| Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy C Skierbiszewski, H Turski, G Muziol, M Siekacz, M Sawicka, G Cywiński, ... Journal of Physics D: Applied Physics 47 (7), 073001, 2014 | 70 | 2014 |
| Beyond quantum efficiency limitations originating from the piezoelectric polarization in light-emitting devices G Muziol, H Turski, M Siekacz, K Szkudlarek, L Janicki, M Baranowski, ... Acs Photonics 6 (8), 1963-1971, 2019 | 43 | 2019 |
| True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy C Skierbiszewski, G Muziol, K Nowakowski-Szkudlarek, H Turski, ... Applied Physics Express 11 (3), 034103, 2018 | 43 | 2018 |
| Stack of two III-nitride laser diodes interconnected by a tunnel junction M Siekacz, G Muziol, M Hajdel, M Żak, K Nowakowski-Szkudlarek, ... Optics Express 27 (4), 5784-5791, 2019 | 39 | 2019 |
| Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide G Muziol, H Turski, M Siekacz, S Grzanka, P Perlin, C Skierbiszewski Applied Physics Express 9 (9), 092103, 2016 | 39 | 2016 |
| Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy G Muziol, H Turski, M Siekacz, P Wolny, S Grzanka, E Grzanka, P Perlin, ... Applied Physics Express 8 (3), 032103, 2015 | 37 | 2015 |
| Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface H Turski, F Krzyżewski, A Feduniewicz-Żmuda, P Wolny, M Siekacz, ... Applied Surface Science 484, 771-780, 2019 | 34 | 2019 |
| AlGaN-free laser diodes by plasma-assisted molecular beam epitaxy C Skierbiszewski, M Siekacz, H Turski, G Muzioł, M Sawicka, ... Applied physics express 5 (2), 022104, 2012 | 32 | 2012 |
| InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE C Skierbiszewski, M Siekacz, H Turski, G Muzioł, M Sawicka, ... Journal of Vacuum Science & Technology B 30 (2), 2012 | 29 | 2012 |
| Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction K Pieniak, M Chlipala, H Turski, W Trzeciakowski, G Muziol, G Staszczak, ... Optics Express 29 (2), 1824-1837, 2021 | 28 | 2021 |
| Indium incorporation in semipolar (2021) and nonpolar (1010) InGaN grown by plasma assisted molecular beam epitaxy M Sawicka, A Feduniewicz-Żmuda, M Kryśko, H Turski, G Muziol, ... Journal of Crystal Growth 459, 129-134, 2017 | 28 | 2017 |
| True-blue nitride laser diodes grown by plasma-assisted molecular beam epitaxy C Skierbiszewski, M Siekacz, H Turski, G Muziol, M Sawicka, P Wolny, ... Applied Physics Express 5 (11), 112103, 2012 | 28 | 2012 |
| Dependence of InGaN quantum well thickness on the nature of optical transitions in LEDs M Hajdel, M Chlipała, M Siekacz, H Turski, P Wolny, ... Materials 15 (1), 237, 2021 | 24 | 2021 |
| Contactless electroreflectance studies of surface potential barrier for N-and Ga-face epilayers grown by molecular beam epitaxy R Kudrawiec, L Janicki, M Gladysiewicz, J Misiewicz, G Cywinski, ... Applied Physics Letters 103 (5), 2013 | 22 | 2013 |
| Investigation on the origin of luminescence quenching in N-polar (In, Ga) N multiple quantum wells C Cheze, M Siekacz, G Muzioł, H Turski, S Grzanka, M Kryśko, JL Weyher, ... Journal of Vacuum Science & Technology B 31 (3), 2013 | 22 | 2013 |
| III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources G Muziol, M Hajdel, M Siekacz, H Turski, K Pieniak, A Bercha, ... Japanese Journal of Applied Physics 61 (SA), SA0801, 2021 | 21 | 2021 |
| Vertical integration of nitride laser diodes and light emitting diodes by tunnel junctions M Siekacz, G Muziol, H Turski, M Hajdel, M Żak, M Chlipała, M Sawicka, ... Electronics 9 (9), 1481, 2020 | 21 | 2020 |
| MBE fabrication of III-N-based laser diodes and its development to industrial system C Skierbiszewski, M Siekacz, H Turski, G Muziol, M Sawicka, P Perlin, ... Journal of crystal growth 378, 278-282, 2013 | 21 | 2013 |
| Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes J Slawinska, G Muziol, M Siekacz, H Turski, M Hajdel, M Zak, ... Optics Express 30 (15), 27004-27014, 2022 | 20 | 2022 |
| Optical properties of III-nitride laser diodes with wide InGaN quantum wells G Muziol, M Hajdel, M Siekacz, K Szkudlarek, S Stanczyk, H Turski, ... Applied Physics Express 12 (7), 072003, 2019 | 20 | 2019 |
Czeslaw SkierbiszewskiInstitute of High Pressure Physics, Polish Academy of Sciences確認したメール アドレス: unipress.waw.pl