フォロー
Richard Monflier
Richard Monflier
LAAS-CNRS
確認したメール アドレス: laas.fr
タイトル
引用先
引用先
Hyper-doped silicon nanoantennas and metasurfaces for tunable infrared plasmonics
JM Poumirol, C Majorel, N Chery, C Girard, PR Wiecha, N Mallet, ...
ACS photonics 8 (5), 1393-1399, 2021
232021
Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing
N Chery, M Zhang, R Monflier, N Mallet, G Seine, V Paillard, JM Poumirol, ...
Journal of Applied Physics 131 (6), 2022
162022
Structural and electrical characterizations of BiSb topological insulator layers epitaxially integrated on GaAs
D Sadek, R Daubriac, C Durand, R Monflier, Q Gravelier, A Proietti, ...
Crystal Growth & Design 22 (8), 5081-5091, 2022
102022
Investigation of Oxygen penetration during UV Nanosecond Laser Annealing of Silicon at high energy densities
R Monflier, T Tabata, H Rizk, J Roul, K Huet, F Mazzamuto, PA Alba, ...
102021
A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1− xGex and Si layers
R Daubriac, E Scheid, H Rizk, R Monflier, S Joblot, R Beneyton, PA Alba, ...
Beilstein Journal of Nanotechnology 9 (1), 1926-1939, 2018
82018
Benzohexacene guide in accurate determination of field effect carrier mobilities in long acenes
EB Pereira, J Bassaler, H Laval, J Holec, R Monflier, F Mesnilgrente, ...
RSC advances 12 (2), 671-680, 2022
52022
Backside fault localization and defect physical analysis of degraded power HEMT p-GaN transistors stressed in DC and AC switching modes
L Ghizzo, G Guibaud, C De Nardi, F Jamin, V Chazal, D Trémouilles, ...
International Symposium for Testing and Failure Analysis 84741, 491-499, 2023
32023
Degradation Study of InGaAsN pin Solar Cell Under 1-MeV Electron Irradiation
M Levillayer, S Duzellier, I Massiot, A Arnoult, T Nuns, C Inguimbert, ...
IEEE Transactions on Nuclear Science 68 (8), 1694-1700, 2021
32021
Diamond Schottky diodes operating at 473 K
R Monflier, K Isoird, A Cazarré, J Tasselli, A Servel, J Achard, D Eon, ...
EPE Journal 27 (3), 118-124, 2017
32017
Investigation of BVdss instability in trench power MOSFET through DLTS, electrical characterization and TCAD simulations
M Ruggeri, P Calenzo, F Morancho, L Masoero, R Germana, A Nodari, ...
2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023
22023
Magnetic field effects in X-ray damaged NPB and MADN OLEDs
R Monflier, M Thene, L Salvagnac, B Franc, EB Pereira, JF Bobo, I Séguy
IEEE Transactions on Magnetics 55 (2), 1-4, 2018
22018
Large-Scale Epitaxial Integration of Single-Crystalline BiSb Topological Insulator on GaAs (111) A
MA Khaled, L Cancellara, S Fekraoui, R Daubriac, F Bertran, C Bigi, ...
ACS Applied Electronic Materials, 2024
12024
Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework
PL Julliard, A Johnsson, N Zographos, R Demoulin, R Monflier, A Jay, ...
Solid-State Electronics 200, 108521, 2023
12023
Defects Investigation in Nanosecond laser Annealed Crystalline Silicon: Identification and Localization
R Monflier, H Rizk, T Tabata, J Roul, S Boninelli, M Italia, A La Magna, ...
2018 22nd International Conference on Ion Implantation Technology (IIT), 132-135, 2018
12018
Impact of impurities on leakage current induced by High-Energy Density Pulsed Laser Annealing in Si diodes
R Monflier, R Daubriac, M Haned, T Tabata, F Olivier, E Imbernon, M Italia, ...
arXiv preprint arXiv:2501.07168, 2025
2025
Study of the Influence of Thermal Annealing of Ga-Doped ZnO Thin Films on NO2 Sensing at ppb Level
B Paret, R Monflier, P Menini, T Camps, Y Thimont, A Barnabé, ...
Chemosensors 13 (1), 1, 2024
2024
Effect of Metallic Ion Implantation on Dark Current Distributions of Silicon-Based CMOS Image Sensors
JEM Cardona, S Joblot, P Kermagoret, G Ducotey, S Hardillier, G Dupeux, ...
2024 IEEE SENSORS, 1-4, 2024
2024
Localization and Physical Analysis of Defects in Degraded Power HEMT p-GaN Transistors Stressed with DC Voltage Surge and Voltage with Switching Stress
L Ghizzo, G Guibaud, C De Nardi, F Jamin, V Chazal, D Trémouilles, ...
Journal of Failure Analysis and Prevention 24 (5), 2221-2231, 2024
2024
Self-Propagating Reaction Mechanisms in TiB2 Integrated Al/CuO Nanothermites
V Singh, R Monflier, N Mauran, A Estève, C Rossi
2023 MRS Fall Meeting & Exhibit, 2023
2023
Stress relaxation and dopant activation in nsec laser annealed SiGe
F Cristiano, R Monflier, R Daubriac, R Demoulin, E Scheid, L Dagault, ...
2021 20th International Workshop on Junction Technology (IWJT), 1-1, 2021
2021
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