| 1.37 kV/12 A NiO/β-Ga2O3 Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability H Gong, F Zhou, W Xu, X Yu, Y Xu, Y Yang, F Ren, S Gu, Y Zheng, ... IEEE Transactions on Power Electronics 36 (11), 12213-12217, 2021 | 114 | 2021 |
| An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics F Zhou, H Gong, M Xiao, Y Ma, Z Wang, X Yu, L Li, L Fu, HH Tan, Y Yang, ... Nature Communications 14 (1), 4459, 2023 | 100 | 2023 |
| 1.95-kV Beveled-Mesa NiO/β-Ga2O3 Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness F Zhou, H Gong, W Xu, X Yu, Y Xu, Y Yang, F Ren, S Gu, Y Zheng, ... IEEE Transactions on Power Electronics 37 (2), 1223-1227, 2021 | 96 | 2021 |
| Over 1.8 GW/cm2 beveled-mesa NiO/β-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability F Zhou, HH Gong, ZP Wang, WZ Xu, XX Yu, Y Yang, FF Ren, SL Gu, ... Applied Physics Letters 119 (26), 2021 | 49 | 2021 |
| High-voltage quasi-vertical GaN junction barrier Schottky diode with fast switching characteristics F Zhou, W Xu, F Ren, D Zhou, D Chen, R Zhang, Y Zheng, T Zhu, H Lu IEEE Electron Device Letters 42 (7), 974-977, 2021 | 43 | 2021 |
| 70-μm-Body Ga2O3 Schottky Barrier Diode With 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency H Gong, F Zhou, X Yu, W Xu, FF Ren, S Gu, H Lu, J Ye, R Zhang IEEE Electron Device Letters 43 (5), 773-776, 2022 | 36 | 2022 |
| 1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability F Zhou, W Xu, F Ren, Y Xia, L Wu, T Zhu, D Chen, R Zhang, Y Zheng, ... IEEE Transactions on Power Electronics 37 (1), 26-30, 2021 | 32 | 2021 |
| Demonstration of avalanche and surge current robustness in GaN junction barrier Schottky diode with 600-V/10-A switching capability F Zhou, W Xu, F Ren, D Zhou, D Chen, R Zhang, Y Zheng, T Zhu, H Lu IEEE Transactions on Power Electronics 36 (11), 12163-12167, 2021 | 24 | 2021 |
| Enhanced Avalanche (2.1 kV, 83 A) in NiO/Ga2O3 Heterojunction by Edge Termination Optimization H Gong, F Zhou, M Xiao, Z Yang, F Ren, S Gu, H Lu, R Zhang, Y Zhang, ... IEEE Electron Device Letters, 2024 | 12 | 2024 |
| High performance quasi-vertical GaN junction barrier Schottky diode with zero reverse recovery and rugged avalanche capability F Zhou, W Xu, F Ren, D Chen, R Zhang, Y Zheng, T Zhu, H Lu 2021 33rd International Symposium on Power Semiconductor Devices and ICs …, 2021 | 10 | 2021 |
| Multi-aperture anode based AlGaN/GaN Schottky barrier diodes with low turn-on voltage and high uniformity Y Lu, F Zhou, W Xu, D Wang, Y Xia, Y Zhu, D Pan, F Ren, D Zhou, J Ye, ... Applied Physics Express 13 (9), 096502, 2020 | 10 | 2020 |
| Demonstration of vertical GaN schottky barrier diode with robust electrothermal ruggedness and fast switching capability by eutectic bonding and laser lift-off techniques Q Wei, F Zhou, W Xu, F Ren, D Zhou, D Chen, R Zhang, Y Zheng, H Lu IEEE Journal of the Electron Devices Society 10, 1003-1008, 2022 | 8 | 2022 |
| 3.0-V-threshold-Voltage p-GaN HEMTs with low-loss reverse conduction capability F Zhou, W Xu, Y Jin, T Zhou, F Ren, D Zhou, Y Xia, L Wu, Y Li, T Zhu, ... 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 6 | 2023 |
| 1000-W resistive energy dissipating capability against inductive transients demonstrated in non-avalanche AlGaN/GaN Schottky diode W Xu, F Zhou, Q Liu, F Ren, D Zhou, D Chen, R Zhang, Y Zheng, H Lu IEEE Electron Device Letters 42 (12), 1743-1746, 2021 | 6 | 2021 |
| Flip-chip AlGaN/GaN schottky barrier diode using buried-ohmic anode structure with robust surge current ruggedness and transient energy sustaining capability F Zhou, W Xu, Y Jin, T Zhou, F Ren, D Zhou, D Chen, R Zhang, Y Zheng, ... IEEE Transactions on Electron Devices 69 (10), 5664-5670, 2022 | 5 | 2022 |
| High- E-Mode GaN HEMTs With Robust Gate-Bias-Dependent Stability Enabled by Mg-Doped p-GaN Engineering Y Jin, F Zhou, W Xu, Z Wang, T Zhou, D Zhou, F Ren, Y Xia, L Wu, Y Li, ... IEEE Transactions on Electron Devices, 2023 | 4 | 2023 |
| Current transport dynamics and stability characteristics of the NiO x based gate structure for normally-off GaN HEMTs Y Du, W Xu, H Gong, J Ye, F Zhou, F Ren, D Zhou, D Chen, R Zhang, ... Journal of Physics D: Applied Physics 55 (47), 474001, 2022 | 4 | 2022 |
| 0.58 mΩ·cm2/523 V GaN Vertical Schottky Barrier Diode with 15.6 kA/cm2 Surge Current Enabled by Laser Lift-Off/Annealing and N-Ion Implantation W Qi, F Zhou, T Ma, W Xu, D Zhou, F Ren, D Chen, R Zhang, Y Zheng, ... IEEE Electron Device Letters, 2024 | 3 | 2024 |
| Irradiation Hardened p-GaN HEMTs Enabling 558 V Single-Event Hardness at 75.7 MeV·cm2/mg and 95% Conversion Efficiency at 300 W/500 kHz F Zhou, C Zou, T Zhou, W Xu, F Ren, D Zhou, Y Wang, D Chen, Y Xia, ... IEEE Electron Device Letters, 2024 | 3 | 2024 |
| Over 10 kA/cm2 inductive current sustaining capability demonstrated in GaN-on-GaN pn junction with high ruggedness Y Bai, W Xu, F Zhou, Y Wang, L Guo, F Ren, D Zhou, D Chen, R Zhang, ... Micro and Nanostructures 170, 207367, 2022 | 3 | 2022 |