| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 654 | 2019 |
| Electronic synapses made of layered two-dimensional materials Y Shi, X Liang, B Yuan, V Chen, H Li, F Hui, Z Yu, F Yuan, E Pop, ... Nature Electronics 1 (8), 458-465, 2018 | 615 | 2018 |
| Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks S Chen, MR Mahmoodi, Y Shi, C Mahata, B Yuan, X Liang, C Wen, F Hui, ... Nature Electronics 3 (10), 638-645, 2020 | 362 | 2020 |
| Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ... Advanced functional materials 27 (10), 1604811, 2017 | 338 | 2017 |
| Dopant‐free spiro‐triphenylamine/fluorene as hole‐transporting material for perovskite solar cells with enhanced efficiency and stability YK Wang, ZC Yuan, GZ Shi, YX Li, Q Li, F Hui, BQ Sun, ZQ Jiang, LS Liao Advanced Functional Materials 26 (9), 1375-1381, 2016 | 264 | 2016 |
| Graphene and related materials for resistive random access memories F Hui, E Grustan‐Gutierrez, S Long, Q Liu, AK Ott, AC Ferrari, M Lanza Advanced Electronic Materials 3 (8), 1600195, 2017 | 231 | 2017 |
| A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics F Palumbo, C Wen, S Lombardo, S Pazos, F Aguirre, M Eizenberg, F Hui, ... Advanced Functional Materials 30 (18), 1900657, 2020 | 220 | 2020 |
| A review on principles and applications of scanning thermal microscopy (SThM) Y Zhang, W Zhu, F Hui, M Lanza, T Borca‐Tasciuc, M Muñoz Rojo Advanced functional materials 30 (18), 1900892, 2020 | 190 | 2020 |
| Nanoscale characterization of PM2.5 airborne pollutants reveals high adhesiveness and aggregation capability of soot particles Y Shi, Y Ji, H Sun, F Hui, J Hu, Y Wu, J Fang, H Lin, J Wang, H Duan, ... Scientific reports 5 (1), 11232, 2015 | 147 | 2015 |
| Boron nitride as two dimensional dielectric: Reliability and dielectric breakdown Y Ji, C Pan, M Zhang, S Long, X Lian, F Miao, F Hui, Y Shi, L Larcher, ... Applied Physics Letters 108 (1), 2016 | 127 | 2016 |
| On the use of two dimensional hexagonal boron nitride as dielectric F Hui, C Pan, Y Shi, Y Ji, E Grustan-Gutierrez, M Lanza Microelectronic Engineering 163, 119-133, 2016 | 125 | 2016 |
| Scanning probe microscopy for advanced nanoelectronics F Hui, M Lanza Nature electronics 2 (6), 221-229, 2019 | 117 | 2019 |
| Advanced Data Encryption using 2D Materials C Wen, X Li, T Zanotti, FM Puglisi, Y Shi, F Saiz, A Antidormi, S Roche, ... Advanced Materials 33 (27), 2100185, 2021 | 108 | 2021 |
| A review on the use of graphene as a protective coating against corrosion J Hu, Y Ji, Y Shi, F Hui, H Duan, M Lanza Ann. J. Mater. Sci. Eng 1, 16, 2014 | 90 | 2014 |
| Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching N Xiao, MA Villena, B Yuan, S Chen, B Wang, M Eliáš, Y Shi, F Hui, X Jing, ... Advanced Functional Materials 27 (33), 1700384, 2017 | 87 | 2017 |
| Graphene–boron nitride–graphene cross-point memristors with three stable resistive states K Zhu, X Liang, B Yuan, MA Villena, C Wen, T Wang, S Chen, F Hui, Y Shi, ... ACS applied materials & interfaces 11 (41), 37999-38005, 2019 | 79 | 2019 |
| 2D h-BN based RRAM devices FM Puglisi, L Larcher, C Pan, N Xiao, Y Shi, F Hui, M Lanza 2016 IEEE International Electron Devices Meeting (IEDM), 34.8. 1-34.8. 4, 2016 | 71 | 2016 |
| Inkjet printed circuits with 2D semiconductor inks for high‐performance electronics T Carey, A Arbab, L Anzi, H Bristow, F Hui, S Bohm, G Wyatt‐Moon, ... Advanced Electronic Materials 7 (7), 2100112, 2021 | 70 | 2021 |
| Dielectric Properties of Ultrathin CaF2 Ionic Crystals C Wen, AG Banshchikov, YY Illarionov, W Frammelsberger, T Knobloch, ... Advanced Materials 32 (34), 2002525, 2020 | 66 | 2020 |
| Model for multi-filamentary conduction in graphene/hexagonal-boron-nitride/graphene based resistive switching devices C Pan, E Miranda, MA Villena, N Xiao, X Jing, X Xie, T Wu, F Hui, Y Shi, ... 2D Materials 4 (2), 025099, 2017 | 65 | 2017 |
Mario LanzaIEEE Fellow | Associate Professor at National University of Singapore確認したメール アドレス: kaust.edu.sa