| BSIM-CMG: Standard FinFET compact model for advanced circuit design JP Duarte, S Khandelwal, A Medury, C Hu, P Kushwaha, H Agarwal, ... ESSCIRC Conference 2015-41st European Solid-State Circuits Conference …, 2015 | 106 | 2015 |
| Capacitance Modeling in Dual Field-Plate Power GaN HEMT for Accurate Switching Behavior S Aamir Ahsan, S Ghosh, K Sharma, A Dasgupta, S Khandelwal, ... IEEE Transactions on Electron Devices 63 (2), 2016 | 102* | 2016 |
| Proposal for capacitance matching in negative capacitance field-effect transistors H Agarwal, P Kushwaha, YK Lin, MY Kao, YH Liao, A Dasgupta, ... IEEE Electron Device Letters 40 (3), 463-466, 2019 | 87 | 2019 |
| Compact modeling of temperature effects in FDSOI and FinFET devices down to cryogenic temperatures G Pahwa, P Kushwaha, A Dasgupta, S Salahuddin, C Hu IEEE Transactions on Electron Devices 68 (9), 4223-4230, 2021 | 76 | 2021 |
| Surface-Potential-Based Compact Modeling of Gate Current in AlGaN/GaN HEMTs S Ghosh, A Dasgupta, S Khandelwal, S Agnihotri, YS Chauhan IEEE Transactions on Electron Devices 62 (2), 443-448, 2014 | 76 | 2014 |
| BSIM compact model of quantum confinement in advanced nanosheet FETs A Dasgupta, SS Parihar, P Kushwaha, H Agarwal, MY Kao, S Salahuddin, ... IEEE Transactions on Electron Devices 67 (2), 730-737, 2020 | 56 | 2020 |
| ASM-HEMT: compact model for GaN HEMTs A Dasgupta, S Ghosh, YS Chauhan, S Khandelwal 2015 IEEE International Conference on Electron Devices and Solid-State …, 2015 | 55 | 2015 |
| Design optimization techniques in nanosheet transistor for RF applications P Kushwaha, A Dasgupta, MY Kao, H Agarwal, S Salahuddin, C Hu IEEE Transactions on Electron Devices 67 (10), 4515-4520, 2020 | 49 | 2020 |
| Surface Potential Based Modeling of Thermal Noise for HEMT Circuit Simulation A Dasgupta, S Khandelwal, YS Chauhan IEEE Microwave and Wireless Components Letters 25 (6), 376-378, 2015 | 47 | 2015 |
| Spacer Engineering in Negative Capacitance FinFETs YK Lin, H Agarwal, MY Kao, J Zhou, YH Liao, A Dasgupta, P Kushwaha, ... IEEE Electron Device Letters 40 (6), 1009-1012, 2019 | 46 | 2019 |
| Compact Modeling of Flicker Noise in HEMTs A Dasgupta, S Khandelwal, YS Chauhan IEEE Journal of Electron Devices Society 2 (6), 174-178, 2014 | 42 | 2014 |
| Characterization and Modeling of Flicker Noise in FinFETs at Advanced Technology node P Kushwaha, H Agarwal, YK Lin, A Dasgupta, MY Kao, Y Lu, Y Yue, ... IEEE Electron Device Letters 40 (6), 985-988, 2019 | 40 | 2019 |
| GaN HEMT Modeling for Power and RF Applications using ASM-HEMT S Ghosh, SA Ahsan, A Dasgupta, S Khandelwal, YS Chauhan IEEE International Conference on Emerging Electronics (ICEE, 2016 | 40 | 2016 |
| Compact model for geometry dependent mobility in nanosheet FETs A Dasgupta, SS Parihar, H Agarwal, P Kushwaha, YS Chauhan, C Hu IEEE Electron Device Letters 41 (3), 313-316, 2020 | 31 | 2020 |
| Unified compact model for nanowire transistors including quantum effects and quasi-ballistic transport A Dasgupta, A Agarwal, YS Chauhan IEEE Transactions on Electron Devices 64 (4), 1837-1845, 2017 | 28 | 2017 |
| Compact Modeling of Surface Potential, Charge and Current in Nanoscale Transistors under Quasi-Ballistic Regime A Dasgupta, A Agarwal, S Khandelwal, YS Chauhan IEEE Transactions on Electron Devices 63 (11), 4151-4159, 2016 | 27 | 2016 |
| Optimization of NCFET by Matching Dielectric and Ferroelectric Nonuniformly along the Channel MY Kao, YK Lin, H Agarwal, YH Liao, P Kushwaha, A Dasgupta, ... IEEE Electron Device Letters 40 (5), 822-825, 2019 | 24 | 2019 |
| Effect of access region and field plate on capacitance behavior of GaN HEMT K Sharma, A Dasgupta, S Ghosh, SA Ahsan, S Khandelwal, YS Chauhan 2015 IEEE International Conference on Electron Devices and Solid-State …, 2015 | 24 | 2015 |
| Compact Modeling of Negative-Capacitance FDSOI FETs for Circuit Simulations CK Dabhi, SS Parihar, A Dasgupta, YS Chauhan IEEE Transactions on Electron Devices 67 (7), 2710-2716, 2020 | 23 | 2020 |
| Compact Modeling of Cross-Sectional Scaling in Gate-All-Around FETs: 3-D to 1-D Transition A Dasgupta, P Rastogi, A Agarwal, C Hu, YS Chauhan IEEE Transactions on Electron Devices, 2018 | 23 | 2018 |
Yogesh S. ChauhanFellow IEEE, FNAE, Professor-IIT Kanpur確認したメール アドレス: iitk.ac.in