フォロー
Zineng Yang
Zineng Yang
確認したメール アドレス: connect.hku.hk
タイトル
引用先
引用先
Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga2O3 Heterojunction by Edge Termination Optimization
H Gong, F Zhou, M Xiao, Z Yang, F Ren, S Gu, H Lu, R Zhang, Y Zhang, ...
IEEE Electron Device Letters, 2024
122024
Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules
F Stella, O Olanrewaju, Z Yang, A Castellazzi, G Pellegrino
Microelectronics Reliability 88, 615-619, 2018
112018
Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates
C Beckmann, Z Yang, J Wieben, T Zweipfennig, J Ehrler, A Kirchbrücher, ...
IEEE Journal of the Electron Devices Society, 2023
72023
Investigation of Temperature Distribution in SiC Power Module Prototype in Transient Conditions
O Olanrewaju, Z Yang, N Evans, A Fayyaz, T Lagier, A Castellazzi
2019 20th International Symposium on Power Electronics (Ee), 1-5, 2019
52019
Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective
M Porter, X Yang, H Gong, B Wang, Z Yang, Y Zhang
Applied Physics Letters 125 (11), 2024
42024
Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact
H Gong, N Sun, T Hu, X Yu, M Porter, Z Yang, F Ren, S Gu, Y Zheng, ...
Applied Physics Letters 124 (23), 2024
42024
MOVPE-grown GaN/AlGaN heterostructures on sapphire with polarization-induced two-dimensional hole gases
C Beckmann, J Wieben, T Zweipfennig, A Kirchbrücher, J Ehrler, ...
Journal of Physics D: Applied Physics 55 (43), 435102, 2022
42022
Reliability of NiO/β-Ga2O3 bipolar heterojunction
H Gong, X Yang, M Porter, Z Yang, B Wang, L Li, L Fu, K Sasaki, H Wang, ...
Applied Physics Letters 126 (1), 2025
2025
Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN
Z Yang, Y Ma, M Porter, H Gong, Z Du, H Wang, Y Luo, L Wang, Y Zhang
IEEE Transactions on Electron Devices, 2024
2024
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