| Nanoparticles as antiviral agents against adenoviruses V Lysenko, V Lozovski, M Lokshyn, YV Gomeniuk, A Dorovskih, ... Advances in Natural Sciences: Nanoscience and Nanotechnology 9 (2), 025021, 2018 | 102 | 2018 |
| Far-infrared absorption due to electronic transitions of N–O complexes in Czochralski-grown silicon crystals: Influence of nitrogen and oxygen concentration HC Alt, YV Gomeniuk, F Bittersberger, A Kempf, D Zemke Applied Physics Letters 87 (15), 2005 | 24 | 2005 |
| Local mode frequencies of the nearest-neighbor pair in alloys HC Alt, YV Gomeniuk Physical Review B—Condensed Matter and Materials Physics 70 (16), 161314, 2004 | 24 | 2004 |
| Effect of oxide–semiconductor interface traps on low-temperature operation of MOSFETs VS Lysenko, IP Tyagulski, YV Gomeniuk, IN Osiyuk Microelectronics Reliability 40 (4-5), 735-738, 2000 | 24 | 2000 |
| Charge trapping in ultrathin Gd2O3 high-k dielectric AN Nazarov, YV Gomeniuk, YY Gomeniuk, HDB Gottlob, M Schmidt, ... Microelectronic engineering 84 (9-10), 1968-1971, 2007 | 21 | 2007 |
| Carrier transfer effect on transport in p-i-n structures with Ge quantum dots VS Lysenko, YV Gomeniuk, VV Strelchuk, AS Nikolenko, SV Kondratenko, ... Physical Review B—Condensed Matter and Materials Physics 84 (11), 115425, 2011 | 20 | 2011 |
| Plasma treatment as a versatile tool for tuning of sorption properties of thin nanoporous carbon films OM Slobodian, PN Okholin, PM Lytvyn, SV Malyuta, OY Khyzhun, ... Applied Surface Science 544, 148876, 2021 | 17 | 2021 |
| Methane as a novel doping precursor for deposition of highly conductive ZnO thin films by magnetron sputtering AV Vasin, AV Rusavsky, EG Bortchagovsky, YV Gomeniuk, AS Nikolenko, ... Vacuum 174, 109199, 2020 | 17 | 2020 |
| Low-temperature conductance measurements of surface states in HfO2–Si structures with different gate materials Y Gomeniuk, A Nazarov, Y Vovk, Y Lu, O Buiu, S Hall, JK Efavi, ... Materials science in semiconductor processing 9 (6), 980-984, 2006 | 15 | 2006 |
| Splitting of the local mode frequency of substitutional nitrogen in (Ga, In)(As, N) alloys due to symmetry lowering HC Alt, YV Gomeniuk, G Mussler Semiconductor science and technology 21 (10), 1425, 2006 | 15 | 2006 |
| Method to determine carbon in silicon by infrared absorption spectroscopy HC Alt, Y Gomeniuk, B Wiedemann, H Riemann Journal of The Electrochemical Society 150 (8), G498, 2003 | 15 | 2003 |
| Charge carrier transport, trapping, and recombination in PEDOT: PSS/n-Si solar cells S Kondratenko, V Lysenko, YV Gomeniuk, O Kondratenko, Y Kozyrev, ... ACS Applied Energy Materials 2 (8), 5983-5991, 2019 | 14 | 2019 |
| Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors VS Lysenko, IP Tyagulski, YV Gomeniuk, IN Osiyuk Microelectronics reliability 40 (4-5), 799-802, 2000 | 14 | 2000 |
| Charge states and quantitative infrared spectroscopy of electrically active oxygen centers in gallium arsenide HC Alt, YV Gomeniuk, U Kretzer Journal of applied physics 101 (7), 2007 | 13 | 2007 |
| Thermally stimulated field emission of charge from traps in the transition layer of Si SiO2 structures YV Gomeniuk, RN Litovski, VS Lysenko, IN Osiyuk, IP Tyagulski Applied surface science 55 (2-3), 179-185, 1992 | 13 | 1992 |
| Effect of Ge Nanoislands on Lateral Photoconductivity of Ge-SiOX-Si Structures VS Lysenko, YV Gomeniuk, YN Kozyrev, MY Rubezhanska, VK Skylar, ... Advanced Materials Research 276, 179-186, 2011 | 12 | 2011 |
| Quantitative spectroscopy of substitutional nitrogen in GaAs1− xNx epitaxial layers by local vibrational mode absorption HC Alt, Y Gomeniuk, G Ebbinghaus, A Ramakrishnan, H Riechert Semiconductor science and technology 18 (4), 303, 2003 | 11 | 2003 |
| Analysis of electrically active N–O complexes in nitrogen-doped CZ silicon crystals by FTIR spectroscopy HC Alt, YV Gomeniuk, F Bittersberger, A Kempf, D Zemke Materials science in semiconductor processing 9 (1-3), 114-116, 2006 | 10 | 2006 |
| Highly porous carbon films fabricated by magnetron plasma enhanced chemical vapor deposition: Structure, properties and implementation OM Slobodian, AV Rusavsky, AV Vasin, OY Khyzhun, OI Gudymenko, ... Applied Surface Science 496, 143735, 2019 | 9 | 2019 |
| Current stochasticity of field emission of charge from traps in the transition layer of implanted MIS structures YV Gomeniuk, RN Litovski, VS Lysenko, IN Osiyuk, IP Tyagulski Applied surface science 59 (2), 91-94, 1992 | 9 | 1992 |
A.N.NazarovInstitute of Semiconductor Physics NASU確認したメール アドレス: lab15.kiev.ua
