| Electrical charge state identification and control for the silicon vacancy in 4H-SiC ME Bathen, A Galeckas, J Müting, HM Ayedh, U Grossner, J Coutinho, ... npj Quantum Information 5 (1), 111, 2019 | 81 | 2019 |
| Conversion pathways of primary defects by annealing in proton-irradiated -type -SiC R Karsthof, ME Bathen, A Galeckas, L Vines Physical Review B 102 (18), 184111, 2020 | 61 | 2020 |
| Manipulating Single‐Photon Emission from Point Defects in Diamond and Silicon Carbide ME Bathen, L Vines Advanced Quantum Technologies 4 (7), 2100003, 2021 | 47 | 2021 |
| Spin caloritronics with superconductors: Enhanced thermoelectric effects, generalized Onsager response-matrix, and thermal spin currents J Linder, ME Bathen Physical Review B 93 (22), 224509, 2016 | 47 | 2016 |
| Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment ME Bathen, J Coutinho, HM Ayedh, J Ul Hassan, I Farkas, S Öberg, ... Physical Review B 100 (1), 014103, 2019 | 34 | 2019 |
| Characterization methods for defects and devices in silicon carbide ME Bathen, CTK Lew, J Woerle, C Dorfer, U Grossner, S Castelletto, ... Journal of Applied Physics 131 (14), 2022 | 26 | 2022 |
| Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals VM Reinertsen, PM Weiser, YK Frodason, ME Bathen, L Vines, ... Applied Physics Letters 117 (23), 2020 | 24 | 2020 |
| Spin Seebeck effect and thermoelectric phenomena in superconducting hybrids with magnetic textures or spin-orbit coupling ME Bathen, J Linder Scientific Reports 7 (1), 41409, 2017 | 23 | 2017 |
| Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC ME Bathen, A Galeckas, J Coutinho, L Vines Journal of Applied Physics 127 (8), 2020 | 21 | 2020 |
| Investigation of electrically active defects in SiC power diodes caused by heavy ion irradiation N Für, M Belanche, C Martinella, P Kumar, ME Bathen, U Grossner IEEE Transactions on Nuclear Science 70 (8), 1892-1899, 2023 | 17 | 2023 |
| The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers M Ghezellou, P Kumar, ME Bathen, R Karsthof, EÖ Sveinbjörnsson, ... APL Materials 11 (3), 2023 | 15 | 2023 |
| Strain modulation of Si vacancy emission from SiC micro-and nanoparticles GC Vasquez, ME Bathen, A Galeckas, C Bazioti, KM Johansen, ... Nano letters 20 (12), 8689-8695, 2020 | 15 | 2020 |
| Muon Interaction with Negative- and High-Spin-State Defects: Differentiating Between and Vacancies in - J Woerle, ME Bathen, T Prokscha, A Galeckas, HM Ayedh, L Vines, ... Physical Review Applied 14 (5), 054053, 2020 | 15 | 2020 |
| Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC R Karsthof, M Etzelmüller Bathen, A Kuznetsov, L Vines Journal of Applied Physics 131 (3), 2022 | 14 | 2022 |
| First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC ME Bathen, L Vines, J Coutinho Journal of Physics: Condensed Matter 33 (7), 075502, 2020 | 11 | 2020 |
| Heavy-ion-induced defects in degraded SiC power MOSFETs C Martinella, ME Bathen, A Javanainen, U Grossner Materials Science Forum 1090, 179-184, 2023 | 9 | 2023 |
| Diamond (111) surface reconstruction and epitaxial graphene interface BP Reed, ME Bathen, JWR Ash, CJ Meara, AA Zakharov, JP Goss, ... Physical Review B 105 (20), 205304, 2022 | 9 | 2022 |
| Influence of carbon cap on self-diffusion in silicon carbide ME Bathen, M Linnarsson, M Ghezellou, J Ul Hassan, L Vines Crystals 10 (9), 752, 2020 | 8 | 2020 |
| Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime ME Bathen, R Karsthof, A Galeckas, P Kumar, AY Kuznetsov, U Grossner, ... Materials Science in Semiconductor Processing 176, 108316, 2024 | 7 | 2024 |
| Al-implantation induced damage in 4H-SiC P Kumar, MIM Martins, ME Bathen, T Prokscha, U Grossner Materials Science in Semiconductor Processing 174, 108241, 2024 | 6 | 2024 |