| 200 V enhancement-mode p-GaN HEMTs fabricated on 200 mm GaN-on-SOI with trench isolation for monolithic integration X Li, M Van Hove, M Zhao, K Geens, VP Lempinen, J Sormunen, ... IEEE Electron Device Letters 38 (7), 918-921, 2017 | 150 | 2017 |
| An industry-ready 200 mm p-GaN E-mode GaN-on-Si power technology NE Posthuma, S You, S Stoffels, D Wellekens, H Liang, M Zhao, ... 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 108 | 2018 |
| GaN-on-SOI: Monolithically integrated all-GaN ICs for power conversion X Li, N Amirifar, K Geens, M Zhao, W Guo, H Liang, S You, N Posthuma, ... 2019 IEEE International Electron Devices Meeting (IEDM), 4.4. 1-4.4. 4, 2019 | 90 | 2019 |
| Performance optimization of Au-free lateral AlGaN/GaN Schottky barrier diode with gated edge termination on 200-mm silicon substrate J Hu, S Stoffels, S Lenci, B Bakeroot, B De Jaeger, M Van Hove, N Ronchi, ... IEEE Transactions on Electron Devices 63 (3), 997-1004, 2016 | 85 | 2016 |
| CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance U Peralagu, A Alian, V Putcha, A Khaled, R Rodriguez, ... 2019 IEEE International Electron Devices Meeting (IEDM), 17.2. 1-17.2. 4, 2019 | 76 | 2019 |
| Demonstration of GaN integrated half-bridge with on-chip drivers on 200-mm engineered substrates X Li, K Geens, W Guo, S You, M Zhao, D Fahle, V Odnoblyudov, ... IEEE Electron Device Letters 40 (9), 1499-1502, 2019 | 75 | 2019 |
| Observation of Dynamic VTH of p-GaN Gate HEMTs by Fast Sweeping Characterization X Li, B Bakeroot, Z Wu, N Amirifar, S You, N Posthuma, M Zhao, H Liang, ... IEEE Electron Device Letters, 2020 | 73 | 2020 |
| Suppression of the backgating effect of enhancement-mode p-GaN HEMTs on 200-mm GaN-on-SOI for monolithic integration X Li, M Van Hove, M Zhao, K Geens, W Guo, S You, S Stoffels, ... IEEE electron device letters 39 (7), 999-1002, 2018 | 69 | 2018 |
| The physical mechanism of dispersion caused by AlGaN/GaN buffers on Si and optimization for low dispersion S Stoffels, M Zhao, R Venegas, P Kandaswamy, S You, T Novak, ... 2015 IEEE International Electron Devices Meeting (IEDM), 35.4. 1-35.4. 4, 2015 | 57 | 2015 |
| Determination of the self-compensation ratio of carbon in AlGaN for HEMTs B Rackauskas, MJ Uren, S Stoffels, M Zhao, S Decoutere, M Kuball IEEE Transactions on Electron Devices 65 (5), 1838-1842, 2018 | 48 | 2018 |
| Investigation on carrier transport through AlN nucleation layer from differently doped Si (111) substrates X Li, M Van Hove, M Zhao, B Bakeroot, S You, G Groeseneken, ... IEEE Transactions on Electron Devices 65 (5), 1721-1727, 2018 | 47 | 2018 |
| Gate architecture design for enhancement mode p-GaN gate HEMTs for 200 and 650V applications NE Posthuma, S You, S Stoffels, H Liang, M Zhao, S Decoutere 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 44 | 2018 |
| Toward silicon-based lasers for terahertz sources SA Lynch, DJ Paul, P Townsend, G Matmon, Z Suet, RW Kelsall, Z Ikonic, ... IEEE Journal of Selected Topics in Quantum Electronics 12 (6), 1570-1578, 2006 | 42 | 2006 |
| Time-dependent breakdown mechanisms and reliability improvement in edge terminated AlGaN/GaN Schottky diodes under HTRB tests J Hu, S Stoffels, M Zhao, AN Tallarico, I Rossetto, M Meneghini, X Kang, ... IEEE Electron Device Letters 38 (3), 371-374, 2017 | 41 | 2017 |
| Investigating the current collapse mechanisms of p-GaN gate HEMTs by different passivation dielectrics X Li, N Posthuma, B Bakeroot, H Liang, S You, Z Wu, M Zhao, ... IEEE Transactions on Power Electronics 36 (5), 4927-4930, 2020 | 34 | 2020 |
| Toward accurate composition analysis of GaN and AlGaN using atom probe tomography R Morris, R Cuduvally, D Melkonyan, C Fleischmann, M Zhao, L Arnoldi, ... Journal of Vacuum Science & Technology B 36 (3), 2018 | 32 | 2018 |
| GaN-on-Si mm-wave RF devices integrated in a 200mm CMOS Compatible 3-Level Cu BEOL B Parvais, A Alian, U Peralagu, R Rodriguez, S Yadav, A Khaled, ... 2020 IEEE International Electron Devices Meeting (IEDM), 8.1. 1-8.1. 4, 2020 | 31 | 2020 |
| Impact of thinning and through silicon via proximity on high-k/metal gate first CMOS performance A Mercha, A Redolfi, M Stucchi, N Minas, J Van Olmen, S Thangaraju, ... 2010 Symposium on VLSI Technology, 109-110, 2010 | 27 | 2010 |
| The influence of AlN nucleation layer on RF transmission loss of GaN buffer on high resistivity Si (111) substrate S Chang, M Zhao, V Spampinato, A Franquet, L Chang Semiconductor Science and Technology 35 (3), 035029, 2020 | 26 | 2020 |
| Low field vertical charge transport in the channel and buffer layers of GaN-on-Si high electron mobility transistors F Wach, MJ Uren, B Bakeroot, M Zhao, S Decoutere, M Kuball IEEE Electron Device Letters 41 (12), 1754-1757, 2020 | 25 | 2020 |
Benoit BakerootCMST - imec and part-time professor at CMST, ELIS department, Ghent University確認したメール アドレス: ugent.be