| Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key V Mootheri, A Leonhardt, D Verreck, I Asselberghs, C Huyghebaert, ... Nanotechnology 32 (13), 135202, 2021 | 24 | 2021 |
| Graphene based Van der Waals contacts on MoS2 field effect transistors V Mootheri, G Arutchelvan, S Banerjee, S Sutar, A Leonhardt, ME Boulon, ... 2D Materials 8 (1), 015003, 2020 | 22 | 2020 |
| Use of the Indirect Photoluminescence Peak as an Optical Probe of Interface Defectivity in MoS2 A Leonhardt, CJL de la Rosa, T Nuytten, L Banszerus, S Sergeant, ... Advanced Materials Interfaces 7 (18), 2000413, 2020 | 15 | 2020 |
| Interface admittance measurement and simulation of dual gated CVD WS2 MOSCAPs: Mapping the DIT (E) profile V Mootheri, X Wu, D Cott, B Groven, M Heyns, I Asselberghs, I Radu, ... Solid-State Electronics 183, 108035, 2021 | 4 | 2021 |
| High-efficiency dual single layer graphene modulator integrated on slot waveguides C Wu, T Reep, S Brems, J Jussot, V Mootheri, J Van Campenhout, ... Optics Express 31 (22), 36872-36882, 2023 | 3 | 2023 |
| Trap Density Assessment on Multilayer WS2 using Power-Dependent Indirect Photoluminescence CHSDG Alessandra Leonhardt, Thomas Nuytten, César Javier Lockhart de la Rosa ... ECS Journal of Solid State Science and Technology, 2020 | 3 | 2020 |
| Vt Fine-Tuning in Multi-Vt Gate-All-Around Nanosheet nFETs Using Rare-Earth Oxide-Based Dipole-First Gate Stack Compatible with CFET Integration H Arimura, H Mertens, J Franco, L Lukose, W Maqsood, S Brus, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 1 | 2024 |
| Methods and systems for forming memory devices and components thereof A Leonhardt, M Surman, P Sippola, RK Ramachandran, C Dezelah, ... US Patent App. 18/319,933, 2023 | 1 | 2023 |
| Large> 0.2 dB/µm Modulation Depth Double-Layer Graphene Electro-Absorption Modulator on Slot waveguide C Wu, Z Wang, J Jussot, S Brems, V Mootheri, C Huyghebaert, ... CLEO: Science and Innovations, SF4K. 4, 2022 | 1 | 2022 |
| (Invited) ALD HfZrO2 Films from Ferroelectric to High-k Applications A Leonhardt, J Cimada, R Ramachandran, M Surman, R John, V Mootheri, ... Electrochemical Society Meeting Abstracts prime2024, 2216-2216, 2024 | | 2024 |
| Low leakage capacitors, and related structures, methods, and systems A Leonhardt, V Sharma, VK Mootheri, L Lukose, A Illiberi, J Innocent, ... US Patent App. 18/624,808, 2024 | | 2024 |
| Tuning the Electronic Characteristics of Monolayer MoS2‐Based Transistors by Ion Irradiation: The Role of the Substrate Z Fekri, P Chava, G Hlawacek, M Ghorbani‐Asl, S Kretschmer, W Awan, ... Advanced Electronic Materials 10 (9), 2400037, 2024 | | 2024 |
| METHOD OF FORMING A LAYER COMPRISING MAGNESIUM, ALUMINUM, AND ZINC, AND RELATED SOLIDS AND SYSTEMS M Thukkaram, A Chauhan, A Illiberi, VK Mootheri, L Lukose, A Leonhardt, ... US Patent App. 18/535,440, 2024 | | 2024 |
| Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements A Minj, V Mootheri, S Banerjee, A Nalin Mehta, J Serron, T Hantschel, ... ACS nano 18 (15), 10653-10666, 2024 | | 2024 |
| Interface Engineering for Performance Enhancement in 2D Field Effect Transistors V Koladi Mootheri | | 2024 |
| Tuning the Electronic Characteristics of Monolayer MoS Z Fekri, P Chava, G Hlawacek, M Ghorbani-Asl, S Kretschmer, W Awan, ... | | 2024 |
| New Materials for Memory Applications by Atomic Layer Deposition A Illiberi, A Leonhardt, M Surman, L Lukose, R Ramachandra, V Mootheri, ... Electrochemical Society Meeting Abstracts 244, 1437-1437, 2023 | | 2023 |
| Contact Interface Characterization of Graphene contacted MoS2 FETs V Mootheri, A Minj, G Arutchelvan, A Leonhardt, I Asselberghs, M Heyns, ... 2021 IEEE International Interconnect Technology Conference (IITC), 1-3, 2021 | | 2021 |
| On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation D Lin, X Wu, V Mootheri, D Cott, B Groven, P Morin, I Asselberghs, I Radu 2021 Device Research Conference (DRC), 1-2, 2021 | | 2021 |
| Contact Interface Characterization of Graphene contacted MoS</sub> 2<//sub> FETs V Mootheri, A Minj, G Arutchelvan, A Leonhardt, I Asselberghs, M Heyns, ... IITC2021: 2021 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC), 2021 | | 2021 |
Alessandra LeonhardtASM確認したメール アドレス: asm.com