| Oxide bipolar electronics: materials, devices and circuits M Grundmann, F Klüpfel, R Karsthof, P Schlupp, FL Schein, D Splith, ... Journal of Physics D: Applied Physics 49 (21), 213001, 2016 | 104 | 2016 |
| Semi‐transparent NiO/ZnO UV photovoltaic cells R Karsthof, P Räcke, H Von Wenckstern, M Grundmann physica status solidi (a) 213 (1), 30-37, 2016 | 89 | 2016 |
| Interface recombination current in type II heterostructure bipolar diodes M Grundmann, R Karsthof, H von Wenckstern ACS applied materials & interfaces 6 (17), 14785-14789, 2014 | 64 | 2014 |
| Conversion pathways of primary defects by annealing in proton-irradiated -type -SiC R Karsthof, ME Bathen, A Galeckas, L Vines Physical Review B 102 (18), 184111, 2020 | 61 | 2020 |
| Polaronic interacceptor hopping transport in intrinsically doped nickel oxide R Karsthof, M Grundmann, AM Anton, F Kremer Physical Review B 99 (23), 235201, 2019 | 43 | 2019 |
| pn‐Heterojunction Diodes with n‐Type In2O3 H von Wenckstern, D Splith, S Lanzinger, F Schmidt, S Müller, P Schlupp, ... Advanced Electronic Materials 1 (4), 1400026, 2015 | 38 | 2015 |
| Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium R Karsthof, AM Anton, F Kremer, M Grundmann Physical review materials 4 (3), 034601, 2020 | 36 | 2020 |
| Nickel oxide–based heterostructures with large band offsets R Karsthof, H von Wenckstern, J Zúniga-Pérez, C Deparis, M Grundmann physica status solidi (b) 257 (7), 1900639, 2020 | 29 | 2020 |
| Transparent JFETs Based on-NiO/-ZnO Heterojunctions R Karsthof, H von Wenckstern, M Grundmann IEEE Transactions on Electron Devices 62 (12), 3999-4003, 2015 | 29 | 2015 |
| Influence of heat treatments in H2 and Ar on the E1 center in β-Ga2O3 A Langørgen, C Zimmermann, Y Kalmann Frodason, ... Journal of Applied Physics 131 (11), 2022 | 26 | 2022 |
| Identification of LiNi and VNi acceptor levels in doped nickel oxide R Karsthof, H von Wenckstern, VS Olsen, M Grundmann APL Materials 8 (12), 2020 | 17 | 2020 |
| The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers M Ghezellou, P Kumar, ME Bathen, R Karsthof, EÖ Sveinbjörnsson, ... APL Materials 11 (3), 2023 | 15 | 2023 |
| Formation of carbon interstitial-related defect levels by thermal injection of carbon into n-type 4H-SiC R Karsthof, M Etzelmüller Bathen, A Kuznetsov, L Vines Journal of Applied Physics 131 (3), 2022 | 14 | 2022 |
| Semitransparent ZnO-based UV-active solar cells: Analysis of electrical loss mechanisms R Karsthof, H von Wenckstern, M Grundmann Journal of Vacuum Science & Technology B 34 (4), 2016 | 14 | 2016 |
| Several approaches to bipolar oxide diodes with high rectification M Grundmann, FL Schein, R Karsthof, P Schlupp, H Von Wenckstern Advances in Science and Technology 93, 252-259, 2014 | 12 | 2014 |
| On the T2 trap in zinc oxide thin films M Schmidt, M Ellguth, R Karsthof, H v. Wenckstern, R Pickenhain, ... physica status solidi (b) 249 (3), 588-595, 2012 | 12 | 2012 |
| Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime ME Bathen, R Karsthof, A Galeckas, P Kumar, AY Kuznetsov, U Grossner, ... Materials Science in Semiconductor Processing 176, 108316, 2024 | 7 | 2024 |
| Light absorption and emission by defects in doped nickel oxide R Karsthof, YK Frodason, A Galeckas, PM Weiser, V Zviagin, ... Advanced Photonics Research 3 (11), 2200138, 2022 | 5 | 2022 |
| Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide ME Bathen, A Galeckas, R Karsthof, A Delteil, V Sallet, AY Kuznetsov, ... Physical Review B 104 (4), 045120, 2021 | 4 | 2021 |
| Semi‐transparent NiO/ZnO UV photovoltaic cells (Phys. Status Solidi A 1∕ 2016) R Karsthof, P Räcke, H von Wenckstern, M Grundmann physica status solidi (a) 213 (1), 224-224, 2016 | 4 | 2016 |
Marius GrundmannUniversität Leipzig確認したメール アドレス: physik.uni-leipzig.de