フォロー
Tao Li
タイトル
引用先
引用先
Toward high efficiency at high temperatures: Recent progress and prospects on InGaN-based solar cells
Y Zhao, M Xu, X Huang, J Lebeau, T Li, D Wang, H Fu, K Fu, X Wang, ...
Materials Today Energy 31, 101229, 2023
282023
Vertical β-Ga2O3 metal–insulator–semiconductor diodes with an ultrathin boron nitride interlayer
M Xu, A Biswas, T Li, Z He, S Luo, Z Mei, J Zhou, C Chang, AB Puthirath, ...
Applied Physics Letters 123 (23), 2023
112023
GaN-based threshold switching behaviors at high temperatures enabled by interface engineering for harsh environment memory applications
K Fu, S Luo, H Fu, K Hatch, SR Alugubelli, H Liu, T Li, M Xu, Z Mei, Z He, ...
IEEE Transactions on Electron Devices, 2023
102023
Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications
A Biswas, R Maiti, F Lee, CY Chen, T Li, AB Puthirath, SA Iyengar, C Li, ...
Nanoscale Horizons 8 (5), 641-651, 2023
9*2023
Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments
S Luo, K Fu, Q Xie, M Yuan, G Gao, H Guo, R Xu, N Giles, T Li, Z Mei, ...
Applied Physics Letters 123 (24), 2023
52023
Non‐Linear Optics at Twist Interfaces in h‐BN/SiC Heterostructures
A Biswas, R Xu, GA Alvarez, J Zhang, J Christiansen‐Salameh, ...
Advanced Materials 35 (47), 2304624, 2023
52023
Understanding the Breakdown Behavior of Ultrawide Bandgap BN Power Diodes Using Device Modeling
Z He, K Fu, M Xu, J Zhou, T Li, Y Zhao
physica status solidi (RRL)–Rapid Research Letters, 2023
5*2023
Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric
Z He, X Zhang, TS Pieshkov, AE Yekta, T Terlier, DH Mudiyanselage, ...
Applied Physics Letters 125 (4), 2024
22024
Modulation of dielectric properties of hexagonal/cubic boron nitride composites
M Xu, Z He, A Biswas, S Luo, T Li, C Chang, C Li, B Gao, R Vajtai, P Dai, ...
Applied Physics Letters 124 (19), 2024
22024
Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition
A Biswas, GA Alvarez, T Li, J Christiansen-Salameh, E Jeong, ...
Physical Review Materials 7 (9), 094602, 2023
22023
Top-down fabrication of diamond nanostructures
C Li, T Pieshkov, Z Mei, M Xu, T Li, J Murukeshan, R Vajtai, Y Zhao, ...
Diamond and Related Materials 148, 111535, 2024
2024
GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350° C
S Luo, C Chang, Q Xie, T Li, M Xu, Z He, T Palacios, Y Zhao
2024 Device Research Conference (DRC), 1-2, 2024
2024
Characterizations of two-photon absorption process induced by defects in aluminum nitride using Z-scan method
J Zhou, T Li, X Zhao, X Zhang, J Doumani, M Xu, Z He, S Luo, Z Mei, ...
Semiconductor Science and Technology, 2024
2024
Topological Photonic Cavities on the III-N Platform for the Second Harmonic Generation in the UV-Visible Spectrum
T Li, R Xu, Z Mei, J Zhou, M Xu, S Luo, C Chang, Z He, H Zhu, Y Zhao
2024 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2024
2024
Ultrawide-bandgap boron nitride thin films grown on diamond via pulsed laser deposition
A BISWAS, G A Alvarez, T Li, J Christiansen-Salameh, E Jeong, ...
Bulletin of the American Physical Society, 2024
2024
Topological Photonic Devices in the UV-Visible Spectrum Based on the III-N Wide Bandgap Semiconductor Platform
T Li
Rice University, 2024
2024
Edge States Propagation within h-BN Topological Photonic Structures in UV-Vis Spectrum
T Li, J Zhou, K Fu, M Xu, Z He, Y Zhao
2022 Compound Semiconductor Week (CSW), 1-2, 2022
2022
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