| A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9% J Yoneda, K Takeda, T Otsuka, T Nakajima, MR Delbecq, G Allison, ... Nature nanotechnology 13 (2), 102-106, 2018 | 958 | 2018 |
| Optical properties of ZnO rods formed by metalorganic chemical vapor deposition BP Zhang, NT Binh, Y Segawa, K Wakatsuki, N Usami Applied Physics Letters 83 (8), 1635-1637, 2003 | 403 | 2003 |
| Island formation during growth of Ge on Si (100): A study using photoluminescence spectroscopy H Sunamura, N Usami, Y Shiraki, S Fukatsu Applied Physics Letters 66 (22), 3024-3026, 1995 | 322 | 1995 |
| Formation of highly aligned ZnO tubes on sapphire (0001) substrates BP Zhang, NT Binh, K Wakatsuki, Y Segawa, Y Yamada, N Usami, ... Applied physics letters 84 (20), 4098-4100, 2004 | 245 | 2004 |
| Growth of structure-controlled polycrystalline silicon ingots for solar cells by casting K Fujiwara, W Pan, N Usami, K Sawada, M Tokairin, Y Nose, A Nomura, ... Acta Materialia 54 (12), 3191-3197, 2006 | 212 | 2006 |
| Exploring the potential of semiconducting BaSi2 for thin-film solar cell applications T Suemasu, N Usami Journal of Physics D: Applied Physics 50 (2), 023001, 2016 | 187 | 2016 |
| Investigation of grain boundaries in BaSi2 epitaxial films on Si (1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique M Baba, K Toh, K Toko, N Saito, N Yoshizawa, K Jiptner, T Sekiguchi, ... Journal of crystal growth 348 (1), 75-79, 2012 | 186 | 2012 |
| Growth of ZnO∕ MgZnO quantum wells on sapphire substrates and observation of the two-dimensional confinement effect BP Zhang, NT Binh, K Wakatsuki, CY Liu, Y Segawa, N Usami Applied Physics Letters 86 (3), 2005 | 174 | 2005 |
| Effects of growth temperature on the characteristics of ZnO epitaxial films deposited by metalorganic chemical vapor deposition BP Zhang, K Wakatsuki, NT Binh, N Usami, Y Segawa Thin Solid Films 449 (1-2), 12-19, 2004 | 169 | 2004 |
| Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties ES Kim, N Usami, Y Shiraki Applied Physics Letters 72 (13), 1617-1619, 1998 | 162 | 1998 |
| Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure A Alguno, N Usami, T Ujihara, K Fujiwara, G Sazaki, K Nakajima, ... Applied Physics Letters 83 (6), 1258-1260, 2003 | 145 | 2003 |
| In situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy G Sazaki, T Matsui, K Tsukamoto, N Usami, T Ujihara, K Fujiwara, ... Journal of Crystal Growth 262 (1-4), 536-542, 2004 | 135 | 2004 |
| Determination of bulk minority-carrier lifetime in BaSi2 earth-abundant absorber films by utilizing a drastic enhancement of carrier lifetime by post-growth annealing KO Hara, N Usami, K Nakamura, R Takabe, M Baba, K Toko, T Suemasu Applied Physics Express 6 (11), 112302, 2013 | 130 | 2013 |
| Directional growth method to obtain high quality polycrystalline silicon from its melt K Fujiwara, W Pan, K Sawada, M Tokairin, N Usami, Y Nose, A Nomura, ... Journal of Crystal Growth 292 (2), 282-285, 2006 | 125 | 2006 |
| Grain growth behaviors of polycrystalline silicon during melt growth processes K Fujiwara, Y Obinata, T Ujihara, N Usami, G Sazaki, K Nakajima Journal of crystal growth 266 (4), 441-448, 2004 | 125 | 2004 |
| Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed I Takahashi, N Usami, K Kutsukake, G Stokkan, K Morishita, K Nakajima Journal of Crystal Growth 312 (7), 897-901, 2010 | 121 | 2010 |
| Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization K Toko, M Kurosawa, N Saitoh, N Yoshizawa, N Usami, M Miyao, ... Applied physics letters 101 (7), 2012 | 115 | 2012 |
| Low-temperature (180° C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization K Toko, R Numata, N Oya, N Fukata, N Usami, T Suemasu Applied physics letters 104 (2), 2014 | 114 | 2014 |
| Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si (111) R Takabe, KO Hara, M Baba, W Du, N Shimada, K Toko, N Usami, ... Journal of applied physics 115 (19), 2014 | 110 | 2014 |
| Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon KO Hara, N Usami, K Toh, M Baba, K Toko, T Suemasu Journal of applied physics 112 (8), 2012 | 105 | 2012 |
Takashi SuemasuUniversity of Tsukuba確認したメール アドレス: u.tsukuba.ac.jp