| Thermoelectrics: From history, a window to the future D Beretta, N Neophytou, JM Hodges, MG Kanatzidis, D Narducci, ... Materials Science and Engineering: R: Reports 138, 100501, 2019 | 550 | 2019 |
| Performance projections for ballistic graphene nanoribbon field-effect transistors G Liang, N Neophytou, DE Nikonov, MS Lundstrom IEEE Transactions on Electron Devices 54 (4), 677-682, 2007 | 321 | 2007 |
| Bandstructure effects in silicon nanowire electron transport N Neophytou, A Paul, MS Lundstrom, G Klimeck IEEE Transactions on Electron Devices 55 (6), 1286-1297, 2008 | 219 | 2008 |
| Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si N Neophytou, X Zianni, H Kosina, S Frabboni, B Lorenzi, D Narducci Nanotechnology 24 (20), 205402, 2013 | 173 | 2013 |
| Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation G Liang, N Neophytou, MS Lundstrom, DE Nikonov Journal of Applied Physics 102 (5), 2007 | 157 | 2007 |
| On the Lorenz number of multiband materials M Thesberg, H Kosina, N Neophytou Physical Review B 95 (12), 125206, 2017 | 122 | 2017 |
| Engineering enhanced thermoelectric properties in zigzag graphene nanoribbons H Karamitaheri, N Neophytou, M Pourfath, R Faez, H Kosina Journal of Applied Physics 111 (5), 2012 | 118 | 2012 |
| Atomistic simulations of low-field mobility in Si nanowires: Influence of confinement and orientation N Neophytou, H Kosina Physical Review B—Condensed Matter and Materials Physics 84 (8), 085313, 2011 | 118 | 2011 |
| Ultra-low thermal conductivities in large-area Si-Ge nanomeshes for thermoelectric applications JA Perez-Taborda, M Muñoz Rojo, J Maiz, N Neophytou, ... Scientific reports 6 (1), 32778, 2016 | 115 | 2016 |
| Contact effects in graphene nanoribbon transistors G Liang, N Neophytou, MS Lundstrom, DE Nikonov Nano letters 8 (7), 1819-1824, 2008 | 99 | 2008 |
| Effects of confinement and orientation on the thermoelectric power factor of silicon nanowires N Neophytou, H Kosina Physical Review B—Condensed Matter and Materials Physics 83 (24), 245305, 2011 | 93 | 2011 |
| A tight-binding study of the ballistic injection velocity for ultrathin-body SOI MOSFETs Y Liu, N Neophytou, T Low, G Klimeck, MS Lundstrom IEEE transactions on electron devices 55 (3), 866-871, 2008 | 76 | 2008 |
| Band-structure effects on the performance of III–V ultrathin-body SOI MOSFETs Y Liu, N Neophytou, G Klimeck, MS Lundstrom IEEE transactions on electron devices 55 (5), 1116-1122, 2008 | 75 | 2008 |
| Bandstructure effects in silicon nanowire hole transport N Neophytou, A Paul, G Klimeck IEEE Transactions on Nanotechnology 7 (6), 710-719, 2008 | 67 | 2008 |
| Influence of defects on nanotube transistor performance N Neophytou, D Kienle, E Polizzi, MP Anantram Applied Physics Letters 88 (24), 2006 | 63 | 2006 |
| Optimizing thermoelectric power factor by means of a potential barrier N Neophytou, H Kosina Journal of Applied Physics 114 (4), 2013 | 62 | 2013 |
| Band alignment and scattering considerations for enhancing the thermoelectric power factor of complex materials: The case of Co-based half-Heusler alloys C Kumarasinghe, N Neophytou Physical Review B 99 (19), 195202, 2019 | 59 | 2019 |
| Impact of the scattering physics on the power factor of complex thermoelectric materials P Graziosi, C Kumarasinghe, N Neophytou Journal of Applied Physics 126 (15), 2019 | 58 | 2019 |
| Performance analysis of 60-nm gate-length III–V InGaAs HEMTs: Simulations versus experiments N Neophytou, T Rakshit, MS Lundstrom IEEE Transactions on Electron Devices 56 (7), 1377-1387, 2009 | 58 | 2009 |
| Thermal conductivity of silicon nanomeshes: Effects of porosity and roughness S Wolf, N Neophytou, H Kosina Journal of Applied Physics 115 (20), 2014 | 57 | 2014 |
Mark LundstromProfessor of Electrical and Computer Engineering, Purdue University確認したメール アドレス: purdue.edu
