature communications 12 (1), 1995, 2021 | 41 | 2021 |
Successful user operation of a superconducting radio-frequency photoelectron gun with Mg cathodes J Teichert, A Arnold, G Ciovati, JC Deinert, P Evtushenko, M Justus, ... Physical Review Accelerators and Beams 24 (3), 033401, 2021 | 38 | 2021 |
Time-resolved light-induced insulator-metal transition in niobium dioxide and vanadium dioxide thin films MR Beebe, JM Klopf, Y Wang, S Kittiwatanakul, J Lu, SA Wolf, ... Optical Materials Express 7 (1), 213-223, 2016 | 31 | 2016 |
Nonthermal nature of photoinduced insulator-to-metal transition in R Rana, JM Klopf, J Grenzer, H Schneider, M Helm, A Pashkin Physical Review B 99 (4), 041102, 2019 | 30 | 2019 |
The Jefferson Lab high power THz user facility OC J.M. Klopf, A. Greer, J. Gubeli, G.R. Neil, M. Shinn, T. Siggins, D ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 0 | 30* | |
Controlling the propagation asymmetry of hyperbolic shear polaritons in beta-gallium oxide J Matson, S Wasserroth, X Ni, M Obst, K Diaz-Granados, G Carini, ... Nature communications 14 (1), 5240, 2023 | 28 | 2023 |
Phonon-induced near-field resonances in multiferroic BiFeO3 thin films at infrared and THz wavelengths L Wehmeier, T Nörenberg, TVAG de Oliveira, JM Klopf, SY Yang, ... Applied Physics Letters 116 (7), 2020 | 26 | 2020 |
Distinct Length Scales in the VO {sub 2} Metal–Insulator Transition Revealed by Bi-chromatic Optical Probing L Wang, IB Novikova, JM Klopf, SE Madaras, GP Williams, E Madaras, ... Advanced Optical Materials 2 (JLAB-FEL-14-1794; DOE/OR-23177-2975), 2014 | 26 | 2014 |
A proposed VUV oscillator-based FEL upgrade at Jefferson Lab SV Benson, DR Douglas, P Evtushenko, FE Hannon, ... Journal of Modern Optics 58 (16), 1438-1451, 2011 | 23 | 2011 |
dc high voltage conditioning of photoemission guns at Jefferson Lab FEL C Hernandez‐Garcia, SV Benson, G Biallas, D Bullard, P Evtushenko, ... AIP Conference Proceedings 1149 (1), 1071-1076, 2009 | 23 | 2009 |
Germanium monosulfide as a natural platform for highly anisotropic THz polaritons T Nörenberg, G Álvarez-Pérez, M Obst, L Wehmeier, F Hempel, ... ACS nano 16 (12), 20174-20185, 2022 | 22 | 2022 |
Far-Infrared Near-Field Optical Imaging and Kelvin Probe Force Microscopy of Laser-Crystallized and -Amorphized Phase Change Material Ge3Sb2Te6 J Barnett, L Wehmeier, A Heßler, M Lewin, J Pries, M Wuttig, JM Klopf, ... Nano Letters 21 (21), 9012-9020, 2021 | 22 | 2021 |
PMMA as an x-ray resist for micro-machining application: latent image formation and thickness losses Y Vladimirsky, O Vladimirsky, KJ Morris, GM Calderon, V Saile, JM Klopf Proceedings of the international conference on Micro-and nanofabrication …, 1996 | 21 | 1996 |
Transfer mask for high-aspect-ratio microlithography Y Vladimirsky, O Vladimirsky, V Saile, KJ Morris, JM Klopf Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for …, 1995 | 21 | 1995 |
Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/ at 0.6 THz S Regensburger, A kusum Mukherjee, S Schönhuber, MA Kainz, ... IEEE Transactions on Terahertz Science and Technology 8 (4), 465-471, 2018 | 20 | 2018 |