フォロー
Seongin Hong
Seongin Hong
Assistant Professor, Department of Physics, Gachon University
確認したメール アドレス: gachon.ac.kr - ホームページ
タイトル
引用先
引用先
Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry
S Hong, N Zagni, S Choo, N Liu, S Baek, A Bala, H Yoo, BH Kang, HJ Kim, ...
Nature communications 12 (1), 3559, 2021
1412021
A highly sensitive chemical gas detecting transistor based on highly crystalline CVD-grown MoSe2 films
J Baek, D Yin, N Liu, I Omkaram, C Jung, H Im, S Hong, SM Kim, YK Hong, ...
Nano Research 10, 1861-1871, 2017
1362017
Sensory Adaptation and Neuromorphic Phototransistors Based on CsPb(Br1–xIx)3 Perovskite and MoS2 Hybrid Structure
S Hong, SH Choi, J Park, H Yoo, JY Oh, E Hwang, DH Yoon, S Kim
ACS nano 14 (8), 9796-9806, 2020
1182020
Neuromorphic active pixel image sensor array for visual memory
S Hong, H Cho, BH Kang, K Park, D Akinwande, HJ Kim, S Kim
ACS nano 15 (9), 15362-15370, 2021
852021
Interstitial Mo‐Assisted Photovoltaic Effect in Multilayer MoSe2 Phototransistors
S Kim, J Maassen, J Lee, SM Kim, G Han, J Kwon, S Hong, J Park, N Liu, ...
Advanced Materials 30 (12), 1705542, 2018
732018
Improving the Stability of High-Performance Multilayer MoS2 Field-Effect Transistors
N Liu, J Baek, SM Kim, S Hong, YK Hong, YS Kim, HS Kim, S Kim, J Park
ACS applied materials & interfaces 9 (49), 42943-42950, 2017
732017
Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors
HW Cho, P Pujar, M Choi, S Kang, S Hong, J Park, S Baek, Y Kim, J Lee, ...
npj 2D Materials and Applications 5 (1), 46, 2021
612021
n‐Type Doping Effect of CVD‐Grown Multilayer MoSe2 Thin Film Transistors by Two‐Step Functionalization
S Hong, H Im, YK Hong, N Liu, S Kim, JH Park
Advanced Electronic Materials 4 (12), 1800308, 2018
322018
Recent progress in high-mobility thin-film transistors based on multilayer 2D materials
YK Hong, N Liu, D Yin, S Hong, DH Kim, S Kim, W Choi, Y Yoon
Journal of Physics D: Applied Physics 50 (16), 164001, 2017
292017
Chemical Doping Effects on CVD‐Grown Multilayer MoSe2 Transistor
H Yoo, S Hong, H Moon, S On, H Ahn, HK Lee, S Kim, YK Hong, JJ Kim
Advanced Electronic Materials 4 (6), 1700639, 2018
282018
Skin-conformable photoplethysmogram sensors for energy-efficient always-on cardiovascular monitoring systems
BH Kang, K Park, M Hambsch, S Hong, HT Kim, DH Choi, JH Lee, S Kim, ...
Nano Energy 92, 106773, 2022
272022
Chemical Doping Effects in Multilayer MoS2 and Its Application in Complementary Inverter
H Yoo, S Hong, S On, H Ahn, HK Lee, YK Hong, S Kim, JJ Kim
ACS applied materials & interfaces 10 (27), 23270-23276, 2018
262018
High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics
YK Hong, G Yoo, J Kwon, S Hong, WG Song, N Liu, I Omkaram, B Yoo, ...
AIP Advances 6 (5), 2016
242016
Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf0.5Zr0.5O2
P Pujar, H Cho, S Gandla, M Naqi, S Hong, S Kim
Advanced Functional Materials 31 (43), 2103748, 2021
232021
Se-Vacancy Healing with Substitutional Oxygen in WSe2 for High-Mobility p-Type Field-Effect Transistors
H Cho, M Sritharan, Y Ju, P Pujar, R Dutta, WS Jang, YM Kim, S Hong, ...
ACS nano 17 (12), 11279-11289, 2023
202023
The doping mechanism and electrical performance of polyethylenimine‐doped MoS2 transistor
S Hong, G Yoo, DH Kim, WG Song, OK Le, YK Hong, K Takahashi, ...
physica status solidi c 14 (3-4), 1600262, 2017
202017
Multifunctional molybdenum disulfide flash memory using a PEDOT: PSS floating gate
S Hong, J Park, JJ Lee, S Lee, K Yun, H Yoo, S Kim
NPG Asia Materials 13 (1), 38, 2021
192021
A Colorimetric Multifunctional Sensing Method for Structural‐Durability‐Health Monitoring Systems
H Im, S Hong, Y Lee, H Lee, S Kim
Advanced Materials, 1807552, 2019
192019
Fabrication of Highly Photosensitive MoS2 Photodetector Films Using Rapid Electrohydrodynamic‐Jet Printing Process
S Hong, S Baek, TTT Can, WS Choi, S Kim
Advanced Electronic Materials 8 (7), 2101063, 2022
172022
Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene‐On‐p‐GaN Mesa Structure
B Pandit, HS Jang, Y Jeong, S An, S Chandramohan, KK Min, SM Won, ...
Advanced Materials Interfaces 10 (12), 2202379, 2023
162023
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