| AlGaN‐based ultraviolet light‐emitting diodes: challenges and opportunities M Usman, S Malik, M Munsif Luminescence 36 (2), 294-305, 2021 | 39 | 2021 |
| Suppressing the efficiency droop in AlGaN-based UVB LEDs M Usman, S Malik, MA Khan, H Hirayama Nanotechnology 32 (21), 215703, 2021 | 36 | 2021 |
| Quantum efficiency enhancement by employing specially designed AlGaN electron blocking layer M Usman, M Munsif, AR Anwar, H Jamal, S Malik, NU Islam Superlattices and Microstructures 139, 106417, 2020 | 28 | 2020 |
| Polarization-dependent hole generation in 222 nm-band AlGaN-based Far-UVC LED: a way forward to the epi-growers of MBE and MOCVD S Malik, M Usman, MA Khan, H Hirayama Journal of Materials Chemistry C 9 (46), 16545-16557, 2021 | 24 | 2021 |
| Analytical analysis of internal quantum efficiency with polarization fields in GaN-based light-emitting diodes M Usman, AR Anwar, M Munsif, S Malik, NU Islam Superlattices and Microstructures 135, 106271, 2019 | 24 | 2019 |
| Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency M Usman, T Jamil, S Malik, H Jamal Optik 232, 166528, 2021 | 22 | 2021 |
| Suppressing the efficiency droop in the AlGaN-based UVB LED. U Muhammad, S Malik, MA Khan, H Hirayama Nanotechnology, 2021 | 21 | 2021 |
| Improving AlGaN-based ultraviolet-C (UV–C) light-emitting diodes by introducing quaternary-graded AlInGaN final quantum barrier M Usman, S Malik, M Hussain, H Jamal, MA Khan Optical Materials 112, 110745, 2021 | 17 | 2021 |
| The marvelous optical performance of AlGaN-based deep ultraviolet light-emitting diodes with AlInGaN-based last quantum barrier and step electron blocking layer T Jamil, M Usman, S Malik, H Jamal Applied Physics A 127 (5), 397, 2021 | 9 | 2021 |
| Increasing the internal quantum efficiency of green GaN-based light-emitting diodes by employing graded quantum well and electron blocking layer M Usman, AR Anwar, M Munsif, S Malik, NU Islam, T Jameel Optical and Quantum Electronics 52, 1-7, 2020 | 6 | 2020 |
| Hole transport enhancement by thickness-and composition-grading of electron blocking layer M Usman, M Munsif, AR Anwar, S Malik, NU Islam, S Khan Optical Engineering 60 (3), 036101-036101, 2021 | 4 | 2021 |
| Improved Ultraviolet-B Light-Emitting Diodes with Graded All Quaternary Layers in the Active Region M Usman, S Malik ECS Journal of Solid State Science and Technology 11 (7), 076004, 2022 | 3 | 2022 |
| Compositionally graded quaternary electron blocking layer for efficient deep ultraviolet AlGaN-based light-emitting diodes M Usman, S Malik, M Hussain, S Ali, S Saeed, AR Anwar, M Munsif Optical Review 29 (6), 498-503, 2022 | 2 | 2022 |
| Metalorganic Vapor‐Phase Epitaxy of +c/−c GaN Polarity Inverted Bilayer for Transverse Quasi‐Phase‐Matched Wavelength Conversion Device K Ikeda, S Malik, M Uemukai, T Tanikawa, R Katayama physica status solidi (b) 261 (11), 2400161, 2024 | | 2024 |
| Numerical analysis of the compositional graded quaternary barrier AlGaN-based ultraviolet-C light-emitting diode S Malik, M Usman, M Hussain, M Munsif, S Khan, S Rasheed, S Ali Opto-Electronics Review 29 (3), 80-84, 2021 | | 2021 |
| Analytical analysis of piezoelectric field on the optoelectronic characteristics of green GaN-based light-emitting diodes AR Anwar, M Usman, M Munsif, S Malik, NU Islam First iiScience International Conference 2020 11561, 1156102, 2020 | | 2020 |
| Augmenting the internal quantum efficiency of GaN-based green light-emitting diodes by sandwiching active region with p-AlGaN layers M Usman, AR Anwar, M Munsif, S Malik, NU Islam, T Jamil Journal of Modern Optics 67 (9), 837-842, 2020 | | 2020 |
Dr. M. Ajmal Khan (Wazir), PhD (Solar...CPR, RIKEN確認したメール アドレス: riken.jp