| Room-temperature mid-wavelength infrared InAsSb nanowire photodetector arrays with Al2O3 passivation D Ren, KM Azizur-Rahman, Z Rong, BC Juang, S Somasundaram, ... Nano Letters 19 (5), 2793-2802, 2019 | 81 | 2019 |
| InGaAs-GaAs Nanowire Avalanche Photodiodes Toward Single Photon Detection in Free-Running Mode AC Farrell*, X Meng*, D Ren*, H Kim, P Senanayake, NY Hsieh, Z Rong, ... Nano Letters 19 (1), 582-590, 2018 | 57 | 2018 |
| Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with PN Heterojunctions D Ren, X Meng, Z Rong, M Cao, AC Farrell, S Somasundaram, ... Nano Letters 18 (12), 7901–7908, 2018 | 56 | 2018 |
| Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium H Kim, D Ren, AC Farrell, DL Huffaker Nanotechnology 29 (8), 085601, 2018 | 26 | 2018 |
| Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates D Ren, AC Farrell, BS Williams, DL Huffaker Nanoscale 9 (24), 8220-8228, 2017 | 24 | 2017 |
| Feasibility of achieving high detectivity at short-and mid-wavelength infrared using nanowire-plasmonic photodetectors with pn heterojunctions D Ren, Z Rong, KM Azizur-Rahman, S Somasundaram, M Shahili, ... Nanotechnology 30 (4), 044002, 2018 | 20 | 2018 |
| Feasibility of Tracking Multiple Single-Cell Properties with Impedance Spectroscopy D Ren, CO Chui ACS Sensors 3 (5), 1005-1015, 2018 | 19 | 2018 |
| Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model D Ren, AC Scofield, AC Farrell, Z Rong, MA Haddad, RB Laghumavarapu, ... Nanoscale 10 (16), 7792-7802, 2018 | 17 | 2018 |
| Axial InAs(Sb) inserts in selective-area InAsP nanowires on InP for optoelectronics beyond 2.5 µm D Ren, AC Farrell, DL Huffaker Optical Materials Express 8 (4), 1075-1081, 2018 | 16 | 2018 |
| A three-dimensional insight into correlation between carrier lifetime and surface recombination velocity for nanowires D Ren, Z Rong, S Somasundaram, KM Azizur-Rahman, B Liang, ... Nanotechnology 29 (50), 504003, 2018 | 14 | 2018 |
| Self-assembly of tensile-strained Ge quantum dots on InAlAs (111) A KE Sautter, CF Schuck, TA Garrett, AE Weltner, KD Vallejo, D Ren, ... Journal of Crystal Growth 533, 125468, 2020 | 13 | 2020 |
| Selective-area InAsSb Nanowires on InP for 3–5 μm Mid-wavelength Infrared Optoelectronics D Ren, AC Farrell, DL Huffaker MRS Advances 2 (58-59), 3565-3570, 2017 | 11 | 2017 |
| Lateral carrier transfer for high density InGaAs/GaAs surface quantum dots Q Yuan, J Liu, B Liang, D Ren, Y Wang, Y Guo, S Wang, G Fu, YI Mazur, ... Journal of Luminescence 218, 116870, 2020 | 10 | 2020 |
| Significant suppression of surface leakage in GaSb/AlAsSb heterostructure with Al 2 O 3 passivation A Chen, BC Juang, D Ren, B Liang, D Prout, AF Chatziioannou, ... Japanese Journal of Applied Physics 58, 090907, 2019 | 8 | 2019 |
| Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb BC Juang, B Liang, D Ren, DL Prout, AF Chatziioannou, DL Huffaker Crystals 7 (10), 313, 2017 | 8 | 2017 |
| Feasibility of room-temperature mid-wavelength infrared photodetectors using InAsSb nanostructured photoabsorbers D Ren, Z Rong, C Minh, AC Farrell, X Meng, DL Huffaker Proceedings of SPIE 10531, 105310Y, 2018 | 7 | 2018 |
| High-efficiency Ultrafast Optical-to-Electrical Converters Based on InAs Nanowire-Plasmonic Arrays D REN, Z RONG, H KIM, D TURAN, DL HUFFAKER Optics Letters 44 (19), 4666-4669, 2019 | 6 | 2019 |
| Energy‐Sensitive GaSb/AlAsSb Separate Absorption and Multiplication Avalanche Photodiodes for X‐Ray and Gamma‐Ray Detection BC Juang, A Chen, D Ren, B Liang, DL Prout, AF Chatziioannou, ... Advanced Optical Materials 7 (11), 1900107, 2019 | 5 | 2019 |
| Numerical analysis of nanowire surface recombination using a three-dimensional transient model D Ren, Z Rong, B Liang, DL Huffaker Proceedings of SPIE 10543, 1054306, 2018 | 3 | 2018 |
| Mapping Charge Recombination and the Effect of Point-Defect Insertion in Nanowire Heterojunctions BT Zutter, H Kim, WA Hubbard, D Ren, M Mecklenburg, D Huffaker, ... Physical Review Applied 16 (4), 044030, 2021 | 2 | 2021 |
D.L. Huffaker, Diana Huffaker, Diana L...Associate Vice President for Res, UT Arlington and Adjunct Professor of Electrical Engineering, UCLA確認したメール アドレス: uta.edu