| High Performance Multi-layer MoS2 Transistors with Scandium Contacts S Das, HY Chen, AV Penumatcha, J Appenzeller Nano Letters 13 (1), 100-105, 2013 | 2801 | 2013 |
| Recent advances in two-dimensional materials beyond graphene GR Bhimanapati, Z Lin, V Meunier, Y Jung, J Cha, S Das, D Xiao, Y Son, ... ACS Nano 9 (12), 11509-11539, 2015 | 2728 | 2015 |
| Tunable transport gap in phosphorene S Das, W Zhang, M Demarteau, A Hoffmann, M Dubey, A Roelofs Nano letters 14 (10), 5733-5739, 2014 | 816 | 2014 |
| Contact engineering for 2D materials and devices DS Schulman, AJ Arnold, S Das Chemical Society Reviews 47 (9), 3037-3058, 2018 | 801 | 2018 |
| Beyond graphene: progress in novel two-dimensional materials and van der Waals solids S Das, JA Robinson, M Dubey, H Terrones, M Terrones Annual Review of Materials Research 45 (1), 1-27, 2015 | 742 | 2015 |
| Transistors based on two-dimensional materials for future integrated circuits S Das, A Sebastian, E Pop, CJ McClellan, AD Franklin, T Grasser, ... Nature Electronics 4 (11), 786-799, 2021 | 649 | 2021 |
| WSe2 field effect transistors with enhanced ambipolar characteristics S Das, J Appenzeller Applied physics letters 103 (10), 2013 | 491 | 2013 |
| All two-dimensional, flexible, transparent, and thinnest thin film transistor S Das, R Gulotty, AV Sumant, A Roelofs Nano letters 14 (5), 2861-2866, 2014 | 470 | 2014 |
| Ambipolar Phosphorene Field Effect Transistor S Das, M Demarteau, A Roelofs ACS Nano 8 (11), 11730-11738, 2014 | 461 | 2014 |
| Benchmarking monolayer MoS2 and WS2 field-effect transistors A Sebastian, R Pendurthi, TH Choudhury, JM Redwing, S Das Nature Communications 12 (1), 693, 2021 | 434 | 2021 |
| Where Does the Current Flow in Two-Dimensional Layered Systems? S Das, J Appenzeller Nano Letters 13 (7), 3396–3402, 2013 | 313 | 2013 |
| A roadmap for electronic grade 2D materials N Briggs, S Subramanian, Z Lin, X Li, X Zhang, K Zhang, K Xiao, ... 2D Materials 6 (2), 022001, 2019 | 283 | 2019 |
| Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors AJ Arnold, A Razavieh, JR Nasr, DS Schulman, CM Eichfeld, S Das ACS Nano 11 (3), 3110-3118, 2017 | 279 | 2017 |
| Towards Low Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides S Das, A Prakash, R Salazar, J Appenzeller ACS Nano 8 (2), 1681-89, 2014 | 219 | 2014 |
| Wafer-Scale Epitaxial Growth of Unidirectional WS2 Monolayers on Sapphire M Chubarov, TH Choudhury, DR Hickey, S Bachu, T Zhang, A Sebastian, ... ACS Nano, 2021 | 214 | 2021 |
| Screening and interlayer coupling in multilayer MoS2 S Das, J Appenzeller physica status solidi (RRL)-Rapid Research Letters 7 (4), 268-273, 2013 | 196 | 2013 |
| A low-power biomimetic collision detector based on an in-memory molybdenum disulfide photodetector D Jayachandran, A Oberoi, A Sebastian, TH Choudhury, B Shankar, ... Nature Electronics 3 (10), 646-655, 2020 | 195 | 2020 |
| Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transport F Zhang, Y Lu, DS Schulman, T Zhang, K Fujisawa, Z Lin, Y Lei, AL Elias, ... Science Advances 5 (5), eaav5003, 2019 | 177 | 2019 |
| Origin of the turn-on temperature behavior in WTe 2 YL Wang, LR Thoutam, ZL Xiao, J Hu, S Das, ZQ Mao, J Wei, R Divan, ... Physical Review B 92 (18), 180402, 2015 | 177 | 2015 |
| Monolayer Vanadium‐Doped Tungsten Disulfide: A Room‐Temperature Dilute Magnetic Semiconductor F Zhang, B Zheng, A Sebastian, DH Olson, M Liu, K Fujisawa, YTH Pham, ... Advanced Science 7 (24), 2001174, 2020 | 158 | 2020 |
Joerg AppenzellerProfessor of Electrical and Computer Engineering, Purdue University確認したメール アドレス: purdue.edu
